5B451 Search Results

Contextual Info: M M/A-COM ADV SEMICONDUCTOR 27E I> 5b451Ô3 0DGQ322 3 *7'•SHI MA4GM316-2010 •2015 MA4GM316 Series GaAs M M IC D C -2 GHz Transfer Switch Features • BROAD BANDWIDTH DC - 2 GHz ■ < 1 0 0 [iA DC CURRENT CONSUMPTION ■ 3 NANOSECOND SWITCHING ■ HIGH RELIABILITY

MA4GM202LT-2010

Contextual Info: M/A-COfl ADV SEMICONDUCTOR 27E D 5b451Ô3 G0ÜD2MÔ b A U Q O M If r* s i-li MA4GM202LT-500 2000 2010 2012 2100 MA4GM202LT SERIES GaAs M M 1C DC-2 GHz SPOT Switch Features • BROAD BANDWITH DC-2 GHz ■ 3 NANOSECOND SWITCHING ■ LOW DISTORTION ■ LOW SWR REFLECTIVE

Contextual Info: N/A-COM jq m ADV S E M I C O N D U C T O R B7E D 5b451ö3 OOOOSDö 5 T- 51-11 MA4GM201T-500 GaAs MMIC DC-4 GHz SPST Switch Chip Features • BROAD BANDWIDTH: DC - 4 GHz ■ VERY FAST SWITCHING (3 NS) ■ VERY LOW POWER CONSUMPTION (FET BASED TECHNOLOGY)

Contextual Info: M/A-COM/ MIC ROEL EC TR ON IC S hlE D • 5b451ö3 DGDQ731 436 ■ MACO Digital Attenuator, 32 dB, 2 Bit DC-2 GHz Features AT-272 CR-6 • Attenuation 16 dB Steps to 32 dB • Temperature Stability +/- 0.18 dB from -55°C to +85° C Typical • Ultra Low DC Power Consumption

Contextual Info: M/A-COM ADV S E M I C O N D U C T O R 2?E D S 1=43103 D D QD 3 5 2 1 T 'T y .rt-o MA4GM311T-500 GaAs MMIC D C -12 GHz Voltage Variable Absorptive Attenuator Features • DUAL DC BIAS CONTROL ■ EASILY CASCADABLE ■ SMALL SIZE ■ ATTENUATION FLATNESS DC-12 GHz ± .2 dB FOR

Contextual Info: M/A-CÔM MM ADV SEMICONDUCTOR 57E D S b M S I Ô B 0 0 0 0 22 b ? T -S I • !/ MA4GM202T-500 2000 2010 2012 2100 MA4GM202T SERIES GaAs M M IC D C -4 GHz SPDT Switch Features ■ BROAD BANDWIDTH: DC - 4 GHz ■ < 3 NANOSECOND SWITCHING jy S K X M ■ CURRENT CONSUMPTION ¿100 ¡jA

Contextual Info: M / A - C O M ADV S E M I C O N D U C T O R MA' 27E I> 5 b 4 2 i a 3 0 0 0 D S 7 Ô .4 MA4GM204L-500 GaAs M M IC D C -2 GHz SP4T Switch Features • BROAD BANDWIDTH DC - 2 GHz ■ SMALL SIZE ■ 3 NANOSECOND SWITCHING ■ LOW LOSS 1 dB @ 1 GHz ■ LOW CURRENT CONSUMPTION ^100 /xA

ADV 1003

Contextual Info: M/A-COM ADV SEMICONDUCTOR S7E D S t.4 2 1 0 3 Qd'DDEbM H MA4GM272-500 GaAs MMIC DC-2 0 GHz SPOT Switch Features • BROAD BANDWIDTH: DC -1 8 GHz ■ 3 NANOSECOND SWITCHING ■ LOW POWER CONSUMPTION FET BASED TECHNOLOGY ■ EXCELLENT INTERMODULATION PRODUCTS AND TEMPERATURE

DPDT 6 terminal switch internal diagram

Abstract: dpdt rf switch
Contextual Info: fl/ A - C 0 fl A D V SEMICONDUCTOR B7E D SbMSlfl3 0 0 0 0 3 0 0 1 r-5/*// MA4GM401-5001 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ LOW DISTORTION - 60 dBc FROM 10 KHz - 2 GHz ■ ON CHIP MATCHING RESISTOR FOR IMPROVED SWR IN CASCADING

Contextual Info: M/A-CON/ MIC RO ELECT RO NICS S b M S l ö B O D D D b O e 75b • MACO b'ïE D A f í ,K GaAs SPST Matched Switch 0.6-1.1 GHz SO-8 Features • • • • • t ^ y ’93 SW-349 Operates with +3 volts control Very Low Power Consumption Matched Input and Output