MA4G Search Results

RNV 304 015

Abstract: 1272 hybrid ADV 1003
Contextual Info: M/A-COM ADV SEMICONDUCTOR B7E D WÊ S bM S lflB O QG OB b f i £ • /m m T - 7 V - 13-01 MA4GM540 4-B it GaAs MMIC/Hybrid Digital Attenuator 2, 4, 8 dB Bits Features ■ BROAD BANDWIDTH .25 GHz - 2 GHz ■ INTEGRAL CMOS DRIVER lDC<1.0 mA ■ TTL COMPATIBLE DRIVE

Contextual Info: M/A-COM ADV SEMICONDUCTOR E?E D Sb421fi3 Q00D2Sb 5 r-si • / MA4GM210-500 GaAs MMIC DC-10 GHz SPDT Switch Chip Features ■ BROADBAND DC - 10 GHz ■ 3 NANOSECOND SWITCHING ■ LOW POWER CONSUMPTION ■ LOW LOSS ■ HIGH ISOLATION ■ HIGH RELIABILITY Description

Contextual Info: ¡PHj yg* y O l l i i lia * Ml M1 11| fi « Im & i t e rt, ^ S H « j» fê l f f i 4 $T ^ ¿M MA4GM201 '20000 MA4GM201-T5. . MA4GM201-500. . MA4GM211-500. . MA4GM202-2000. MA4GM202-T5. . MA4GM202-500. . MA4GM202L-2000 MA4GM202L-T5. MA4GM202L-500. MA4GM202-D14S

MA4GM211-500

Contextual Info: GaAs FET MMIC Products Capability Guide GaAs MMIC SP4T SWITCH MA4GM204 SERIES Features • DC TO 2 GHz ■ SWITCHING SPEED TO 70 NANOSECONDS ■ LOW INSERTION LOSS TO 2 GHz ■ AVAILABLE WITH TTL COMPATIBLE DRIVER Description Specifications @ T a = 25°C This monolithic SP4T switch device is available in chip form

4GM201

Contextual Info: n/A-COM ADV S E M I C O N D U C T O R S7E D SbMEiaB DÜQ051Q 3 MA4GM201-2000 2010 2012 MA4GM201 SERIES 2100 GaAs MMIC DC-2 GHz SPST Switch Features • BROAD BANDWIDTH: DC - 2 GHz ■ 3 NANOSECOND SWITCHING 4GM201 ■ EXCELLENT INTERMODULATION PRODUCTS AND TEMPERATURE

Contextual Info: M M/A-COM ADV SEMICONDUCTOR 27E I> 5b451Ô3 0DGQ322 3 *7'•SHI MA4GM316-2010 •2015 MA4GM316 Series GaAs M M IC D C -2 GHz Transfer Switch Features • BROAD BANDWIDTH DC - 2 GHz ■ < 1 0 0 [iA DC CURRENT CONSUMPTION ■ 3 NANOSECOND SWITCHING ■ HIGH RELIABILITY

Contextual Info: M / A - C O M ADV S E M I C O N D U C T O R S7E D WÈ 5 b 4 H lö 3 00G0375 7 • ymm T H H - i B- O MA4GM541 4-B it GaAs M M IC/Hybrid Digital Attenuator 3, 6 ,1 2 , 2 4 dB Bits) Features ■ BANDWIDTH .25 - 2 GHz ■ INTEGRAL CMOS DRIVER lDC<1<0 mA ■ TTL COMPATIBLE DRIVE

Contextual Info: M M /A - C.VQfl 11/ M "V ADV SEMICONDUCTOR 27E A% m D StH21fl 3 00G0340 5 T < 7 Y /3 > o M A4GM303-500 2000 MA4GM303 SERIES 2010 2012 2100 GaAs MMIC DC - 2 GHz Voltage Variable Absorptive Attenuator Features • SINGLE* OR DUAL DG BIAS CONTROL ■ EASILY CASCADABLE

Contextual Info: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V 2.00 Case Style Features • Superior High Spued M icrow ave Switching Diode • 2-3 Nanosecond Sw itching W h e n D riven From T i l Logic • Capacitance as Low as 0.025 pF Specified at 10 G H z

GaAs p-i-n diodes

Abstract: 0050II
Contextual Info: MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Description Gallium Arsenide PIN diodes offer improved performance

