MAPX Search Results

BF747

Abstract: MBB400 DB64 transistor HJ 388
Contextual Info: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.

Contextual Info: N AMER PHILIPS/DISCRETE bR E bbS3T31 DDEbSIS b T l MAPX BY627 » M AINTENANC E TYPE _ ; v _ CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diode in hermetically sealed axial-leaded ID * envelope capable o f absorbing

BU2522AF

Abstract: BY228
Contextual Info: N AMER PHILIPS/DISCRETE b*ïE D • bbS3^31 002ôbi4ê Philips Sem iconductors SOS MAPX Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

motorola transistor 5331

Abstract: BFQ268
Contextual Info: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to

Contextual Info: Philip^emiconductors • bbSBTBl D O B E l ? 1! OEb MAPX Product specification PNP 1 GHz switching transistor “ MPS3640 N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING PNP general purpose switching transistor in a SOT54 TO-92 envelope. PIN 1 DESCRIPTION

Contextual Info: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.

2322151

Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Contextual Info: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

BF753

Abstract: S22P
Contextual Info: RnlipsSemiconductors M bb53^31 DDg Mf a ^ f l M7^ MAPX N AUER P H I L I P S / D I S C R E T E NPN 5 GHz wideband transistor FEATURES Preliminary specification b?E ]> BF753 PINNING • Low cost • Low noise figure 1 base • 5 V tuner applications. 2 emitter

philips resistor 2322 763

Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Contextual Info: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

BFQ65

Contextual Info: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz

Cathode indicated by blue band

Abstract: BY712 BY713 BY714
Contextual Info: b'ìE D m b h s a ^ a i DDEbse? d i e N AMER PHILIPS/DISCRETE I I mapx A II by712 BY714 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H .T. re c tifie r diodes in glass envelopes intended fo r use in high-voltage a pplications such as the highvoltage supply o f television receivers and m on ito rs. The devices feature non-snap-off characteristics.

BUK555-100A

Abstract: BUK555-100B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE b'lE J> m bbS3T31 0030610 T ib MAPX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

KA2295Q

Abstract: 3543 stereo amp 48QFP 6800P KA2295 48-QFP-1010E AM SW1 sw2 IC 145mHz 28 pin samsung am fm tuner
Contextual Info: KA2295 AM/FM TUNER + MPX INTRODUCTION The KA2295 is a monolithic intergrated circuit desiged for DTS music center. It includes AM/FM IF AMP, FM Quad DET, AM, DET, MAPX function 48-QFP-1010D/1010E FEATURES • Wide operating supply voltage VCC = 6V ~ 12V

MAKING CODE 1H sod

Contextual Info: TMS34094 ISA BUS INTERFACE S PV S 006A - FEBRUARY 1992 - REVISED JUNE 1992 • Simplifies Design of High-Performance ISA PC Graphics Systems • Single-Integrated Circuit Interfaces TMS34020 to ISA Bus • Conforms to ISA Portions of the EISA Rev. 3.11 Specifications

digital dts dolby 5.1 ic

Abstract: hdcd RCA FM Receiver Circuits CDB42518 CP1201 CS42518 CS42518-CQZ CS42518-DQZ IEC60958 IEC-60958
Contextual Info: CS42518 110 dB, 192 kHz 8-Ch Codec with S/PDIF Receiver Features General Description z Eight 24-bit D/A, two 24-bit A/D Converters The CS42518 codec provides two analog-to-digital and eight digital-to-analog delta-sigma converters, as well as an integrated S/PDIF receiver, in a 64-pin LQFP package.

5AGXFB3H4F35C5

Abstract: UG-01062-4 EP4CGX150DF31 5AGX vhdl code lte vhdl code scrambler 5SGXE 5SGXEA7N3F45C4 cyclone4 EP2AGX260FF35
Contextual Info: CPRI MegaCore Function User Guide CPRI MegaCore Function User Guide 101 Innovation Drive San Jose, CA 95134 www.altera.com UG-01062-4.1 Document last updated for Altera Complete Design Suite version: Document publication date: 11.1 November 2011 Subscribe

Contextual Info: MC68HC908LB8 Data Sheet M68HC08 Microcontrollers MC68HC908LB8 Rev. 1 8/2005 freescale.com MC68HC908LB8 Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

Contextual Info: I N AflER PHILIPS/DISCRETE I bb53R31 DDSflS3fl T3T blE D B U 505 BU505D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn power transistor in a TO-220 envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The BU505D has an integrated efficiency

BFG32

Contextual Info: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in

bc177

Contextual Info: | N AMER PHILIPS/DISCRETE b'lE D bb53T31 Q0S7513 415 H A P X BC177 to 179 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes with the collector connected to the case. The BC177 is a high-voltage type and primarily intended for use in driver stages of audio amplifiers

Contextual Info: N AUER PHILIPS/DISCRETE blE P • bbSSTSl 0 Q 3 D 7 fl5 T3 Q M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

cs42528

Abstract: CDB42528 CP1201 CS42528-CQ CS42528-CQZ CS42528-DQZ IEC-60958 464A 464-E
Contextual Info: CS42528 114 dB, 192 kHz 8-Ch Codec with S/PDIF Receiver Features General Description z Eight 24-bit D/A, two 24-bit A/D Converters z 114 dB DAC / 114 dB ADC Dynamic Range z -100 dB THD+N z System Sampling Rates up to 192 kHz z S/PDIF Receiver compatible with EIAJ

10VA

Abstract: CDB42428 CS42428 CS42428-CQ CS42428-CQZ CS42428-DQ CS42428-DQZ
Contextual Info: CS42428 114 dB, 192 kHz 8-Ch Codec with PLL Features General Description z Eight 24-bit D/A, two 24-bit A/D Converters z 114 dB DAC / 114 dB ADC Dynamic Range z -100 dB THD+N z System Sampling Rates up to 192 kHz z Integrated low-jitter PLL for increased system

CDB42428

Abstract: CS42426 CS42426-CQZ CS42426-DQZ CS5361 CS8416 cs1039
Contextual Info: CS42426 114 dB, 192 kHz 6-Ch Codec with PLL Features General Description ! Six 24-bit D/A, two 24-bit A/D Converters The CS42426 codec provides two analog-to-digital and six digital-to-analog delta-sigma converters, as well as an integrated PLL. ! 114 dB DAC / 114 dB ADC Dynamic Range