200PA Search Results

Low Forward Voltage Diode

Abstract: ZC829A DSA003721 MA330
Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators

ZMV934A

Abstract: ZMV933A ZC934 "Variable Capacitance Diodes" ZC932 ZC933 ZMV930 ZMV931 ZMV932 ZMV933
Contextual Info: ZMV930 SERIES SOD323 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSUE 1 - NOVEMBER 1998 ✪ FEATURES * VHF Tuning * Octave Tuning from 0 TO 6 Volts * High Reliability and Low Parasitics * Low Leakage Typically <200pA at 10V * Miniature Surface Mount Package

15I200PA

Abstract: DIODE A30
Contextual Info: DPG 15 I 200PA advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 35 ns Part number DPG 15 I 200PA Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

diodes SY 200

Abstract: ZC930
Contextual Info: ZC930 SERIES SOT23 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSU E 4 - JUNE 1996 O FEATURES * VHP Tuning * Octave Tuning from 0 TO 6 Volts * High Reliability and Low Parasitics * Low Leakage Typically <200pA at 10V APPLICATIONS * Mobile Radios and Pagers

lt1404

Contextual Info: i^ruum _ LT1464/LT1465 TECHNOLOGY D u a l/Q u a d M icropow er, 1MHz C-Load P ico am p ere Bias C urrent JFET Input O p Am ps F€flTUR€S D C S C R IP TIO n • Input Bias Current: 2pA Max LT1464A 20pA Max (LT1464, LT1465) ■ Supply Current per Amplifier: 200pA Max

10VA

Contextual Info: 7173-50 High Frequency Matrix Card The Model 7173-50 combines high fre­quen­cy per­for­mance with ex­cel­lent DC switching char­ac­ter­is­ tics. It provides 200MHz band­width in a 4x12 configuration. Offset voltage is <15µV per cross­point, and offset current is <200pA. The com­bined AC and DC ca­pa­bil­i­ties make it ideal for mixed signal

j4a diode

Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODE ZC829A ISSUE 3 – JANUARY 1998 FEATURES * VHF to UHF operation * Low IR * Enabling Excellent Phase Noise Performance * IR Typically <200pA at 25V APPLICATIONS * Mobile radios and Pagers * Cellular telephones * Voltage controlled Crystal Oscillators

Contextual Info: urm LT1464/LT1465 TECHNOLOGY D u a l/Q u a d M icro p o w e r, 1MHz C -L o a d P ic o a m p e re Bias C u rre n t JFET In p u t O p A m ps F€fflUR€S DcscMpnon • Input Bias Current: 2pA Max LT1464A 20pA Max(LT1464, LT1465) ■ Supply Current per Amplifier: 200pA Max

ha5062

Contextual Info: CM CO o L f> I jJi HARRIS HA-5062 Series Low Power JFET Input Dual Operational Amplifiers Preliminary • H IG H IN P U T IM P E D A N C E 10’ 2 n • L O W IN P U T B I A S C U R R E N T 200pA • L O W IN P U T O F F S E T C U R R E N T 100pA • V E R Y L O W P O W E R C O N S U M P T IO N

Contextual Info: Specifications: Contact rating: Contact resistance: Insulation resistance: Dielectric strength: Temperature range: Mechanical life: Operating force: Mounting: Soldering conditions: Switching function: Material: max. 50mA, 48V AC/DC; min. 1pA, 20mV AC/DC 50mOhm max. at 1.5mA, 200pA AC

v933a

Abstract: la 4725
Contextual Info: ZMV930 SERIES SOD323 SILICON HYPERABRUPT VARIABLE CAPACITANCE DIODES ISSU E 1 - NOVEMBER 1998 Q_ FEATU RES * V H F T u n in g * O ctave T u n in g fro m 0 T O 6 V o lts * High R e lia b ility and L o w P a ra sitic s * L o w Leak ag e T y p ic a lly < 200pA at 10V

