ZC82 Search Results

Low Forward Voltage Diode

Abstract: ZC829A DSA003721 MA330
Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators

ZC825 SOT-23

Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

ZC800

Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

j4a diode

Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators

ZC800

Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 .564 SOT23
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SER IES FOR PCB MOUNTING. C H A R A C T E R IS T IC S at 2 5 °C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q

Contextual Info: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M 1 k CATHODE ANODE ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM B O L R everse Voltage M AX UNIT Vr 25 V Forward Current 'F 200 mA Pow er Dissipation at T amb=25°C

ON code 829B

Abstract: sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931
Contextual Info: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low

ON Semiconductor 831B

Abstract: sot23 mark code CB MARK BE diode SOD523 ZC829ATA ZV931 829b 832a AA SOD323 design ideas mark A1 SOT23
Contextual Info: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase

C20 diode, TO

Abstract: 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820
Contextual Info: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance pF 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts)

ZV930

Abstract: 831B 829B sot23 mark code AE sot23 mark code CB marking j5a ZMDC830 ON code 829B ZC930 ZV931
Contextual Info: 830 SERIES SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low

c2a marking

Abstract: mark B1 sot23 829B 831B ZC832ATA ZC829ATA ZC930 ZV931
Contextual Info: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low

sot23 mark code AE

Abstract: ZDC833 ZC835BTA ZC836BTA 829B ZC829ATA
Contextual Info: ZC829, ZMV829 series ZV831, ZDC833 series SILICON 28V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise

ZC829ATA

Contextual Info: ZC829, ZMV829 series ZV831, ZDC833 series SILICON 28V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in

Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 2 – MAY 1997 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators

sot23 mark code CB

Abstract: sot23 mark code AE ZMDC830 marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5
Contextual Info: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase

LTA 902

Abstract: t9 sot23 diode
Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 - JANUARY 1998_ FEATURES * VHF to UHF o p e ra tio n * L o w lR * E n a b lin g E xce lle n t Phase Noise P erfo rm a n ce * lR T y p ic a lly < 2 00 p A a t 25V APPLICATIO NS * M o b ile rad io s and Pagers

2N3819 spice model

Abstract: construction of varactor diode bfr90 equivalent ZMV830B 2N3819 S T A 933 ZMV836B ZC829A transistor 2N3819 2N3819 equivalent
Contextual Info: Applications Note 9 Issue 4 July 2002 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable

FMMV105G

Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ZC823

Abstract: ZC821 diode 816
Contextual Info: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ISSUE 2 - MARCH 94_ DIODE PIN CONNECTION I M1 i» ii 1 CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Reverse Voltage MAX U N IT Vr 25 V Forw ard Current If 200 mA Power Dissipation at T amb=25°C

Diodes REPLACEMENT

Abstract: DMG3420U zmv934ta
Contextual Info: DATE: 16th August, 2010 PCN #: 2022 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ZC800

Abstract: HYPERABRUPT ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 ZC820 ZC821
Contextual Info: HYPER ABRUPT VARIABLE CAPACITANCE TUNER DIODES S IL IC O N IO N IM P L A N T E D H Y P E R A B R U P T T U N E R D IO D E S Designed for use in HF, V H F, U H F electronic tuning applications where large capacitance variations and high Q are required. Tamb = 25*C

zc825

Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz