F0R1A Search Results

Contextual Info: 6427525 N E C ELECTRONICS tiME75E!5 O G l f i W INC 9ÔD 18989 D -f- 3 ? W 3 1 |~ -••\.vs't.¿V-.-s:>•■*. V i r - v ,.-'•; - ? % § < , & V-ïÿ' ELECTRON DEVICE M O S " F I E L D ' 'E F F E~C T " T R Ä N S I S T 0 ?.~ /' • 2 S K F A S T

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Abstract: 2SJ137 2SJ13
Contextual Info: N E C ELECTRONICS INC Tfl DE|L457SBS GDnGSl PRELIMINARY SFEClFiCAT.C'MOS FIELD EFFECT T RAN' S I S T C: 2S J 137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIM EN SIO N S Features Unit : mm Suitable for switching power supplies, actuator controls and pulse circuits

k 3919

Abstract: CI047 f0r1a F0R1
Contextual Info: 6427525 N E C N EC ELECTRONICS 98D INC 19047 T" 39 W D ~Tfl I ¥ l b 427 SHS 0 D l ci 047 1 ' J r _ PR EL IM IN AR Y SrECiFiCATIC' >rEC ELECTRONICS INC MOS FIELD I RAN 'S 1S T . EFFECT ELECTRON DEVICE S 2 FAST SWITCHING P - C H A X X E L S I L I C O N POWER

2SJ13

Abstract: for1a
Contextual Info: 6 4 2 7 525 N E C N E C D 98D 19055 EL EC TRO NIC S INC ELEC TRO NIC S INC 1C DET|hM27S55 ODITGSS f- K t- L - lIV lIIN M « T MOS FIELD EFFECT A Jr- ¡CAT ¡C O r - il^ T r T R A N S I ST ELECTRON DEVICE _ 2 FAST SWITCHING

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Abstract: eic73 2SK821
Contextual Info: 64 27 525 N E C ELEC TRO NIC S INC 98D 18989 3 tiME7S2S □□IfiTflT 1 |"“ ••. . .,.r NEQm ' w ELECTRON DEVICE MO S y FIEL D P A C K A G E D IM E N S IO N S {Unit: mm _ _ _ _ _ _ " Jl T R A N S I S T G ?. 2SK821 / FAST S W IT C H IN G ft-CHANNEL

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Abstract: 2SJ133 6C Y TCH C111
Contextual Info: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D I NC Tû MO § D 'f-'lf-J? 19035 DE | b MS T S S S FIELD 00nD3S EFFECT 2 S FAST SWITCHING P - C H A N N E L S I L I C O N P O WE R MÓS S T R A N S I S T C?. J 1 3 3 FET Features p a c k a g e dimensions

k 3919

Abstract: f0r1a for1a 2SJ140 10C00 NEC 9801
Contextual Info: N E C ELECTRONICS _ 98D >9063 E C ELECTRONICS INC m D T - it- 4 DE|fc,M27SS5 D 0 n 0 b 3 ? | INC P R E LIM IN A R Y SPEC IFiC A TiC .*. MOS e FIELD E F F E C T T R A N ' S I ST-'. ELECTRON DEVICE 2 FAST S W I T C H I N G P - C H A N N E L S I L I C O N

D 739

Contextual Info: N E C ELEC T RO N IC S INC ~Tfl »F|t4E7SaS □ 03.'TO43 1 J ~ T ~ 3 ? ^ / ? PR E LIM IN A R Y S P E C I F I C A T A - MOS FIELD EFFECT TRAXSiSTC ELECTRON DEVICE FAST SWITCHING P —C H A N N E L S IL IC O N POWER PACKAGE DIMENSIONS Suitable for switching power supplies,

Contextual Info: N E C ELECTRONICS INC "tö deT| b 4 a ?5 E S oonoTs 3 | ~ 7 ^—3 ^^-1 <J P R E L IM IN A R Y S P E C IF IC A T A ‘ MOS FIELD EFFECT ELECTRON DEVICE TRANSIS 2 S J 143 FAST SWITCHING P - C HAN NE L SILICON POWER PACKAGE DIMENSIONS MOS FET Features . Su itab le fo r switching power supplies,

