ZC281 Search Results

Contextual Info: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZC2800E

Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

zc825

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

SOT-23 LOA

Abstract: ZC2800 ZC2811 ZC2800E ZC2810 ZC5800 ZCI2811 LOA SOT23 ferranti
Contextual Info: FERRANTI semiconductors ZC2800 ZC2810 ZC2811 ZC5800 S c h o ttk y Barrier D iodes NOT TO SCALE FEATURES • Available in three packages: Economical Plastic E-line M icro m in iatu re SOT-23 High R eliability Glass DO-35 • Low Leakage Current • Low Forward Voltage

Contextual Info: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES IS S U E 2 - M A R C H 94 DIODE PIN CONNECTION t — M- CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Power Dissipation at T amb= 25°C Ptot Operating and Storage Temperature Range ZC2800,ZC2811,ZC5800

Contextual Info: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES SSUE 2 - MARCH 1995 O DIODE PIN CONNECTION ii PARTM ARKING DETAIL ZC2800E - E6 ZC2811E - E8 ZC5800E - E9 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L P o w e r D is s ip a tio n at T amb= 25‘>C P .o t

zc sot23

Abstract: ZC2810E
Contextual Info: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT

ZC2800E

Abstract: MV SOT23 ZC2811E ZC5800E DSA003721
Contextual Info: ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6 ZC2811E – E8 ZC5800E – E9 0.6 I =10mA

Contextual Info: Not Recommended for New Design Please Use BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL

MV SOT23

Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Contextual Info: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range

IR 3109

Abstract: ZC2800 ZC2811 ZC5800
Contextual Info: ZC2800 ZC2811 ZC5800 ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION TYPICAL CHARACTERISTICS 0.8 0.8 0.6 CATHODE 0.6 I =10mA 1 ANODE 2 I =10mA F F 0.4 E-Line TO92 Compatible 0.4 I =1.0mA F I =1.0mA ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C

BAT54A

Contextual Info: DISCONTINUED PLEASE USE BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6

SOT23R

Abstract: 12E MARKING ZC2812E wa sot23 SOT23 WA marking 54 sot23 DSA003721
Contextual Info: ZEl SOT23 DUAL SCHOTTKY BARRIER DIODES MUE 3- NOVEWER 1995 1 h f+ 23 32 ZC2tl13E ——— ZC2812E ————— Commo,? Anodl —— — k~ Operating and Storage RATINGS. Temperature Type -. 12E Part Marking r Range Device ——. Series — 1:4E ABSOLUTE MAXIMUM

Contextual Info: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current

IR 3109

Abstract: ZC5800
Contextual Info: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES ISSUE 2 - MARCH 94 DIODE PIN CONNECTION 2 CATHO DE ANODE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb= 25°C F \o t Operating and Storage Tem perature Range T j- T stg ZC2800,ZC2811,ZC5800

rtc with internal backup battery

Abstract: supercapacitor applications RTC 1N5811 AN154 X1205 X1226 X1227 X1228 X1286 X1288
Contextual Info: Intersil Real Time Clock Family User’s Guide Application Note New Devices Integrate Crystal Compensation Circuitry Overall Functionality Intersil Real Time Clock RTC products integrate the real time clock function with microprocessor supervisory functions and nonvolatile memory to form a vital system

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

LQM2MPN

Abstract: LQH3NPN LTC3526L NR3015 ZC2811E LTC3526LB-2 MURATA LQM2MPN LTC3526LEDC NR3010T
Contextual Info: LTC3526L-2/LTC3526LB-2 550mA 2MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN Features Description Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells n V Start-Up Voltage: 680mV IN n 1.5V to 5.25V V OUT Range

Contextual Info: 3 7 b f i 522 DD 2 0 1 1 E S 47 H P L S B a i GEC P L E S S E Y FEBRUARY 1994 PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS2464 - 4.9 MV6639 POCSAG DECODER Supersedes November 1992 edition - DS2464 - 3.3 The MV6639 POCSAG decoder is capable of operating

Diode Marking z3 SOT-23

Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
Contextual Info: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

FMMV105G

Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

C6V2 ST

Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
Contextual Info: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

BAV70-A4

Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film