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Abstract: No abstract text available
Text: GaAs PIN Diode Chips V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Anode May be Driven Directly by TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required RoHS Compliant Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many
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Untitled
Abstract: No abstract text available
Text: GaAs PIN Diode Chips RoHS Compliant Rev 1 Features ♦ ♦ ♦ ♦ ♦ Anode May Be Directly Driven By TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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MA4GP022-277
Abstract: M541 MA4GP030 GaAs p-i-n diodes MA4GP030-30 MAX356
Text: GaAs PIN Diode Chips RoHS Compliant Rev. V1 Features ♦ ♦ ♦ ♦ ♦ Anode May Be Directly Driven By TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many
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PH1819-60
Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies
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MAAM-008863
Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America
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40W267
MAAM-008863
MAMU-009156
transistor MY52
200W MOSFET POWER AMP
transistor MY51
GPS Antenna AT65
MA4ST350
MADR-007690-DR0002
a74 sot-89
SM4T mixer
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Analog Dialogue
Abstract: MSC 501 302 diode AD9356 schematic diagram UPS 600 Power tree Raytheon Company GPS AD8137-A ADuM7234 Sheingold ADA4691-4 ADP5022
Text: Volume 44, Number 1, 2010 A forum for the exchange of circuits, systems, and software for real-world signal processing In This Issue 2 Editors’ Notes and Product Introductions 3 Termination of High-Speed Converter Clock Distribution Devices 5 ADIsimPower Provides Robust, Customizable DC-to-DC Converter Designs
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Engineer--39
Dis13
M02000441-0-5/10
Analog Dialogue
MSC 501 302 diode
AD9356
schematic diagram UPS 600 Power tree
Raytheon Company GPS
AD8137-A
ADuM7234
Sheingold
ADA4691-4
ADP5022
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MADP
Abstract: MA4GP030 M541 MA4GP022-277 madp pin diode
Text: GaAs PIN Diode Chips V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Anode May be Driven Directly by TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required RoHS Compliant Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many
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MA4GP022-277
Abstract: MA4gp030 MA4GP030-30 M541
Text: GaAs PIN Diode Chips RoHS Compliant V1 Features ♦ ♦ ♦ ♦ ♦ Anode May Be Directly Driven By TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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GaAs p-i-n diodes
Abstract: 0050II
Text: MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Description Gallium Arsenide PIN diodes offer improved performance
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MA4GP032
Abstract: MA4gp030 MA4GP GaAs p-i-n diodes
Text: m 6k ¡C41 M an A M P com pany GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • M ay b e D riv e n D irectly from T TL S ig n a ls • L ow S e rie s R esista n ce • F ast Sw itch in g S p e e d • N o R e v e rse B ia s R eq u ired • A v ailab le a s P assivated C h ips
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GaAs p-i-n diodes
Abstract: No abstract text available
Text: MfaCCtt M an A M P company GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • May be Driven Directly from TTL Signals • Low Series Resistance • Fast Switching Speed • No Reverse Bias Required • Available as Passivated Chips Description
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GaAs p-i-n diodes
Abstract: No abstract text available
Text: jyfacm MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Gallium Arsenide PIN diodes offer improved performance
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MA47420-132
Abstract: MA47054 ma8334 diode 4P604 4p60 MA4PH301 ma-47266 MA4P9 MA4P504-132 MA8334
Text: PIN DIODE SELECTION GUIDE SILICON BEAM LEAD PIN DIODES Specifications @ T a = 25°C MODEL NUMBER VOLTAGE RATING volts MAXIMUM CAPACITANCE (PF) MA4P800 MA4P801 MA4P802 MA4P803 MA4P461 MA4P462 100 100 100 100 50 30 .025 .030 .040 .050 .070 .120 MAXIMUM Rs
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MA4P800
MA4P801
MA4P802
MA4P803
MA4P461
MA4P462
MA4P150
MA4P151
MA4P152
MA4P153
MA47420-132
MA47054
ma8334 diode
4P604
4p60
MA4PH301
ma-47266
MA4P9
MA4P504-132
MA8334
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MA4P275S
Abstract: MA47111 ma47047 ma4p274ck MA4P303-30 MA4P202-134 MA47054 MA47420 ma4gp030 ma-47266
Text: PIN Diodes S E L E C T IO N G U ID E 1- 3 M O D EL N U M B ER M O D EL 1 N 5719. . . 1N5767 MA47041 MA47047 MA47053 . MA47054 MA47055 . MA47056 MA47057 . MA47058 MA47059 MA47100 MA47110 MA47111 MA47120 . MA47123 MA47200 MA47201 MA47202 MA47203 MA47204 MA47205
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1N5767
MA47041
MA47047
MA47053
MA47054
MA47055
MA47056
MA47057
MA47058
MA47059
MA4P275S
MA47111
ma4p274ck
MA4P303-30
MA4P202-134
MA47420
ma4gp030
ma-47266
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