MA4GP Search Results

Contextual Info: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V 2.00 Case Style Features • Superior High Spued M icrow ave Switching Diode • 2-3 Nanosecond Sw itching W h e n D riven From T i l Logic • Capacitance as Low as 0.025 pF Specified at 10 G H z

GaAs p-i-n diodes

Abstract: 0050II
Contextual Info: MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Description Gallium Arsenide PIN diodes offer improved performance

MA4GP032

Abstract: MA4gp030 MA4GP GaAs p-i-n diodes
Contextual Info: m 6k ¡C41 M an A M P com pany GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • M ay b e D riv e n D irectly from T TL S ig n a ls • L ow S e rie s R esista n ce • F ast Sw itch in g S p e e d • N o R e v e rse B ia s R eq u ired • A v ailab le a s P assivated C h ips

GaAs p-i-n diodes

Contextual Info: MfaCCtt M an A M P company GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • May be Driven Directly from TTL Signals • Low Series Resistance • Fast Switching Speed • No Reverse Bias Required • Available as Passivated Chips Description

MA4GP907

Abstract: MA4GP907-T MA4GP907-W
Contextual Info: MA4GP907 GaAs Flip-Chip PIN Diodes Features n n n n n n n V 4.00 Package Outline Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation

GaAs p-i-n diodes

Contextual Info: jyfacm MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Gallium Arsenide PIN diodes offer improved performance

Contextual Info: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4GP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

MA4GP907

Abstract: 10ghz pin diode
Contextual Info: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

MA4GP905

Abstract: M541 10ghz pin diode
Contextual Info: MA4GP905 GaAs RoHS Compliant Rev. V2 Beamlead PIN Diode Features MA4GP905 ♦ Low Series Resistance ♦ Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 3 Nanosecond Switching Speed ♦ Can be Driven by a Buffered +5V TTL ♦ Silicon Nitride Passivation

MA4GP907

Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation

schematic WELDER

Abstract: als38a PIN Diode Driver Circuit PIN DIODE SPDT DRIVER CIRCUITS
Contextual Info: MA4GP900 Series & GaAs Beam Lead PIN Diodes Features • SUPERIOR HIGH SPEED MICROWAVE SWITCHING DIODE ■ 2-3 NANOSECOND SWITCHING WHEN DRIVEN FROM TTL LOGIC ■ CAPACITANCE AS LOW AS 0.025 pF SPECIFIED AT 10 GHz ■ SERIES RESISTANCE AS LOW AS 2 OHMS SPECIFIED AT 10 GHz

GaAs p-i-n diodes

Abstract: 20ii2
Contextual Info: m a n A M P com pany GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • • • • • May be Driven Directly from '1TL Signals Low Series Resistance Fast Switching S peed N o Reverse Hias R equired Available as Passivated Chips Description Gallium A rsenide PIN d io d es offer im p ro v e d p e rform a nce

Contextual Info: MA4GP907 GaAs Flip-Chip PIN Diodes Features n n n n n n n V 5.00 Package Outline Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation

Contextual Info: Ajál, M ah A M P tcompany GaAs Beam-Lead PIN Diodes MA4GP900 Series V3.00 Case Style Features • Superior High Speed Microwave Switching Diode • 2-3 N anosecond Switching When Driven From TTL Logic • Capacitance as Low as 0.025 pF Specified at 10 GHz

schematic WELDER

Abstract: capacitor welder schematic
Contextual Info: GaAs Beam-Lead PIN Diodes MA4GP900 Series V3.00 Case Style Features ● ● ● ● ● Superior High Speed Microwave Switching Diode 2-3 Nanosecond Switching When Driven From TTL Logic Capacitance as Low as 0.025 pF Specified at 10 GHz Series Resistance as Low as 2 Ohms Specified at

Contextual Info: MA4GP907 GaAs Flip-Chip PIN Diodes Features n n n n n n n V 4.00 Package Outline Low Series Resistance, 4 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed Can be Driven by Buffered TTL Silicon Nitride Passivation

Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation

Contextual Info: MA4GP905 GaAs Beamlead PIN Diode V3 MA4GP905 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 3 Nanosecond Typical Switching Speed Can be Driven by a Buffered +5V TTL

M541

Abstract: MA4GP905
Contextual Info: MA4GP905 GaAs Beamlead PIN Diode V3 MA4GP905 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 3 Nanosecond Typical Switching Speed Can be Driven by a Buffered +5V TTL

Contextual Info: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V3.00 Features Case Style • Superior High Speed Microwave Switching Diode • 2-3 Nanosecond Switching When Driven From TTL Logic • Capacitance as Low as 0.025 pF Specified at 10 GHz • Series Resistance as Low as 2 Ohms Specified at

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

Contextual Info: GaAs PIN Diode Chips V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Anode May be Driven Directly by TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required RoHS Compliant Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many

Contextual Info: GaAs PIN Diode Chips RoHS Compliant Rev 1 Features ♦ ♦ ♦ ♦ ♦ Anode May Be Directly Driven By TTL Signals RoHS Compliant Low Series Resistance Fast Switching Speed No Reverse Bias Required Description Gallium Arsenide PIN diodes offer improved performance characteristics over silicon in many

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM