L322 Search Results

L324

Abstract: ICL3232 ICL3221 ICL3222 ICL3223 ICL3241 ICL3243 L322 L323 icl3232cp
Contextual Info: L3221, L3222, L3223, ICL3232, ICL3241, ICL3243 TM Data Sheet September 2001 1 Microamp Supply-Current, +3V to +5.5V, 250kbps, RS-232 Transmitters/Receivers itle L322 L322 L322 L323 L324 L324 bt 1 crop pplyrt, V to .5V, 0kbps S2 nsts/Rec ers uthor eyrds

Contextual Info: PRELIMINARY DATA SHEET VISIBLE LASER DIODE L3220, L3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and

pinout battery laptop

Abstract: AN9863 ICL3310 L322 MAX222 SP310A
Contextual Info: CT RODU P UCT E T E L PROD E T OBSO U IT BST LE S U L322 2 OSSIB IC P Data Sheet ICL3310 July 2004 FN4995.3 +3V to +5.5V, 1 Microamp, 250kbps, RS-232 Transmitter/Receiver Features The Intersil ICL3310 contains 3.0V to 5.5V powered RS-232 transmitters/receivers which meet ElA/TIA-232 and

Contextual Info: ^EDI L32256V 256Kx32 Synchronous Pipeline Burst SRAM ELECTRONIC DESIGNS, INC Features TMS320C6x External SBSRAM Memory Solution DSP Memory Solution The E D I2D L32256VxxB C is a 3.3V, 256K x32 S ynchro­ • nous Pipeline B urstS R A M constructed with tw o 256Kx16

Contextual Info: ^EDI L32256V 256Kx32 Synchronous Pipeline Burst SRAM ELECTRONIC DESIGNS, INC TMS320C6x External SBSRAM Features Mem ory Solution The ED I2D L32256VxxB C is a 3.3V, 256Kx32 S ynchro­ DSP Memory Solution • nous Pipeline B urst SRAM constructed with tw o 256K x16

b16 zener

Abstract: zener diode c5 C61NF transistor Z2 zener c2 10KPOT 20pf B16 diode C710 zener z2
Contextual Info: RFin C1 7.5PF 1 3 turns C2 20PF L1 22AWG 2 C31NF 3 Gendiode R6 10K 10KPot 1/2turn L2 22AWG 16 14 Zener Gendiode 15 4 8 12 L2821 R1180 5 9 22ohm 1/2W R43.9K 7 6 C61NF 4/10/01 C5 9.1PF 1/2turn L322AWG 22AWG 12turns C710NF 850mu terroid C847UF,25V C4 10NF 11

M3202

Abstract: M3221 M3206 H3205 L3231 M3233 M3243 H3202 H3206 m3201
Contextual Info: FULL SIZE D.I.L. M3201 thru M3207 L3201 thru L3207 M3221 thru M3223 L3221 thru L3223 M3231 thru M3233 L3231 thru L3233 M3241 thru M3243 L3241 thru L3243 VOLTAGE CONTROLLED OSCILLATORS HCMOS, 0° TO 70°C HALF SIZE D.I.L. H3201 H3221 H3231 H3241 Tristate VCXOs

QTH-030-01-L-D-A

Abstract: L322 GR-253 OC48 V23816-N1018-C322 V23816-N1018-L322 LVDS connector 20 pins QTH-030-01
Contextual Info: V23816-N1018-C322/L322 * 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Intermediate Reach (IR-1) up to 15 km Preliminary Dimensions in mm [inches] V23816-N1018-L322 • • • • • • Laser bias monitor RX power monitor output Loopback operating modes

QTH-030-01-L-D-A

Contextual Info: Fiber Optics 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Intermediate Reach IR-1 up to 15 km V23816-N1018-C322 V23816-N1018-L322 Preliminary Data Features • Compliant with existing standards • Compact integrated transponder unit with

Contextual Info: V23816-N1018-C322/L322 * 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Intermediate Reach (IR-1) up to 15 km Preliminary Dimensions in mm [inches] V23816-N1018-L322 • • • • • • Laser bias monitor RX power monitor output Loopback operating modes

NS 12575T 6R8MN

Abstract: hioki 3200 hp 4192a nrs8030 NRS4018 NRV2012T NRS4018T220MDGJ 470MN NRS5024T4R7MMGJ NS 12565T 680MN
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

