MARK T5N Search Results

Contextual Info: 2Gb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 Features Options Mark

t1n6

Abstract: T1N2 T3N6 AL02BT1N0 AL02BT1N6 AL02BT3N9 T2N2 400 500MHZ transceiver AL02BT5N6 AL03BT3N3
Contextual Info: Viking THIN FILM CHIP INDUCTOR－AL Viking’s 0603 and 0402 series inductor is a photo lithographically etched single layer ceramic chip. Viking design provides high SRF, excellent Q, and superior temperature stability. This highly stable inductor family is specification designed for critical tolerance

Contextual Info: singe F D C 3 7 6 9 STANDARD MICROSYSTEMS CORPORATION PC 97 Compliant 3.3V Super I/O Controller With Infrared Support FEATURES 3.3 Volt Operation Intelligent Auto Power Management 16 Bit Address Qualification Optional 2.88MB Super I/O Floppy Disk Controller

HIN238

Contextual Info: HIN230 thru HIN241 +5V Powered RS-232 Transmitters/Receivers March 1994 Features Description • Meets AM RS-232C and V.28 Specifications The HIN230-HIN241 family of RS-232 transmitters/receivers interface circuits meet all EIA RS-232C and V.28 specifications,

Contextual Info: Preliminary Rev. 0.0 . _ . . . L G b e m i c o n C o .,L td . G M M 2 6 4 2 2 2 7 D N T G 2,097,512 w o r d s x 64 b i t SYNCHRONOUS DYNAMIC RAM SO-DIMM Description Features The GM M 2642227DNTG is a 2M x 64 bits Synchronous Dynamic RAM SO-DiMM w hich is assembled 8 pieces o f 2M x 8 bits

V56C1512164MD

Contextual Info: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 200 MHz 166 MHz 133 MHz 100 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -

Contextual Info: V56C1G01164MC PRELIMINARY HIGH PERFORMANCE MOBILE 1.8 VOLT 64M X 16 DDR SDRAM 4 BANKS X 16M X 16 5 6 75 unit System Frequency fCK 200 MHz 166 MHz 133 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 ns Output data access Time (tAC (CL3) 5.0 5.0 6.0 ns Features

V56C1512164MD

Contextual Info: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 200 MHz 166 MHz 133 MHz 100 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -

DDR2 x32

Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.

DDR2 x32

Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.

K4J55323QF-GC20

Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4J55323QF-GC20

Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.3 June 2004 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29C4G48MAZBBAKQ-48 IT

Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)

MT29F4G08ABA

Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

MT29F4G08ABA

Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

MARKING T6C

Abstract: lga 1155 package Code T6S M33 TRANSISTOR 14SSOP QFN-36 LAND PATTERN 14LGA 36pin qfn marking 6-PIN PLASTIC TSON nec 44pin
Contextual Info: Technical Note PACKAGES LINE-UP FOR RF AND MICROWAVE DEVICES Document No. PX10051EJ35V0TN 35th edition Date Published March 2010 NS NEC Electronics Corporation 2001, 2010 Printed in Japan • The information in this document is current as of March, 2010. The information is subject to change

marking 6-PIN PLASTIC TSON

Abstract: MARKING M53 MARKING CODE T5E RENESAS marking code 30SSOP Renesas 30SSOP marking code lga 1155 M33 TRANSISTOR Microwave Devices QFN-52 p5 6pin
Contextual Info: PACKAGES LINE-UP FOR RF AND MICROWAVE DEVICES Common Information www.renesas.com Rev.2.00 Oct 2010 Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please

T5N630 ABB

Abstract: bs 1600 pir sensor T5N630 1SDA054396R1 1SDA05 magnetic Contactor abb a9-30-10 ABB 145 PM 40-20 Breaker T5N400 ABB 1SDA054404R1 S202MC6
Contextual Info: Low Voltage Equipment Innovative Products for the Electrical Contractor - April 2006 Contractor Products Welcome The 5th Edition 1 Welcome to the fifth edition Epack Catalogue which continues to combine a range of products from ABB specially selected for the electrical contractor.

hynix memory lpddr

Abstract: DDR200 DDR266 DDR333 RA12 PAGE-60 HY5MS5B6LF-H
Contextual Info: 256MBit MOBILE ddr SDRAMs based on 4M x 4Bank x16 I/O Document Title 256MBit 4Bank x 4M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Aug.2004 Preliminary 0.2 Modify IDD Current Oct.2004 Preliminary

1HY5RS573225F

Abstract: HY5MS7B6LFP hynix memory lpddr HY5MS7B6LF-H
Contextual Info: 512MBit MOBILE DDR SDRAMs based on 8M x 4Bank x16 I/O Document Title 512MBit 4Bank x 8M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jun.2005 Preliminary 0.2 Defined DC Characteristics Aug.2006

Contextual Info: 512MBit MOBILE DDR SDRAMs based on 8M x 4Bank x16 I/O Document Title 512MBit 4Bank x 8M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jun.2005 Preliminary 0.2 Defined DC Characteristics Aug.2006

Contextual Info: 256MBit MOBILE DDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 256MBit 4Bank x 4M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 1.0 Release Aug. 2006 Final This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for