2251H Search Results

Contextual Info: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

555H

Abstract: MX29F200B MX29F200T
Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Contextual Info: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

29F200T

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

FPT-48P-M20

Abstract: DS05 FPT-48P-M19 MBM29F200BA
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–20813–2E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 MBM29F200TA/MBM29F200BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-4E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 • GENERAL DESCRIPTION The MBM29F200TC/BC is a 2M-bit, 5.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K

MX29F200C

Abstract: PM1250 MX29F200CT Q0-Q15
Contextual Info: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture

Macronix

Abstract: architecture in 4289 MX29F400C Macronix International am29f400b 2257h
Contextual Info: APPLICATION NOTE Migrating to the Macronix MX29F200C & MX29F400C Flash Families from Spansion Am29F200B & Am29F400B Memory Devices. Contents Introduction. 2

MX29F200CT

Abstract: Q0-Q15 MX29F200CTTI-70G
Contextual Info: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture

HY29F200

Abstract: HY29F200B HY29F200T
Contextual Info: HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 70 ns access time · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

555H

Abstract: MX29F200B MX29F200T
Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Contextual Info: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture

Contextual Info: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands

29F200

Abstract: 29F200 amd 29F200T
Contextual Info: a P R E L IM IN A R Y Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ — M inimizes system level power requirements

MBM29F200BC-70PFTN

Abstract: DS05 FPT-48P-M19 MBM29F200BC
Contextual Info: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-3E FLASH MEMORY B lB 2M 256K X 8/128K x 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70A90

PL 2305H

Abstract: MC1110
Contextual Info: TO SH IB A TMP95CU54A CMOS 16-Bit Microcontrollers TMP95CU54AF 1. Outline and Features TMP95CU54A is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CU54A comes in a 100-pin flat package. Listed below are the features.

Contextual Info: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz

Contextual Info: MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 70/90ns Low power consumption - 40mA maximum active current@5MHz

diode MARKING CODE A9

Contextual Info: MBM29F200TC-55/-70/-90 MBM29F200BC-55/-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.