29F002T Search Results

M29F002

Abstract: M29F002B M29F002T PDIP32 PLCC32 TSOP32 HFNC
Contextual Info: W # S C S -T H O M S O N k7 # . MiniamigmaainsiiaMnfBg M 29F002T M29F002B 2 Mb x8, Block Erase SIN G LE SUPPLY FLASH M EM O RY • 5V ± 1 0 % SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME: 1 0 |iS typical

1N914

Abstract: M29F002T PDIP32 PLCC32
Contextual Info: w , SGS-THOMSON k7 #» RitlDÊlMIlilLIKËinSMQtÊS M 29F002T 2 Mb 256K x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical

1N914

Abstract: M29F002T PDIP32 PLCC32
Contextual Info: w , SGS-THOMSON M 29F002T k7 #» RitlDÊlMIlilLIKËinSMQtÊS 2 Mb 256K x 8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical

M29F002T

Abstract: PDIP32 PLCC32
Contextual Info: w - SCS-THOMSON k7 # . IM [MDiHI ènnMPM]D(§Ii M 29F002T 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29f002tc

Contextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT 29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

29F002T

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

A1317

Abstract: AS29 120PI
Contextual Info: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

P55i

Contextual Info: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and

Contextual Info: — 29F002T/Am29F002B AM D il 2 Megabit 262,144 x 8-Bit CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system-level power requirements ■ Compatible with JEDEC-standard commands

Contextual Info: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations

fujitsu 29LV160B

Abstract: 29F800B 29LV160B 29F160B m29f800bb
Contextual Info: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright  1995.2002:

ym 238

Abstract: hy 214 29F002
Contextual Info: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current

FPT-32P-M24

Abstract: F002B
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20868-3E FLASH MEMORY CMOS 2M 256K x 8 BIT M B M 2 9 F 0 0 2 T C -5 5 -7 0 -9 0 /M B M 2 9 F 0 0 2 B C -5 5 .-7 0 -9 0 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase

HY29F002

Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
Contextual Info: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current

MX29F022T

Contextual Info: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: INDEX NEW ADVANCED INFORMATION MX29F002/ MX29F002N 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 70/90/120ns • Low power consumption – 30mA maximum active current – 1µA typical standby current • Programming and erasing voltage 5V ± 10%

Contextual Info: 29F002T, TMS29F002B 262144 BY 8-BIT FLASH MEMORIES • • • • • • |_^ ^ _ Single Power Supply Supports 5-V ±10% Read/Write Operation O rganization:. 262144B y8 Bits Array-Blocking Architecture - One 16K-Byte Protected-Boot Sector

Contextual Info: W # SG S-TH O M SO N k7#1 KiflD gl^ [l[Ul Tr[S®SfflDtes 29F002T M29F002B 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME: 10|os typical

29F002N

Contextual Info: PRELIMINARY AM D i i Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations

Contextual Info: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t