SB421FI3 Search Results

Contextual Info: M/A-COM ADV SEMICONDUCTOR E?E D Sb421fi3 Q00D2Sb 5 r-si • / MA4GM210-500 GaAs MMIC DC-10 GHz SPDT Switch Chip Features ■ BROADBAND DC - 10 GHz ■ 3 NANOSECOND SWITCHING ■ LOW POWER CONSUMPTION ■ LOW LOSS ■ HIGH ISOLATION ■ HIGH RELIABILITY Description

MIL-STD-883C

Abstract: MIL-STD883c 883C AT-540 SW-582 AT-537 aCOM marking B 1010 ra MILSTD883C
Contextual Info: M/ A- CO M/ M I C R O E L E C T R O N I C S b^E D • Sb421fi3 D D D l l S O ATI « M A C O A fi^W x Digital Attenuators Space Qualified AT-5XX Series Electrical Specifications Part# AT-537 Frequency Ra<None>nge VSWR Part# 20-600 MHz AT-540 Frequency Range

AMC-117

Abstract: AMS117 AM-117 AMS-117 ams telephone RF amplifier AMS AMS1
Contextual Info: n/A - CO M/ M I C R O E L E C T R O N I C S St.MElê3 0000=117 TST b'iE D Low Noise Amplifier, 8 dB 10-200 MHz • ■ ■ ■ 1.3 dB Typical Midband Noise Figure + 3 0 dBm Typical Midband Intercept Ideal for Broadband IF Applications Fully Hermetic Package AMS -117

Contextual Info: M/A-Con ADV SEMICONDUCTOR AmGEM Us H7E D Sb45ifl3 Q o o o e m s MA4GM536 GaAs M M IC DC - 2 GHz SP4T Switch EM Features • BROAD BANDWIDTH DC - 2 GHz ■ SMALL SIZE ■ 3 NANOSEC SWITCHING ■ LOW LOSS 1 dB at 1 GHz t U LOW CURRENT CONSUMPTION (^ 5 0 Description

DPDT SWITCHES

Abstract: dpdt rf switch
Contextual Info: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a

Contextual Info: /qm M/A - CO M ADV S E M I C O N D U C T O R E7E D 5L.4E1Ö3 00 G0 54 4 T r•siii MA4GM202L-2000 202L-2010 202L-2012 MA4GM202L SERIES 202L-2100 GaAs MMIC DC-2 GHz SPDT Switch Features ■ LOW LOSS ■ 3 NANOSECOND SWITCHING ■ EASILY CASCADABLE ■ HIGH RELIABILITY