12A17 Search Results

flame arrestor

Abstract: unigy LUCENT LINEAGE 12A170FT lineage
Contextual Info: UnigyI 12A170FT Battery Packing More Power and Efficiency into Small Spaces • Front access design for easy installation and maintenance • Space saving Absorbed Glass Mat AGM construction (48 volt system fits in 23” racks) • Individual plate formation optimizes cell voltage

Contextual Info: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

L7251-3.1

Abstract: L6284-3.1 AL133-00015.1 MPC4C2.1 th2167.1 DSTH506010.1 PEF3304EV2.1 AU1329.1 A612826.1 PMB6256-V1.1
Contextual Info: 1 Datasheet D 2DFDD D 7!F D"#$FD 8F7 8%995&'7"D 1 1 %DC78C4E91 E59133AA14A38C4E119AA713A74EC8C4E1 1 CE1731EC8C4E1998AF91 24382DA15AC7A91967191F42CDA14EA9#1 9F384EA9#1A59A8#1431FA1F7CEA91

Marking AFU

Abstract: LH28F400BVHE-BL85 LHF40V13
Contextual Info: P i# m i Site matidns LH28F400BVHE-BL85 4M Flash Memory Model No.: LHF40V13 Spec No.: EL106160 Issue Date: August 3,1998 SHARP LHF40V13 •H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, o f this material is prohibited without the express written

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES I • • • • • • • • • • • • Organization . . . 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

M29W400B

Abstract: M29W400 M29W400T
Contextual Info: M 29W 400T M 29W 400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10 |iS by Byte / 1 6|os by Word typical

MSP55lv512

Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
Contextual Info: ＡＦ９８４５／４５Ｂ／４５Ｃ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９８４５ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｂ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｃ ＧＡＮＧ ＵＮＩＴ Ｆｌａｓｈ Ｓｕｐｐｏｒｔ Ｇｒｏｕｐ，Ｉｎｃ．

Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: M29W400T M29W400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

MSP14LV160

Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
Contextual Info: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ

BO29

Abstract: CAT29F002B 20RIS 23/3C000H
Contextual Info: J CAT29F002 Advance Information Advance Information CAT29F002 2 Megabit C M O S 5V Only Sector Flash Memory FEA TU RES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: End of W rite Detection

12A17

Contextual Info: S G S -T H O M S O N m “7 # . liSIBI!«ISIU llSiE3[<IIIBS »W 4M T M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME

Contextual Info: M29F400T M29F400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F002T

Abstract: PDIP32 PLCC32
Contextual Info: w - SCS-THOMSON k7 # . IM [MDiHI ènnMPM]D(§Ii M 29F002T 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)