FBGA48 Search Results

FBGA48C

Abstract: FBGA48 11015
Contextual Info: FBGA48C LSI Assembly Units : mm • FBGA48C (CSP TYPE1) φ0.45±0.05 0.08 A B 0.35±0.1 0.6 1.2Max. P=0.8x6 G F E D C B A 7.0±0.1 6.7 7.0±0.1 6.7 0.8 B 1.1±0.15 1Pin MARK P=0.8×6 1.1±0.15 (0.1) 1 2 3 4 5 6 7 S A 0.1 S ∗ The contents described herein are subject to change without notice.

FBGA-484

Abstract: A54SX32A-CQ256 actel FG484 package mechanical drawing B22 filament base CQ256 land pattern QFP 208 SX72 A54SX32A-FG484 silicone paste p4 FG484
Contextual Info: Actel CQFP – FBGA484 Adapter Boards SI-SX32-ACQ256SFG484 and SI-SX72-ACQ256SFG484 Contents 1). Introduction 2). Appendix A – SI-SX32-ACQ256SFG484 Mechanical Drawing and Assembly instructions 3). Appendix B – SI-SX72-ACQ256SFG484 Mechanical Drawing and Assembly

Contextual Info: TC51WHM716AXBN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,608-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM716AXBN is a 134,217,728-bit pseudo static random access memory PSRAM organized as 8,388,608 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high

M29W400B

Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

HYE18P16161AC

Contextual Info: Data Sheet, V2.2, July 2004 HYE18P16161AC-70/L70 HYE18P16161AC-85/L85 16M Asynchronous/Page CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-7-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: HY29LV400 4 Mbit 512K x 8/256K x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full

Contextual Info: ¡ Semiconductor MS52C1162A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM DESCRIPTION The MS52C1162A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable

Contextual Info: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V

Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

QFP-240

Abstract: QFP240 CG61304P LQFP100 LQFP120 LQFP144 LQFP176 LQFP48 LQFP64 LQFP80
Contextual Info: New products CG61P CMOS Gate Array CG61P Series This series features the first gate array incorporating an analog PLL. Four frames are available in a capacity range from 70K to 300K: two types are provided for analog PLLs of a low-frequency version 90 to 160 MHz ;

taiyo PSR4000

Abstract: Shipping Trays kostat 10 x 10 nitto hc100 Kostat tray PSR4000 aus5 EPAK EPAK TRAY JEDEC Kostat PSR4000 aus5
Contextual Info: Table of Contents Introduction . 2 CHIP SCALE PACKAGES . 2

MS52C1161A

Abstract: FBGA48P
Contextual Info: ¡ Semiconductor MS52C1161A 1998.6 Preliminary 131,072-Word X 8-Bit STATIC RAM + 2,097,152-Word X 8-Bit One Time PROM DESCRIPTION The MS52C1161A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and 2,097,152-word by 8-bit electrically switchable 16Mb One Time PROM featuring 2.7V to 3.6V

29lv160

Abstract: 29lv160 Flash
Contextual Info: HY29LV160 16 Mbit 2M x 8/1M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

Contextual Info: TC51WHM516AXBN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM516AXBN is a 33,554,432-bit pseudo static random access memory PSRAM organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high

Contextual Info: TC51W6417XB-80,-85 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W6417XB is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high

W964A6BBN

Abstract: W964A6BBN70 W964A6BBN80
Contextual Info: W964A6BBN 1M WORD x 16 BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: HYE18P16161AC-70/85 Graphics & Specialty Memories 16M Async/Page CellularRAM Version 1.8 06.2003 HYE18P16161AC-70/85 16M Async/Page CellularRAM Revision History – V1.31, 11/00 Fully synchronous bus interface with multiplexed address and data, asyncronous write, 1.8V

FBGA48

Abstract: MS52C182A TSOP44
Contextual Info: 1電子デバイス MS52C182A 1998.6 暫定 65,536-WordＸ16-Bit or 131,072-WordＸ8-Bit STATIC RAM ＋ 524,288-WordＸ16-Bit or 1,048,576-WordＸ8-Bit One Time PROM • 概要 MS52C182Aは65,536ワ−ドＸ16ビット／131,072ワ−ドＸ8ビット が切り替え可能な1M

FBGA-484

Abstract: FBGA1152 FBGA896 FBGA676 Actel PQFP208 Actel APA075 import 500k PQFP208 FBGA256 APA150 -TQ1001 datasheet
Contextual Info: Application Note AC300 ProASIC to ProASICPLUS® Design Migration Introduction The ProASICPLUS family of FPGAs with FlashLock® combines the advantages of ASICs with the benefits of programmable devices through nonvolatile Flash technology. This enables engineers to create highdensity systems using existing ASIC or FPGA design flows and tools. In addition, the ProASICPLUS family

Contextual Info: TC51WKM516AXGN75 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WKM516AXGN is a 33,554,432-bit pseudo static random access memory PSRAM organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high

FBGA48

Abstract: M59DR032A M59DR032B
Contextual Info: M59DR032A M59DR032B 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read – VPP = 12V: optional Supply Voltage for fast Program and Erase ■ ASYNCHRONOUS PAGE MODE READ

W964B6BBN

Abstract: W964B6BBN70 W964B6BBN80
Contextual Info: W964B6BBN 1M WORD x 16 BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3