Contextual Info: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D D E |b M E 7 S 5 S INC MOÇ D X ^ 1 f -/? 19035 FIELD OOITDBS EFFECT E TRANS I STC = ELECTRON DEVICE 's FAST SWITCHING P-CHANNEL S IL IC O N POWER 3 , I ill 0.6 = 0.1 Absolute Maximum Ratings Ta=25*C Drain t o Source Voltage

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Abstract: 2SJ142 nec 251c 251c nec PGTL 251C f0r1a
Contextual Info: 6427525 N E C N E C ELECTRONICS I N C _ 9 8 D ELEC TRO NIC S INC Tfl 1 9 0 71 D T — S q — i* DE | b427555 GGIIG?! h h r e u m i i n a k y MOS FIELD EFFECT a i - t t i f l u A T i C i T RAN’ S I S T o : 2 S J 142 FAST SWITCHING P - C H A N N E L S I L I C O N POWER

Contextual Info: 6427525 N E C N E C E L E C T R O N IC S ELECTRONICS 98D IN C Tfl INC M O S o 19055 ic D E | h M 2 77 SS5S 55 O a DoInTaG sS sS A f-KtL-iiviiiNM« T artiTr ¡CATiC Jr- ¡ C F I E L D E F F E C T T R A a S!ST ELECTRON DEVICE ._2 S F A S T

k 3919

Abstract: 2SJ137
Contextual Info: N E C ELECTRONICS INC ' Tfi DE j b 4 S 7 S B S O D n D S l □ | ~ T ^ P RELIMINARY SFEClFiCAT.C MOS FIELD EFFECT TRAXSISTC: 2SJ137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIMENSIONS Features U nit : m m Suitable for switching power supplies,

k 3919

Contextual Info: E C ELE CT RO NI CS I N C T 64 275 25 N E C ELE CTR ON IC S INC f l d F | l 4 2 7 S 2 S DDl^DL? 4 f 98D 19067 D -f-' 3 PRELIMINARY SPECiFiCATiC'- P - C HANNEL SILICON PACKAGE DIM ENSIONS POWER MOS FET Features Suitable for switching power supplies, actuator controls and pulse circuits

k 3919

Abstract: 2SJ141 tonyo for1a
Contextual Info: E C E LEC T R O N IC S 6427525 N E C IN C Tfl E LE C T R O N IC S IN C 1> F | l 4 S 7 5 S S 98D 19067 D D l^ D L ? D 4 'f - '5 PR E L IM IN A R Y S P E C iF iC A 7 !C ‘- P — C H A K r NTE L S IL IC O N PACKAGE DIM ENSIO N S POWER MOS FET Features Suitable for switching power supplies,

6CW 60

Abstract: 6CW 43 6cw 50 lti 1302 CJRB g98d
Contextual Info: N E C ELECTRONICS INC ~Tfl ì F |b U 5 7 5 2 S O D IA IS _ MOS 3 |~ , T • '3 e) ' - t[_ FIELD EFFECT TRAXS1ST' ELECTRON DEVICE 10 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features S u ita b le fo r switching power supplies, actuator controls and pulse c ir c u it s

k 3919

Contextual Info: N E C E L E C T R ON I C S INC 98D >9063 D 'T DE I b4H7SSS D O n O b B 7 | P R E L IM IN A R Y SP EC IFiC ATiC .* . NEC E C ELECT RO NI CS INC MO S F I E L D E F F E C T T R A N ' S I ST-' . ELECTRON DEVICE .

2SJ136

Abstract: ID4C
Contextual Info: 6427525 N E C N E C ELECTRON ICS 98D INC ~Tñ ELECTRONI CS I NC 19047 D T~ J 9 - /f I F | b 4 2 7 S H S D D l ciD47 I jT PRELIMINARY S r E C i F i C A ' MOS JLj FIELD EFFECT IRAN' S 1S T - ELECTRON DEVICE _ 2 S FAST SWITCHING P-CHAXXEL