Split System Air Conditioner

Abstract: LT1634 LT1881 LT1881A LT1881CN8 LT1882 LT1884 LT1885
Contextual Info: Final Electrical Specifications LT1881/LT1882 Dual and Quad Rail-to-Rail Output, Picoamp Input Precision Op Amps April 2000 DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Offset Voltage: 50µV Maximum LT1881A Input Bias Current: 200pA Maximum (LT1881A)

omega power amplifier circuit

Abstract: LT1634 LT1881 LT1881A LT1881CN8 LT1882 LT1884 LT1885 marking s14 sot23
Contextual Info: Final Electrical Specifications LT1881/LT1882 Dual and Quad Rail-to-Rail Output, Picoamp Input Precision Op Amps April 2000 DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Offset Voltage: 50µV Maximum LT1881A Input Bias Current: 200pA Maximum (LT1881A)

10I200PA

Contextual Info: DPG 10 I 200PA advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 DPG 10 I 200PA 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

p708

Abstract: P706T
Contextual Info: iSO 9001 He P ow er M itered IM P706P/R/S/T/J, M P7Û 8R/S/T/J anagement Key Features 3/3.3/4.0V \iP Supervisor Circuits - Low supply c u r r e n t ; for Lower power, pin compatible replacements' Maxim MAX706P/R/S/T, MAX708R/S/T - 30% lower supply current: 140yA vs. 200pA

Contextual Info: ANALOG DEVICES INC SIE D • OßlbßOO 003bTE7 53b ■ -"T -7 ? - £ > - AN ALO G D EVICES ANA |<2> Low-Input-Current Operational Amplifiers PM-108/PM-208/PM-308 □ GENERAL DESCRIPTION FEATURES • Low Offset Current . 200pA Max

Contextual Info: ZC830/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES to ZC836/A/B r ISSUE 5 - JANUARY 1998 FE A T U R E S * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lR Typ ically <200pA at 25V 1 * 3 1 SOT23

TI7B

Abstract: M28F256 PLCC32
Contextual Info: / 3 T S G S -T H O M S O N M28F256 * J M , HD g»ilLli(g lii!lD i 256K (32K x 8, Chip Erase FLASH M E M O R Y • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

X0303NG

Abstract: X0303DG X0303BG X0303MG X0303 TAG SCR SCR TAG Semiconductors
Contextual Info: TAG SEMICONDUCTORS LTD b3 8834750 TAG SEMICONDUCTORS LTD ]>e | AA347S0 D000705 2 63C 00705 X0303BG X0303NG SCR'S TAG SEM IC O N D U C T O R S LTD 3.3A 200-800V 20-200pA The X 0 3 0 3 series silicon controlled rectifiers are high performance PNPN devices diffused with TAG'S proprie­

LM108

Abstract: NZ17 LH2108 LM108AD lM1081 LM108T LM108AL LM108D LM108L
Contextual Info: Operational Amplifiers LM108A/LH2108A LM108A/LH2108A Precision Operational Amplifiers Features • ■ ■ ■ ■ ■ Low input bias current — 2nA Low input offset current — 200pA Low input offset voltage — 500/nV Low input offset drift — 5juV/°C

j4a diode

Abstract: ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
Contextual Info: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODES ZC830/A/B to ZC836/A/B ISSUE 4 -JU N E 1996_ I FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lRTypically <200pA at 25V .T ABSOLUTE MAXIMUM RATINGS.

diode J4S

Abstract: ZC831 ZC834A ZC832A
Contextual Info: SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 4-JU N E 1996 L . ZC830/A/B to -?Q836/ A/B FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low iR Enabling Excellent Phase Noise Performance lR T ypically <200pA at 25V ABSOLUTE MAXIMUM RATINGS.

DIODE AA116

Abstract: aa117 diode
Contextual Info: SCRs AA100-AA104 .5A, Planar AA114-AA118 FEATURES • Maximum Gate Trigger Current: 2, 20 or 200pA • Tight Gate Trigger Voltage Range: .44 to ,6V • Voltage R atin g s: to 400V AA107-AA111 DESCRIPTION This date sheet describes Microseml's A A Series 0.5A S C R s designed for low-current