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    TI7B Search Results

    TI7B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Raytheon E le c tr o n ic s Semiconductor Division TM C 22290 M u ltistan d ard D igital V id e o En cod e r Features • All-digital video encoding • Internal digital subcarrier synthesizer • 8-bit parallel CCIR-601/CCIR-656/ANSI/SM PTE 125M input iormat


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    ccir-601/ccir-656/ansi/smccir-624/smpte-170mc2063p7c+6c173ligtmc22290tmc22290r2c44-lead22290r2c0d104 PDF

    Contextual Info: 2.85 TO 10 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR ZR78L SERIES ISSUE 1 - DECEMBER 1995 DEVICE DESCRIPTION FEATURES The ZR78L Series three term inal fixed positive voltage regulators feature internal circu it current lim it and therm al shutdown making


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    zr78l PDF

    Contextual Info: All components used in this connector conform to RoHS standards. R e v is io n s Tolerances 1- 20= + / - 0.2 D a te M .H . 0 4 /1 5 /9 9 0 4 /1 4 /9 9 M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NO TE S plating thickness 5. P e r M IL-P-19468 9. Nickel pi. 100 m in. over


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    il-p-19468zz-r-765qq-b-626q-p-35+6q-s-764-c-530q-b-750ti-7bsm11nbnc/7bsm11-1797bsm11-179 PDF

    Contextual Info: All components used in this connector conform to RoHS standards. Tolerances 1- 20= + / - 0.2 A p p ro v e d D a te M .H . C hecked D a te M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NOTES plating thickness 5. Per MIL-P-19468 9. Nickel pi. 100 min. over


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    mil-p-19468zz-r-765qq-b-626perww-t-799+6qq-p-35qq-s-764qq-c-530qq-b-750ti-7bsf11nt-1797bsf11nt-179 PDF

    apml

    Abstract: circuit diagram for lg tv LG tv circuit diagram LG tv block diagram
    Contextual Info: LG Semicon. Co., LTD. Pin Configuration Description The GMOXOQ is a high speed low powr Xbit 3 c h a n n e l C M O S D,A c o n v e r t e r c o m b i n e d \vith a high stability voltage reference fabricated on a single monolithic chip. IJsing high accuracy current cell. the


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    gmo250qgm0250q22oopfapml+3circuit diagram for lg tvlg tv circuit diagramlg tv block diagram PDF

    Contextual Info: "P -¿U crO lì— 17 FUJITSU MICROELECTRONICS 47E D • 3 7 4 cJ7b2 Ü 0 n 7 5 2 4 ■ November 1990 Edition 2 .0 " DATA S H E E T - MB81C1501 1 M B I T 3 PO R T CMOS DYNAMIC FIELD M EM OR Y 1,175,040 Bit 3 Port CMOS Dynamic Field Memory The Fujitsu MB81C1501 is a 293,760-word x 4 bit 960 pixels x 306 lines field memoty.


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    mb81c1501760-word37417b238-lead+1fpt-38p-m PDF

    B84311

    Contextual Info: F U J I TS U M I C R O E L E C T R O N I C S 47E » 374T7Li2 D O nD Hf i 7 • F M I October 1989 Edition 1.0 : DATA SHEET FUJITSU '= MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL-PORT SRAM 2K x 8 Bits CMOS Dual-Port Static Random Access Memory The Fujitsu M88431 and MB8432 are 2,048 words x 8 bits dual-port static high


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    374t7li2mb8431/32-90/-90u-90lu-12/-12u-12ll16k-bitm88431+7mb8432mb8431mb8432providet-46-23-12mb8431/32-90/-90l/-90llmb8431/32-12/-12l/-12llb84311 PDF

    Contextual Info: R e visio n s D e scri ptio n /A p p ro v e d /D a te Tolerances A p p ro v e d D ate M .H . 1 1 /0 6 /9 6 1- 20= + / - 0.2 1 1 /0 6 /9 6 M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NOTES plating thickness 5. Per MIL-P-19468 9. Nickel pi. 100 min. over


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    mil-p-19468zz-r-765qq-b-626perww-t-799+6qq-p-35qq-s-764qq-c-530qq-b-750ti-7bsf13rnt-597bsf13rnt-59 PDF

    Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE jU P D 7 5 2 3 8 4 BIT SINGLE-CHIP MICROCOMPUTER The /¿PD75238 is a single-chip microcom puter which contains a CPU capable of 1-, 4-, and 8-bit data processing, ROM, RAM, and I/O ports. In addition, it contains a fluorescent display tube FIP controller/


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    pd7523814-bit/zpd75217/pd75238+5ie-75000-rie-75001-rrs-232-cpc-9800ms5a13ie75x PDF

    Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


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    msm56v16160288-word16-bit+2msm56v16160cycles/64 PDF

    Fujitsu MB86900

    Abstract: MB86901 MB86900 CV 203 Ox00000010 A31A
    Contextual Info: FUJITSU MICROELECTRONICS 47E D • 3 7 M cì7bB 0017Sbô 1 «FflI 7=-^-/7-38 « MB86930 PRELIMINARY FUJITSU SPARCIite 32-BIT RISC EMBEDDED PROCESSOR ADVANCE INFORMATION FEATURES 40 MHz 25ns/cycle operating frequency SPARC* high performance RISC architecture


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    0017sbmb8693032-bit25ns/cycle+7mb86930-40cr-gfujitsu mb86900mb86901mb86900cv 203ox00000010a31a PDF

    meab

    Abstract: 0B13 DB10 IDT72605 IDT72615
    Contextual Info: INTEGRATED DEVICE 47E D B 4SSS771 OOCHbTM S B I D T PARALLEL SyncBiFlFO CLOCKED BIDIRECTIONAL FIFO 256 X 18-BIT AND 512 x 18-BIT _ - FEATURES: • « • • • • • • • • • PRELIMINARY IDT72605 IDT72615 Two independent FIFO memories for fully bidirectional


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    5s77118-bitidt72605idt72615+4256x18meab0b13db10 PDF

    Contextual Info: International IO R Rectifier Data Sheet No. PD-6.035F IR2152 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout


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    ir2152a/2105m-1982m0-047ac+1554s2 PDF