550JIW Search Results

Contextual Info: PRIORITY CM O S 1M 128K X 8 Mask-Programmable ROM FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550jiW(MAX.) DESCRIPTION The LH531000B is a mask-programmable ROM

Contextual Info: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply

PJ 0416 1v

Abstract: til 3010 1208FRAM 7S5SG15
Contextual Info: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric

MBm27C512-25-X

Contextual Info: 1993 February 1990 Edition 2.0 FUJITSU DATA SHEET MBM27C5 1 2 -25-x CMOS 512 K-BIT UV EPROM CMOS 524,288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C512 is a high speed 524,288 bit static CMOS erasable and electrically

MS6264A-35NC

Contextual Info: MOSEL- VITELIC MS6264A 8K x 8 HIGH SPEED CMOS STATIC RAM Features Description m High-speed- 15/20/25/35 ns The MS6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates from a single 5 volt supply. All inputs and three-state