250GA Search Results

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS

G4PC30F

Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
Contextual Info: International TOR Rectifier PD - 9.1459A PRELIMIN IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: O ptim ized fo r m edium operating frequencies 1-5 kHz in hard sw itching, >20 kH z in resonant m ode . • G eneration 4 IG BT design provides tig hte r

Contextual Info: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel

Contextual Info: International I R Rectifier pd-9.m65a IRG4 PC4 0 S PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

smd diode marking 47s

Abstract: S41 rectifier smd marking 47s smd code marking sot23 Micro6 Package smd diode marking JJ sot23 G0A marking SMD MOSFET N Z4 lm 5532
Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6702 PRELIMINARY H EXFET Pow er M O S F E T • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • P-Channel MOSFET V q ss = -2 0 V R DS(on) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

F0041

Abstract: IRF7314
Contextual Info: International IGR Rectifier PD - 9.1436A IRF7314 PRELIMINARY HEXFET Power M O SFET • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V DSS = -20V ^DS on = 0.0580 Description Fifth Generation HEXFETsfrom international Rectifier

IRG4PC40S

Contextual Info: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: 4ASS4S2 0D14b6b ATS « I N R International E5R Rectifier HEXFET Power MOSFET • • • • • • • PD-9.899 IRF610S INTERNATIONAL R E C T IF IE R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avaianche Rated Fast Switching

switching TRANSISTOR mosfet 30V 40A

Abstract: IRGB440U
Contextual Info: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e

ld33a

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D • ^0^7230 0017^72 □ MTOSLJ TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (ir - YTFP153 MOSI) ! INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

Contextual Info: TOSHIBA {DISCRETE/OPTO} TÎ 9097250 TOSHIBA DISCRETE/OPTO DE | T m 7 2 S D 99D 16896 T O S H IB A SEMICONDUCTOR F IE L D EFFEC T D ~p- 3 e)-1 T R A N S IS T O R Y T F 8 3 2 S IL IC O N TECHNICAL DATA N C H A N N EL MOS T Y P E (Æ -M O S IE ) INDUSTRIAL APPLICATIONS

Contextual Info: International Rectifier HEXFET Power MOSFET • • • • • • 4A 5545E DOlMbOA 3 0 2 H I N R PD-9.615A IRCZ24 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: PD - 9.1448B International I R Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 9.1240C International IGR Rectifier IRF7304 HEXFEf Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Voss = -20V

1RF7309

Abstract: 1rf730 AN-994 IRF7309 making cys
Contextual Info: International S Rectifier P D - 9 .1 2 4 3 B IRF7309 PRELIMINARY H E X F E T Pow er M O S F E T i • • • • • • • Generation V Technology Ultra Low O n-R esistance Dual N and P Channel Mosfet Surface Mount Available in T a p e & Reel Dynam ic dv/dt Rating

I628

Contextual Info: International IOR Rectifier IN S U LA TE D GATE pd-9.i628 IRG4PC30W PRELIMINARY BIPOLAR TR AN SISTO R Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

IRF7319

Abstract: 49AA
Contextual Info: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch

rr180

Abstract: 75337 75337S 75337P
Contextual Info: in te rrii HUF75337G3, HUF75337P3, HUF75337S3S J u n e 1999 D a ta S h e e t 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

F1G21

Abstract: IRF7317
Contextual Info: International IOR Rectifier P D -9.1568 IRF7317 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1413C International Iö R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • G eneration V Technology • • • Microô Package Style Ultra Low Rds on P -C hannel M O S F E T Voss = -30V ^D S (o n) = Description 0.20Q Fifth Generation HEXFETsfrom International Rectifier

design ideas

Abstract: Signal Path Designer
Contextual Info: Hierarchical Design Techniques Vijay Gullapalli–Senior Design Consultant, Synopsys Professional Services Kaijian Shi–Principal Consultant, Synopsys Professional Services January 2004 2004 Synopsys, Inc. Hierarchical design flow offers many benefits that can result in improved productivity when designing

Contextual Info: TOSHIBA {DI SCRE TE /O PT O} Ti D eT | TCn7eS0 OOlböVM 99D 16874 9097250 TOSHIBA DISCRETE/OPTO TO SH IBA “^/oòfulu SEMICONDUCTOR F IE L D DT-SR-ll E F F E C T TRA N SISTO R Y T F 6 3 3 S IL IC O N « TECHNICAL DATA CHANNEL MOS TYPE (Z T -M O S I) INDUSTRIAL APPLICATIONS