ZC2800 Search Results

ZC2800E

Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

zc825

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

SOT-23 LOA

Abstract: ZC2800 ZC2811 ZC2800E ZC2810 ZC5800 ZCI2811 LOA SOT23 ferranti
Contextual Info: FERRANTI semiconductors ZC2800 ZC2810 ZC2811 ZC5800 S c h o ttk y Barrier D iodes NOT TO SCALE FEATURES • Available in three packages: Economical Plastic E-line M icro m in iatu re SOT-23 High R eliability Glass DO-35 • Low Leakage Current • Low Forward Voltage

Contextual Info: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES IS S U E 2 - M A R C H 94 DIODE PIN CONNECTION t — M- CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Power Dissipation at T amb= 25°C Ptot Operating and Storage Temperature Range ZC2800,ZC2811,ZC5800

Contextual Info: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES SSUE 2 - MARCH 1995 O DIODE PIN CONNECTION ii PARTM ARKING DETAIL ZC2800E - E6 ZC2811E - E8 ZC5800E - E9 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L P o w e r D is s ip a tio n at T amb= 25‘>C P .o t

zc sot23

Abstract: ZC2810E
Contextual Info: ZC2800E ZC2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 ZC2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT

ZC2800E

Abstract: MV SOT23 ZC2811E ZC5800E DSA003721
Contextual Info: ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6 ZC2811E – E8 ZC5800E – E9 0.6 I =10mA

Contextual Info: Not Recommended for New Design Please Use BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL

IR 3109

Abstract: ZC2800 ZC2811 ZC5800
Contextual Info: ZC2800 ZC2811 ZC5800 ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION TYPICAL CHARACTERISTICS 0.8 0.8 0.6 CATHODE 0.6 I =10mA 1 ANODE 2 I =10mA F F 0.4 E-Line TO92 Compatible 0.4 I =1.0mA F I =1.0mA ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C

BAT54A

Contextual Info: DISCONTINUED PLEASE USE BAT54, BAT54S, BAT54A ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6

Contextual Info: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current

IR 3109

Abstract: ZC5800
Contextual Info: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES ISSUE 2 - MARCH 94 DIODE PIN CONNECTION 2 CATHO DE ANODE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb= 25°C F \o t Operating and Storage Tem perature Range T j- T stg ZC2800,ZC2811,ZC5800

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

ZC3202

Abstract: ZC3201 ZC32 ZC30 ZC3001 BBY20 BBY17 ZC202 ZC29 BBY18
Contextual Info: SILICON DIODES Variable Capacitance Tuning Diodes Type volts Max. !r at 80v |*A BBY17 BBY18 BBY19 BBY20 BBY21 BBY22 100 100 100 100 100 100 0 2 0-2 0-2 02 0-2 0-2 Max. Vr *±20% tolerance Nominal C T* at V R = 4v, f=1M H z pF: 3 8 10 15 22 33 47 Type ZC700

Diode Marking z3 SOT-23

Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
Contextual Info: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

FMMV105G

Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

C6V2 ST

Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
Contextual Info: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

BAV70-A4

Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

ZC2800

Abstract: E7* sot-23 MARKING 7A sot-23 ZC2800E ZC2810 ZC2810E ZC2811 ZC2811E ZC5800 ZC5800E
Contextual Info: SCH OTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCHOTTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.

ZC825 SOT-23

Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

ZC800

Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