L50V Search Results

Contextual Info: ISI 3584 3584 OPERATIONAL AMPLIFIERS High Voltage OPERATIONAL AMPLIFIER FEATURES • • • • . • TYPICAL GAIN-BANDWIDTH, 50MHz OUTPUT, +145V PROTECTED OUTPUT, automatic thermal shutoff BIAS CURRENT. 20pA CMR, H O dB SLEW RATE, l50V//i$ APPLICATIONS .

2SC3257

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE SW ITCH IN G REGULATOR A N D HIGH VOLTAG E SW ITCHIN G APPLICATIONS. 2SC3257 INDUSTRIAL APPLICATIONS Unit in mm 1 0 .3 M A X . HIGH SPEED D C-DC CO NVERTER APPLICATIONS. • • Excellent Switching Times : tr = 1.0/is Max. , tf=1.0/us (Max.) at Iç = 6A

2SK707

Abstract: P07E2 18896 PVS100 SK707 6M60 nec 13A
Contextual Info: 6427525 N E C ELECTRONICS INC N E C ELECTRONICS INC : fy bÿÿâÿ lK MO S F.IELD E F F E C T , T R A N S I ST 1 / FAST SWITCHING N-CHANNEL SILICON POWER M A X ., • 1 2 ± 0.2 * ,— A FET Features •«Suitable for switching power supplies, DC-DC converters and pulse c irc u its

B10K

Abstract: BS5456
Contextual Info: WATT/VAR S 3 -W R D / mzw •MS±o m ■-nvnw'fommAth ■ufinibal|^ tj !*teA S3-YVRD-1 %x?m : 5 3 WRD-3 S3-W RD-3A JSiAiS mmt> nov'ioovi 0-0.5KW 2i0V|2iOVJ OMK Vi novuoovi O-^IKW 5A 220VI240V] 0-2K W ^iiovt^aovj 0^1.5K W -HatL4Sii 5A A'220V fRf240V) 0- 3KW

Contextual Info: .o«o»o»o»o»o»o A VAVA1xoxoxoxoxoxoxoxoxoxox •>xoxo: ¿xoxoxoxoxoxoxoxoxoxc CS-510 Multi-Feature, Synchronous plus Auxiliary PWM Controller Features Description The CS-5106 is a fixed frequency, current mode controller with one single NFET driver and one dual

TUBE 6j1

Abstract: 6j1 tube 6C33C 6h2n 6H7C 6h6n tube 6H13C 6H9C 6H16B 6c21
Contextual Info: IPHEMHO-yCHJlHTEJlbHblE JlAMflbl RECEIVING TUBES d B/O „MAUinPMBOPHHTOPr“ CCCP MOCKBA n P M E M H O -y c M n m E n b H b iE JlAMnbl RECEIVIN G TUBES K h u to 2 Book 2 B/O „ M A L iin P M B O P M H T O P r“ CCCP MOCKBA V/O “M A S H P R IB O R IN T O R G ”

macbook pro 13

Abstract: mb166 ASUS eee PC 900 dell d630 toshiba 8893 macbook AMD turion 64 X2 ASUS X50Z compaq 510 ACER Aspire JDW50
Contextual Info: Acer Acer Acer Acer Aspire 5230 JAWD0 Aspire 5410T (MS2272) Aspire 5410TZ (MS2272) Aspire 5520 series (ICW50) 13.71 7.27 7.27 10.16 1.34 1.38 1.38 1.44 Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Aspire 5635 (ZR6) Aspire 5710 series (JDW50)

2SK707

Abstract: FC33 PVS100 mos 4511 6M60 f0r1a
Contextual Info: _ 6427525 N E C n e c ELECTRONICS El e c t r o n i c s : 'f V INC_ 98D ^ in c C¡jÍ$Ñf f K de| MOS 18893 luevsss F .1 E L D G D iö fiT a 4 1 2 ± 0.2 1 0 ± 0.5 m • A MOS TRANS I STC FET Features • «S uitable f o r switching power s u p p lie s ,

Contextual Info: R B L , R P L Aluminum Electrolytic Capacitors For Audio Series RBL, RPL RBN (LZ , (RPBN (LZ) for Speaker Network • • • Equivalent series resistance 1/2-1/3 of that of a conventional capacitor. All lead wires are oxygen-free copper for extremely low distortion (Third high frequency distortion: 10kHz, 0.1A,-120dB or less).

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

ufnf220

Contextual Info: POWER MOSFET TRANSISTORS UFNF220 2 0 0 Volt, 0.8 Ohm N-Channel UFNF222 UFNF223 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low FWoni and a high transconductance.

MG50D2DM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG50D2DM1 HIGH POWER SWITCHING APPLICATIONS. Uni t in mo MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO f/aììuha TT DE I TOTVSSO QQlbñbt. 99D 16866 D T -3 = M TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 2 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Ti-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: L Large Capacitance Aluminum Electrolytic Capacitors O utline D raw ing Series L Standard Capacitors P hoto Unit: mm S p ecificatio n s No. Perform ance item —40 to +85 -25 to +85 at 250 V or more 1 Temperature range (°C) 2 Leakage current 3 Capacitance tolerance (%)