AM29F200B Search Results

known good die AMD

Contextual Info: SU PPLEM EN T Am29F200B Known Good Die AMDH 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% fo r read and w rite o perations — Minimizes system level power requirements

Contextual Info: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Macronix

Abstract: architecture in 4289 MX29F400C Macronix International am29f400b 2257h
Contextual Info: APPLICATION NOTE Migrating to the Macronix MX29F200C & MX29F400C Flash Families from Spansion Am29F200B & Am29F400B Memory Devices. Contents Introduction. 2

AM29F200

Abstract: AMD VID
Contextual Info: SUPPLEMENT Am29F200B Data Sheet Supplement for PROM Programmer Manufacturers This supplement is for use with the Am29F200B data sheet, document number 21526. This document describes the sector protection and sector unprotection functions on the Am29F200B device.

AM29F200BB support

Abstract: AM29F200BB-45 AM29F200BT-45
Contextual Info: Am29F200B Data Sheet Am29F200B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

AM29F200BB-90

Abstract: AM29F200BT-90
Contextual Info: SUPPLEMENT Am29F200B Known Good Die 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

AM29F200BB-45

Abstract: AM29F200BT-45
Contextual Info: Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology

AM29F200BB support

Contextual Info: SUPPLEMENT Am29F200B Known Good Wafer 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory, Die Revision 1 Note: This supplement contains information on the Am29F200B in Known Good Wafer form. Refer to the Am29F200B standard datasheet (publication 21526) for full electrical specifications.

Contextual Info: SUPPLEMENT Am29F200B Known Good Die 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: Am29F200B Data Sheet Am29F200B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

Contextual Info: AM DH 5.0 Am29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

29F200

Abstract: 29F200 amd 29F200T
Contextual Info: a P R E L IM IN A R Y Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ — M inimizes system level power requirements

29F200B

Contextual Info: PRELIM INARY A M D * Am29F200B 2 Megabit 256 K x 8-B it/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V + 1 0 % for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

AM29F200BB support

Abstract: AM29F200BB-90 AM29F200BT-90
Contextual Info: Am29F200B Known Good Die Data Sheet Am29F200B Known Good Die Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

Contextual Info: AMDZ1 PRELIMINARY Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

am29f200

Abstract: am29f
Contextual Info: FINAL Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

AM29F200BB-50

Abstract: TS048 AM29F200BB support AM29F200BB-45 AM29F200BT-45
Contextual Info: Am29F200B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

29f200b

Abstract: 0032M AM29 FLASH SO044
Contextual Info: PRELIM INARY Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements

Contextual Info: Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology

AM29F200BB

Abstract: AM29F200BB-55 AM29F200BT-55 AM29F200BT-90
Contextual Info: Am29F200B Known Good Wafer Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

AM29F200BB support

Abstract: AM29F200BB-120 AM29F200BB-90 AM29F200BT-90
Contextual Info: Am29F200B Known Good Die Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: FIN A L Am29F200T/Am29F200B AtlvaM n“ o 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: AMDH Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

CS39S

Contextual Info: SUPPLEMENT Am29F200B Known Good Die 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements