LH53259 Search Results

A14C

Abstract: LH53259 sharp mask rom
Contextual Info: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

LH53259

Abstract: LH53259D TSOP028-P-0813
Contextual Info: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) CMOS 256K (32K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC 1 28 VCC A12 2

48 tsop flash pinout

Abstract: LH23512
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)

Contextual Info: LH53259 C M O S 256K 32K x 8 M ask-Program m able ROM PIN CONNECTIONS FEATURES • 32 ,768 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: Operating: 110 m W (M AX.) Standby: 8 2.5 (M AX.) • Programmable output enable •

Contextual Info: LH53259 C M O S 256K 3 2 K x 8 M ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization 28-PIN DIP 28-PIN SOP • Access time: 150 ns (MAX.) TOP VIEW . • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 p.W (MAX.) NCd 1• 28 □ VCC

TSOP028-P-0813

Abstract: LH53259 LH53259D
Contextual Info: LH53259 CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC

Contextual Info: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) CMOS 2 56K (3 2 K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP s • Programmable output enable • Static operation

Contextual Info: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. CMOS 256K (32K x 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 (iW (MAX.) A 12IZ • Static operation

QFP44-P-1010

Contextual Info: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 3 2 ,7 6 8 • Access time: 150 ns (M AX.) • Low-power consumption: x 8 bit organization Operating: 110 m W (M AX.) Standby: 8 2 .5 |iW (M AX.) • Programmable output enable • Static operation (Internal sync, system)

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

LQ070T5BG01

Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Contextual Info: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

Contextual Info: CMOS 256K 32K x 8 Mask-Programmable ROM FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS TO P VIEW 28-PIN DIP 28-PIN SOP f • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 |iW (MAX.) • Programmable output enable

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

Contextual Info: CMOS 256K 32K x 8 Mask-Program m able ROM FEATURES • 32,768 x 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 28-PIN DIP 28-PIN SOP TOP VIEW S NCC • Low-power consumption: Operating: 110 mW (MAX.) Standby: 82.5 (MAX.) • Programmable output enable

IR2E27A

Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Contextual Info: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080

lh5s4

Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
Contextual Info: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8