M29F400 Search Results

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT K 1603 24v
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Features • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5V±10% supply voltage for program, erase and read operations ■ Access time: 45ns ■ Programming time – 8µs per Byte/Word typical ■

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte/16µs by Word

TSOP48 Package

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

M29F400

Abstract: M29W400
Contextual Info: QUALIFICATION REPORT M29F400 T6-U20: 4 Mb x8/x16 SINGLE SUPPLY FLASH MEMORY in SO44 and TSOP48 INTRODUCTION The M29F400 is a 4 Mb Single Supply (5V) Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. It is offered in SO44 and TSOP48 packages. It can be programmed and erased

Contextual Info: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400BC

Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

AN943

Abstract: M29F400 M29F400B M29F400T M29W400 M29W400B M29W400T AD1-AD15 M29F400BC
Contextual Info: AN943 APPLICATION NOTE SOFTWARE DRIVERS for M29F400 and M29W400 FLASH MEMORIES CONTENTS Introduction The M29F400 Programming Model Modifying code from m29F400 Generating SGS-THOMSON Code C Library Functions Adapting the Software for the Target System Limitations of the code

29F400BB

Abstract: 29F400BT M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 11 MEMORY BLOCKS

Contextual Info: M29F400T M29F400B SGS-THOMSON IIIIMJì ILIì M W IIÈÌ 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|js by Byte / 1 6jas by Word typical

M29F800FT

Abstract: M29F800 M29F400FB M29F400FT
Contextual Info: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3

sgs m29f400b

Abstract: M29F400 M29F400B M29F400T
Contextual Info: W , S G S -T H O M S O N k7# . M29F400T M29F400B 4 Mb x8/x16, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|us by Byte / 1 6|as by W ord typical

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400BB

Abstract: M29F400BT sequential timer using 555
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400

Abstract: M29F400B M29F400BB M29F400BT M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

29f400b

Contextual Info: M29F400T M29F400B SGS-THOMSON 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F800FT

Abstract: m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB
Contextual Info: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3

M29F400BB

Abstract: M29F400BT m29F
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■