MARKING 12E Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

marking 54 sot23

Abstract: ZC2812
Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L

SOT23R

Abstract: 12E MARKING ZC2812E wa sot23 SOT23 WA marking 54 sot23 DSA003721
Contextual Info: ZEl SOT23 DUAL SCHOTTKY BARRIER DIODES MUE 3- NOVEWER 1995 1 h f+ 23 32 ZC2tl13E ——— ZC2812E ————— Commo,? Anodl —— — k~ Operating and Storage RATINGS. Temperature Type -. 12E Part Marking r Range Device ——. Series — 1:4E ABSOLUTE MAXIMUM

MV SOT23

Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Contextual Info: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range

MUBW30-12E6K

Abstract: 9V bridge rectifier ic IXYS IGBT MUBW E72873
Contextual Info: MUBW30-12E6K Converter - Brake - Inverter Module CBI 1 SPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 29 A = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V Part name (Marking on product)

MUBW30-12E6K

Abstract: 12e6k E72873 30-12E6K
Contextual Info: MUBW30-12E6K Converter - Brake - Inverter Module CBI 1 SPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 29 A = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V Part name (Marking on product)

BC858BL3

Abstract: BC847BL3 BC848BL3 BC857BL3
Contextual Info: BC857BL3, BC858BL3 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration Package

Contextual Info: BC857BL3, BC858BL3 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration Package

11E-10

Abstract: BC857BL3 BC847BL3 BC848BL3 BC858BL3
Contextual Info: BC857BL3, BC858BL3 PNP Silicon AF Transistors Preliminary data • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration

Contextual Info: BC847BL3, BC848BL3 NPN Silicon AF Transistor • For AF input stage and driver applications • High current gain 3 • Low collector-emitter saturation voltage 1 2 • Complementary types: BC857BL3, BC858BL3 PNP Type Marking Pin Configuration Package BC847BL3

Contextual Info: BC857BL3, BC858BL3 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration Package

E72873

Abstract: MWI50-12E6K
Contextual Info: MWI 50-12E6K IGBT Module Sixpack IC25 = 51 A VCES = 1200 V VCE sat typ. = 2.4 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 50-12E6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.

12e6k

Abstract: 30-12E6K E72873
Contextual Info: MWI 30-12E6K IGBT Module Sixpack IC25 = 29 A VCES = 1200 V VCE sat typ. = 2.5 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 30-12E6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.

Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration

12e6k

Abstract: E72873 MWI50-12E6K
Contextual Info: MWI 50-12E6K IGBT Module Sixpack IC25 = 51 A = 1200 V VCES VCE sat typ. = 2.4 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 50-12E6K 14 18 22 13 17 21 t 10, 23 u 8 11, 12 15, 16 19, 20 7 4 5 3 Pin configuration see outlines.

30-12E6K

Abstract: E72873
Contextual Info: MWI 30-12E6K IGBT Module Sixpack IC25 = 29 A = 1200 V VCES VCE sat typ. = 2.5 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 30-12E6K 14 18 22 13 17 21 t 10, 23 u 8 11, 12 15, 16 19, 20 7 4 5 3 Pin configuration see outlines.

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

h12e

Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
Contextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4
High current gain 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E

smbt3904upn

Contextual Info: SMBT3904UPN NPN/PNP Silicon Switching Transistor Array
High current gain 4 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 Tape loading orientation VPW09197 Marking on SC74 package

marking code s2a SOT23

Abstract: smbt3906 MMBT3906 infineon
Contextual Info: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E