LH531 Search Results

40-pin EPROM pinout

Abstract: 44-PIN LH531024 QFJ044-P-S650 C1161
Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K × 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) VCC NC 1 40 CE 2 39 NC

IC 2030 PIN CONNECTIONS

Contextual Info: LH531VOO FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K x 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P VIEW s O E ^ Ö li/ D C C • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)

40-pin EPROM pinout

Abstract: ta 1275 az
Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TO P VIEW • Access time: 100 ns (MAX.) / NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 |j.W (MAX.)

sharp lh53

Abstract: sharp lh53 1M
Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

42-PIN

Abstract: 44-PIN
Contextual Info: CMOS 16M 2M x 8/1M × 16 Mask-Programmable ROM LH5316500C FEATURES • 2,097,152 words × 8 bit organization (Byte mode) 1,048,576 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

a9231

Abstract: LH531V00 32DIP 32-PIN lh531
Contextual Info: LH531V00 FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K × 8) Mask-Programmable ROM PIN CONNECTIONS TOP VIEW 32-PIN DIP 32-PIN SOP OE1/OE1/DC 1 32 VCC A16 2 31 NC A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8

sharp mask rom

Abstract: LH53820 LH5322 lh5384
Contextual Info: SHARP CORP bGE D • 000^435 40 e! f l l f l ü ? » S R P J T - H é - o - jS SHARP LH5316400D ■ M Description The LH5316400D is a 16M bit CMOS mask ROM organized as 2,0 97 ,1 5 2 x8 bits. It is packaged in 36-pin DIP which provides mask ROM specific pinout compatible with 28-pin 1 M mask ROM.

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

Contextual Info: LH531V00 FEATURES • 131,072 words x 8 bit organization CMOS 1M 128K x 8 MROM PIN CONNECTIONS TOP VIEW 32-PIN DIP 32-PIN SOP • Access time: 100 ns (MAX.) / A16^ 1• 2 \ 32 □ Vcc 31 □ NC A ì5 Z 3 30 □ nc A 12 C 4 29 □ a OE-i/ÔË-i /DC Z • Power consumption:

531024

Abstract: 40-pin EPROM pinout
Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization C M O S 1M 64K x 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) s NC • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 jiW (MAX.) CË • Static operation

Contextual Info: PRIORITY CM O S 1M 128K X 8 Mask-Programmable ROM FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550jiW(MAX.) DESCRIPTION The LH531000B is a mask-programmable ROM

531000B

Abstract: 531000
Contextual Info: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:

lh531

Abstract: LH531000B LH531000BN-S LH531000B-S
Contextual Info: L H ^ I n n O R l v / V * v u v - C ^ CMOS 1M 128K x 8 w _ 3 V-D rive M a sk-P ro g ram m a ble ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using

LH531000B

Abstract: LH531000BN-S LH531000B-S
Contextual Info: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)

sharp mask rom

Abstract: DIP028-P-0600
Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) The LH531000B is a m ask-program mable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

LH531000B

Abstract: LH531000BN-S LH531000B-S
Contextual Info: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.

Contextual Info: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:

mrom

Abstract: LH531000B
Contextual Info: LH531000B CMOS 1M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

44-PIN

Abstract: LH5316P00B
Contextual Info: LH5316P00B FEATURES • 2,097,152 x 8 bit organization Byte mode: BYTE = VIL 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) CMOS 16M (2M × 8/1M × 16) MROM PIN CONNECTIONS 44-PIN SOP TOP VIEW NC 1 44 NC A18 2 43 A19 A17 3 42 A8 A7 4 41 A9 • Supply current:

431 capacitor NCC

Contextual Info: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)

32DIP

Abstract: 32-PIN LH531V00
Contextual Info: LH531V00 FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K × 8) MROM PIN CONNECTIONS TOP VIEW 32-PIN DIP 32-PIN SOP OE1/OE1/DC 1 32 VCC A16 2 31 NC A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8

LH531000B

Contextual Info: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 MROM PIN CONNECTIONS 4 0 -P IN D IP T O P V IE W 4 0 -P IN S O P • Access time: 100 ns (MAX.) - S NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 (iW (MAX.)