K4H560838E

Abstract: DDR333
Contextual Info: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003

NL252018T-101J

Abstract: NL322522T-100J NLC1812-180K NLC322522T-4R7M NL1812 NLC1210-470K NL252018T-R33J NLF453232T-101K NL252018T-027J nl252018t-047j
Contextual Info: INDUCTORS Leadless NL SERIES INDUCTORS These revolutionary, high reliability leadless w o u n d ch ip inductors have been developed in response to the tren d to w a rd higher density mounting o f p a r ts in electronic circuits. Since m etal term inals a re u sed a s the electrodes and the body is m olded o f h eat resistan t resin,

NL252018T-R56D

Abstract: NLF453232 16085A 1roJ NL252018T-5R6J-N NL322522T NL322522T-100J 4276A NLF453232T-221K L322522T
Contextual Info: Leadless Inductors NL and NLF Magnetic Shielded Series These revolutionary, highly reliable wire wound chip inductors for automatic mounting have been developed in response to the trend toward high density in electronic equipment. With metal terminals and a body of heat resistant resin, these inductors offer many superior features.

sangamo

Abstract: 016C P711U E152U Sangamo 500 350G P422U Sangamo 066
Contextual Info: RADIAL LEADED CAPACITORS Ultra-Low Impedance High Frequency Grade, 105°C Type 350 Standard ♦+♦ COE SANGAMO+ 01 *0 - 3 2 ! With a solid aluminum top type 350 is the lowest inductance radial leaded type available. Its 4 to 6nH typical ESL provides self resonant frequencies usually

Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static R AM • Equal access and cycle times — Military: 1 5 /1 7 /2 0 /2 5 n s — Com m ercial: 1 2 /1 5 /1 7/20n s

BRC 1310

Abstract: LB2016 LB2518 LB3218 LBC2012 LBC2016 LBC2518 LBC3225 LBMF1608 LBR2518
Contextual Info: 当社製品に関するお断り 当社製品をご使用頂く際には事前に必ずお読み下さい。 注 意 • 当カタログの記載内容は2009年10月現在のものです。記載内容は改良などのために予告なく変更することがあります。従いま

LSI 9240

Abstract: WD1600JS 9690SA-414E 9590SE-4ME bbu 9500 installation ST3750640AS WD1600JS-22NCB1 3ware 9500s bbu installation 9650SE-4 3dm 5000
Contextual Info: Command Line Interface Version 10.0—Supports the 9750 and 9000 Series 9750, 9690SA, and 9650SE PN: 45413-00, Rev. A November 2009 CLI Guide 3ware SATA+SAS RAID Controller Card Document Description Document 45413-00, Rev. A. November 2009. This document will remain the official reference source for all revisions and

y 4m

Abstract: 641BL
Contextual Info: CM O S STATIC RAM 1 MEG 128K x 8-BIT IDT71024 FEATURES: DESCRIPTION: • 128K x 8 a d v a n ce d h ig h -s p e e d C M O S s ta tic R AM T h e ID T 7 1 0 2 4 is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d sta tic R AM o rg a n iz e d a s 128K x 8. It is fa b ric a te d u sing ID T ’s highp e rfo rm a n c e , h ig h -re lia b ility C M O S te c h n o lo g y. T h is sta teo f-th e -a rt te c h n o lo g y , c o m b in e d w ith in n o va tive c irc u it d esign

CHN 920

Abstract: 71024S15 chn 830
Contextual Info: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options

Contextual Info: 128MB, 265MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module DDR400 Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 October. 2004 Rev. 1.0 October. 2004 128MB, 265MB, 512MB Unbuffered DIMM

Contextual Info: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.0 April. 2003 Rev. 1.0 April. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003

Contextual Info: Order this data sheet by MCA2200ECL/D M O TO RO LA MCA2200ECL 1 SEMICONDUCTOR TECHNICAL DATA MCA2200ECL MACROCELL ARRAY The MCA2200ECL Array is a m em ber of M otorola's "T h ird G eneration” MCA3 ECL series. M otorola's MOSAIC III process provides the MCA2200ECL w ith the logic pow er of over 2200

Contextual Info: 256MB, 512MB, 1GB Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die x4, x8 with 1,700 / 1,200mil Height & 72-bit ECC Revision 0.0 Feb. 2003 Rev. 0.0 Feb. 2003 256MB, 512MB, 1GB Registered DIMM