M29F400B Search Results

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT K 1603 24v
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Features • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5V±10% supply voltage for program, erase and read operations ■ Access time: 45ns ■ Programming time – 8µs per Byte/Word typical ■

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte/16µs by Word

TSOP48 Package

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

Contextual Info: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400BC

Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

29F400BB

Abstract: 29F400BT M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 11 MEMORY BLOCKS

Contextual Info: M29F400T M29F400B SGS-THOMSON IIIIMJì ILIì M W IIÈÌ 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|js by Byte / 1 6jas by Word typical

M29F400B

Abstract: M29W400B QRFL0006
Contextual Info: QRFL0006 QUALIFICATION REPORT M29F400B, M29W400B T6X-U35: 4 Mbit x8/x16 Single Supply Flash Memory INTRODUCTION The M29F400B and M29W400B are 4 Mbit Single Supply (respectively 5V and 3V) Flash memory products with Boot Block partitioning and organized as 512 KByte of 8 bits each or 256 Kword of 16 bits each.

sgs m29f400b

Abstract: M29F400 M29F400B M29F400T
Contextual Info: W , S G S -T H O M S O N k7# . M29F400T M29F400B 4 Mb x8/x16, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|us by Byte / 1 6|as by W ord typical

M29F400BB

Abstract: M29F400BT sequential timer using 555
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400

Abstract: M29F400B M29F400BB M29F400BT M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

29f400b

Contextual Info: M29F400T M29F400B SGS-THOMSON 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400BB

Abstract: M29F400BT m29F
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■

A13D

Contextual Info: M29F400T M29F400B Æ T S G S -T H O M S O N * l i . IM M i[ L Ë (g W i[] S 4 Mb (x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME

C1166

Abstract: oxford did AN1166 AN1185 M29F400 M29F400B M29F400BB M29F400BT M29W400 M29W400B
Contextual Info: AN1166 APPLICATION NOTE Software Drivers for the M29F400B and M29W400B Flash Memories CONTENTS • INTRODUCTION ■ THE M29F400B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F400B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM

DG7-132

Abstract: 2BT-5 ci237 ha
Contextual Info: M29F400T M29F400B RiflD ®[i[Ui©iiMRflD©i SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY SGS-THOMSON PRODUCT PREVIEW • DUAL x8 and x16 ORGANISATION ■ FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME

M29F400

Abstract: M29F400B M29F400BB M29F400BT M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns