M29W400 APPLICATION Search Results

M29W400

Abstract: M29W400B M29W400T
Contextual Info: M29W400T M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

FBGA48

Abstract: M29W400 M29W400B M29W400T AI02065
Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical

Contextual Info: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: SGS-THOMSON raD»HlLl Ê'inM l)i!lD(ei M29W400T M29W400B 4 Mb (x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 100ns > FAST PROGRAMMING TIME ■ 10|is by Byte / 1 6|is by Word typical

Contextual Info: SGS-THOMSON raD»HlLl Ê'inM l)i!lD(ei M29W400T M29W400B 4 Mb (x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 100ns > FAST PROGRAMMING TIME ■ 10|is by Byte / 1 6|is by Word typical

RD 24 105 RP

Abstract: M29W400B M29W400 M29W400T
Contextual Info: M29W400T M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29W400T M29W400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

M29W400B

Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

Contextual Info: M29W400T M29W400B SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME

Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in

M29W400B

Abstract: M29W400 M29W400T
Contextual Info: M 29W 400T M 29W 400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10 |iS by Byte / 1 6|os by Word typical

M29W400

Abstract: M29W400B M29W400T
Contextual Info: M 29W 400T M 29W 400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10|iS by Byte / 1 6|as by Word typical

M29W400

Abstract: nc 555 M29W400BB M29W400BT TFBGA48
Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME FBGA – 10µs per Byte/Word typical

M25P08

Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Contextual Info: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010