531000B Search Results

531030

Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
Contextual Info: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C

02CM

Contextual Info: ROMs M a sk RO M s 1-M eg M a s k R O M s Part Number Configuration P ins/Package M SM 531020B 128K x 8 2 8 / DIP | M SM 531000B 128K x 8 2 8 / D IP 100 5.0 V M SM 5 3 1 0 3 0 B 128K x 8 2 8 / D IP 150 3.3 V 5.0 V 1 A ccess Tima M a x ns Voltage 70 5.0 V

sharp mask rom

Contextual Info: CMOS 1 M 128 K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B is a m ask-program m able ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:

sharp mask rom 44-pin

Abstract: 1417D lh53
Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The 531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)

Contextual Info: 531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

sharp mask rom 44-pin

Abstract: sharp mask rom LH53 DIP28-P-600 L3433
Contextual Info: S HARP CORP 531000B L IE 131,072 x 8 bit organization • Access time: 150 ns MAX. • Low power consumption: Operating: 192.5 mW (MAX.) û lfl07T fl CMOS 1M (128K FEATURES • D x DGDT ÛS M Tb4 ISRPJ 8) Mask-Programmable ROM DESCRIPTION The 531000B is a mask-programmable ROM

Contextual Info: 531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The 531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)