Contextual Info: M/A-COM ADV S E M I C O N D U C T O R 2?E D S 1=43103 D D QD 3 5 2 1 T 'T y .rt-o MA4GM311T-500 GaAs MMIC D C -12 GHz Voltage Variable Absorptive Attenuator Features • DUAL DC BIAS CONTROL ■ EASILY CASCADABLE ■ SMALL SIZE ■ ATTENUATION FLATNESS DC-12 GHz ± .2 dB FOR

MA4GP032

Abstract: MA4gp030 MA4GP GaAs p-i-n diodes
Contextual Info: m 6k ¡C41 M an A M P com pany GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • M ay b e D riv e n D irectly from T TL S ig n a ls • L ow S e rie s R esista n ce • F ast Sw itch in g S p e e d • N o R e v e rse B ia s R eq u ired • A v ailab le a s P assivated C h ips

GaAs p-i-n diodes

Contextual Info: MfaCCtt M an A M P company GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • May be Driven Directly from TTL Signals • Low Series Resistance • Fast Switching Speed • No Reverse Bias Required • Available as Passivated Chips Description

A1L DIODE

Abstract: diode l 0607 MA4GC6772 Diode B4 diode b3 B4 diode
Contextual Info: MA4GC6772 77 GHz GaAs Multi-Throw PIN Diode Switch Features n n n n n n n n V 4.00 OD-S-1243 77 Ghz Frequency Response 4.0 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion

MA4GP907

Abstract: MA4GP907-T MA4GP907-W
Contextual Info: MA4GP907 GaAs Flip-Chip PIN Diodes Features n n n n n n n V 4.00 Package Outline Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation

Contextual Info: tt/A-COM ADV SEMICONDUCTOR B7E D S bM21ö3 0D 0Q 37 b 4 x * w MA4GM995 One-Bit GaAs M M IC/Hybrid Digital A ttenuator Features • BROAD BANDWIDTH 5 MHz - 2 GHz ■ LOW DC POWER CONSUMPTION ■ INTEGRAL CMOS DRIVER lDc < 15 mA ■ TTL COMPATIBLE DRIVE ■ BIT 10 dB

GaAs p-i-n diodes

Contextual Info: jyfacm MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Gallium Arsenide PIN diodes offer improved performance

MA4GM202LT-2010

Contextual Info: M/A-COfl ADV SEMICONDUCTOR 27E D 5b451Ô3 G0ÜD2MÔ b A U Q O M If r* s i-li MA4GM202LT-500 2000 2010 2012 2100 MA4GM202LT SERIES GaAs M M 1C DC-2 GHz SPOT Switch Features • BROAD BANDWITH DC-2 GHz ■ 3 NANOSECOND SWITCHING ■ LOW DISTORTION ■ LOW SWR REFLECTIVE

x-band mmic

Contextual Info: M / A - CO M ADV S E M I C O N D U C T O R 57E D 5fc>M21fl3 O G O D É1 Ô fi r-5/// MA4GM261 and MA4GM262 GaAs MMIC 8-12 GHz X-Band] SPST and SPOT Switch Chips Features • HIGHER ISOLATION THAN BROADBAND SWITCHES ■ LOWER LOSS THAN BROADBAND SWITCHES .

truth table for 4 to 16 decoder

Abstract: truth table for 1 to 4 decoder truth table for 1 to 16 decoder truth table MA4GM204MDE-2032S
Contextual Info: M/A-COM ADV SEMICONDUCTOR S7E D 5tM 21S3 00002=10 5 -r-s i-u MA4GM204MD-2032S GaAs MMIC 5 MHz - 2 GHz SP4T Matched Switch W ith Driver Features • BROAD BANDWIDTH 5 MHz - 2 GHz ■ MATCHED ALL PORTS ■ 50 NANOSEC SWITCHING ■ LOW LOSS 2 dB at 1 GHz ■ LOW CURRENT CONSUMPTION

Contextual Info: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4GP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

MA4GFCP910

Abstract: PIN diodes 10GHZ
Contextual Info: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4AGP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

Contextual Info: M/A-CÔM MM ADV SEMICONDUCTOR 57E D S b M S I Ô B 0 0 0 0 22 b ? T -S I • !/ MA4GM202T-500 2000 2010 2012 2100 MA4GM202T SERIES GaAs M M IC D C -4 GHz SPDT Switch Features ■ BROAD BANDWIDTH: DC - 4 GHz ■ < 3 NANOSECOND SWITCHING jy S K X M ■ CURRENT CONSUMPTION ¿100 ¡jA

MA4GP907

Abstract: 10ghz pin diode
Contextual Info: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL