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    L2F Search Results

    L2F Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 2CL2FL
    SUNMATE electronic Co., LTD High voltage rectifier diode 2CL2FL with 15 kV repetitive peak reverse voltage, 100 mA average output current, high surge resistance, and fast switching for CRT, laser, and voltage doubler applications. Original PDF
    badge AW5008L2FDR
    Shanghai Awinic Technology Low Noise Amplifier with Bypass Switch for LTE Low Band Original PDF
    badge 2CL2FH
    SUNMATE electronic Co., LTD 2CL2FH high voltage rectifier diode with 12 kV repetitive peak reverse voltage, 60 mA average output current, high surge resistance, fast switching, operating junction temperature to 125°C, in DO-41 package. Original PDF
    badge 2CL2FG
    SUNMATE electronic Co., LTD 2CL2FG high voltage rectifier diode with 10 kV repetitive peak reverse voltage, 60 mA average output current, 125 A surge current, fast recovery time of 150 ns, and operating junction temperature up to 125 °C. Original PDF
    badge 2CL2FP
    SUNMATE electronic Co., LTD High voltage rectifier diode 2CL2FP with 30 kV repetitive peak reverse voltage, 100 mA average output current, 125 A surge current, fast switching, high reliability design for CRT discharge, laser, and voltage doubler applications. Original PDF
    badge 2CL2FK
    SUNMATE electronic Co., LTD High voltage rectifier diode with 10 kV repetitive peak reverse voltage, 100 mA average output current, high surge resistance, fast switching, and operating junction temperature up to 125°C. Original PDF
    badge 2CL2FJ
    SUNMATE electronic Co., LTD High voltage rectifier diode 2CL2FJ with 15 kV repetitive peak reverse voltage, 60 mA average output current, high surge resistance, fast switching, and operating junction temperature up to 125°C. Original PDF
    badge 2CL2FF
    SUNMATE electronic Co., LTD High voltage rectifier diode 2CL2FF with 8.0 kV repetitive peak reverse voltage, 60 mA average output current, high surge resistance, and fast switching for CRT and high voltage applications. Original PDF
    badge 2CL2F
    SUNMATE electronic Co., LTD High voltage rectifier diode 2CL2F with 8 kV voltage range, 100 mA average output current, 125 °C junction temperature, high surge resistance, and repetitive peak reverse voltage capability for CRT and high-speed switching applications. Original PDF
    SF Impression Pixel

    L2F Price and Stock

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    Adam Technologies Inc RSVL-2FY-06-G-SMT-PP-T/R

    Connector: pin strips; female; data; soldering; 3A; 2.54mm; UL94V-0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME RSVL-2FY-06-G-SMT-PP-T/R 5,000 486
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.16
    • 10000 $0.16
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    E-Switch Inc CS4L2FP

    Switch: capacitive; Pos: 2; SPST-NO; 1A/24VDC; OFF-ON; CS; 1000mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CS4L2FP 20 1
    • 1 $50.45
    • 10 $47.27
    • 100 $42.94
    • 1000 $42.94
    • 10000 $42.94
    Buy Now
    Newark CS4L2FP Bulk 13 1
    • 1 $58.91
    • 10 $51.11
    • 100 $42.60
    • 1000 $41.75
    • 10000 $40.90
    Buy Now

    Hammond Manufacturing 1555L2F17GY

    Enclosure: multipurpose; X: 104mm; Y: 106mm; Z: 37mm; 1555F; grey
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 1555L2F17GY 3 1
    • 1 $17.00
    • 10 $15.12
    • 100 $15.12
    • 1000 $15.12
    • 10000 $15.12
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    Newark 1555L2F17GY Bulk 1 1
    • 1 $22.32
    • 10 $19.04
    • 100 $17.88
    • 1000 $17.88
    • 10000 $17.88
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    Powell Electronics 1555L2F17GY 259 1
    • 1 $12.77
    • 10 $12.77
    • 100 $11.18
    • 1000 $11.18
    • 10000 $11.18
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    Diotec Semiconductor AG 2CL2FL

    Diode: rectifying; THT; 15kV; 120mA; Ifsm: 10A; Ufmax: 26V; 150ns
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2CL2FL 1
    • 1 $2.90
    • 10 $2.61
    • 100 $2.09
    • 1000 $1.86
    • 10000 $1.80
    Get Quote

    OMRON Corporation D4NL-2FFG-B4

    Safety switch: bolting; D4NL; NC x2 + NO; IP67; plastic; black/red
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME D4NL-2FFG-B4 1
    • 1 $377.77
    • 10 $350.78
    • 100 $350.78
    • 1000 $350.78
    • 10000 $350.78
    Get Quote

    L2F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Contextual Info: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


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    an7254rfm10n15rfm10n15ldv4 mosfets+8c12 ic gateca3240edepletion mosfetharris semiconductor jfetmos diemosfet cross referencen channel depletion mosfet2n4036 PDF

    f25n06l

    Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
    Contextual Info: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,


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    rfp25n06lcatofp25n0glcf292cs-37075an7254+5an7260f25n06lf25n06rfp2506lta9638 PDF

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


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    2n69032n6796o-2i35afo-205af+132n6800t0-205af2n6802mil-s-19500/qpl-195002n69012n6758 jantx2n6903 jantx2n6898 jantx2n68982n67562n67582n6760 PDF

    Contextual Info: L2F1 thru L2F7 Surface Mount Glass Passivated Fast Recovery Rectifier Reverse Voltage 50~1000V Forward Current 2A Features • • • • • • • • Glass passivated fast recovery rectifiers Ideal for automated placement Low forward voltage drop Low


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    j-std-020aec-q10112-rev PDF

    Contextual Info: H O SID EN Lead Wiring Type UNIT : mm 4 Position HJC0106 • <x AW G #26 -y : 0.76^m A W G # 2 8 4 7 - y + f f : 1.27^m) • ') - k * S < 7 ) * $ l ,. L2f o ' J ; a ' ] i S * & i I ( S > Housing color : gray or ivory Applicable wire size : AWG # 2 6 :


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    hjc010627/am27/imhjc0221+176//m PDF

    capacitor x7r 50v 0805

    Abstract: capacitor 1000pf 50v 0805 0805 X7R 50 C2238 L3F15C102
    Contextual Info: Feedthru 0805/1206 Tin/Lead Capacitors L2F/L3F Series GENERAL DESCRIPTION Available in both a standard 0805 and 1206 size, AVX’s line of feedthru capacitors are ideal choices for EMI suppression, broadband I/O filtering, or Vcc power line conditioning. The unique construction of a feedthru capacitor provides low parallel inductance and offers excellent decoupling capability for all high di/dt environments and provides


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    l2f11acapacitor x7r 50v 0805capacitor 1000pf 50v 08050805 x7r 50+2c2238l3f15c102 PDF

    Contextual Info: • M3DE571 005 471b 5T1 HAS RFL1N18L RFL1N20L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features TO-2Û5AF • 1A, 180V and 200V BOTTOM VIEW • rDS(ON) = 3.65H • Design Optimized for 5V Gate Drives GATE SOURCE


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    m3de571rfl1n18lrfl1n20l92cs-373i2+192cs-36090 PDF

    l2e1811

    Abstract: EG-2102CA Q3806CA l2f50 epson l2f50 L2E1811D 2101CA lcd Inverter Delta Q3803CA
    Contextual Info: Display New 3.6-cm Color LCD Module for Digital Still Cameras -L2F50017TxxThe shrinking size, profile and lower power consumption of digital still cameras has led to a corresponding increase in demand for smaller, thinner, lower-power-consamption LCD monitors. In response to this market demand, we have developed the L2F50017Txx,


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    -l2f50017txxthel2f50017txxtec-2101ca10-year+9q3806caeg-2102cal2e1811l2f50epson l2f50l2e1811d2101calcd inverter deltaq3803ca PDF

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


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    2n69012n69022n69032n6904+15rfl1n08lrfl1n10lrfl1n12lrfl1n15lrfl1n18lrfl1n20lfield-effect transistors05lsmrfp8n18lrfp25n06ltransistorsfield-effect transistorrfp14n05lm 615 transistortransistor 684 PDF

    Contextual Info: L2F6 thru L2F7 Surface Mount Glass Passivated Rectifier Reverse Voltage 800~1000V Forward Current 2A Features • • • • • • • Glass passivated fast recovery rectifiers Ideal for automated placement Low forward voltage drop Low leakage current


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    j-std-020 PDF

    AN-7501

    Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
    Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the


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    100nman-7501ca3240edv4 mosfets+7ca3280rfm10n15rfm10n15lrfm15n152n4036p-channel 200v mos fetca3240 PDF

    POWER MOSFET APPLICATION NOTE

    Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
    Contextual Info: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching


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    100nmpower mosfet application noterfm10n152n4036+7an7254ca3240eca3280rfm10n15lrfm15n15vertical jfethigh power pulse generator with mosfet PDF

    fl911

    Contextual Info: RFL1N12L RFL1N15L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package F e a tu re s TO-20SAF BOTTOM VIEW • 1 A, 1 2 0V and 150V • r DS(O N ) = 1 -9 ^ • Design O p tim ized for 5V G ate Drives GATE SOURCE • Can be Driven D irectly from Q M O S, N M O S, T T L Circuits


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    rfl1n12lrfl1n15lo-20safan-7260+1fl911 PDF

    2N6904

    Abstract: lO51A
    Contextual Info: 2N6904 [g HARRIS August 1991 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T O -2 D 4 A A • 8A, 200V B O TTO M VIEW • rDS(on) = SOURCE • Design O ptim ized fo r 5V Gate Drive f DRAIN (FLANGE) • Can be Driven D irectly from QMOS, NMOS, TTL C ircuits


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    2n690492rs--2cs-37225lo51a PDF

    Contextual Info: KODENSHI CORP L \ A 25E D 5242b0fi QQQQ0?cJ T • PHOTODIODES SP-l2F S ix + D IM E N S IO N S (TO-92 <7)'>U (Unit: mm) □>7 * h * - h 'T 'f, 'M !T 'fS :ffite , S b < LTl'£T„ The SP-12FS, a silicon photodiode mounted in a low-cost clear sidelooking package (TO-92, low-cost, and permits


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    5242b0fisp-12fs2856k PDF

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


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    2n69012n6796o-2i35afo-205af+112n6800t0-205af2n6802mil-s-19500/2n6901 jantx2n6901 jantxv2n6901 jantx harris2n6898transistor h442n6897 jantxv2n6897 PDF

    Contextual Info: M S D IN C . E N G IN E E R IN G D A T A S H E E T RELAY TY PE:FCB-205-O l2feM COMPUTER PART N o.: 9 ^ 4 7 5 2 3 CUSTOMER/SPECIFICATION: K A 83536./ - C 2 .G W REV h i o w e TEST REQUIREMENTS -to% COIL R E S .: 5 0 0 TEST PROCEDURE m sdp- 7 9 0 OHMS CONTACT MAKE BOUNCE:


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    fcb-205-o10mh-k PDF

    transistor tic 106 N

    Contextual Info: • n *1302571 * » 00547^7 4T0 ■ « August 1991 HAS R F P 2 5 N 6 L N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistor L2FET Features Package • 25A, 60V • rDS(ON) = 0 .0 8 5 0 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


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    rfp25n06l92cs-37075461cfan7254+2an-7260transistor tic 106 n PDF

    2N6903

    Contextual Info: • 43D 22 71 DDS 4 70 0 Ì34 ■ HAS 2N 6903 03 HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T0-205AF BOTTOM VIEW • 0.98A, 200V • rDS(on) = 3 .6 5 n GATE SOURCE • Design Optimized for 5V Gate Drive


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    t0-205af00s47022n6903 PDF

    1N20L

    Abstract: RFL1N18L RFL1N20L
    Contextual Info: H a r r i s August 1991 R F L 1 N 1 8 L R F L 1 N 2 L N-Channel Logic Level Power Field-Effect Transistors {L2FET} Package Features • 1A, 180V and 200V T O -2 0 5 A F BOTTOM VIEW • rDS 0fr[ = 3 .6 5 ft • Design Optimized for 5V Gate Drives GATE SOURCE


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    rfl1n18lrfl1n20laccomc5-375091n20l+3an72s4an-726092cs-57si2 PDF

    FP7N10LE

    Abstract: JEDEC TO-251AA RFD7N10LE RFP4N05L RFP4N06L RFD7N10LESM 7n10l
    Contextual Info: RFP4N05L RFP4N06L Harris A u g u s t 19 91 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T0-220A B TOP VIEW • 4A, 5 0 V and 60 V • rD S {0 N ) = ° - 8 n DRAIN (FLANGE) • Design O ptim ized for 5 V G a te Drives • Can b e D riven D irectly from Q M O S, NM O S, T T L Circuits


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    rfp4n05lrfp4n06lmil-std-883fp7n10le+4jedec to-251aarfd7n10lerfd7n10lesm7n10l PDF

    F15N05L

    Abstract: F15N06L f15n05 f15n06 N05L RFP15N06L 3SI4 RFM15N05L RFM15N06L RFP15N05L
    Contextual Info: R F M 1 5 N 0 5 L /0 6 L H A IR R IS RFP15N05L/06L N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features T0-204A A BOTTOM VIEW • 15A, 50V and 60V • rDS(ON) = 0 .1 4 0 DRAIN ^ {F L A N G E ) SOURCE • Design Optimized for 5V Gate Drives


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    rfm15n05l/06lrfp15n05l/06lrfm15n05l+10rfm15n06lrfp15n05lrfp15n06ls2cs-3si47f15n05lf15n06lf15n05f15n06n05l3si4 PDF

    2N6903

    Abstract: 92CS-4C745 SC12N
    Contextual Info: 2N6903 g HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors (L2FET F e a tu re s P a ck a g e T 0 -2 0 5 A F • 0.9 8A , 2 0 0 V B O TTO M VIEW • rD S(on) = 3 .6 5 H • Design O p tim ized fo r 5V G ate Drive • Can b e D riven Directly from Q M O S, NM O S, TT L Circuits


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    2n690392cs-4c745sc12n PDF

    DELPHI Connectors

    Abstract: RGB-24 LVDS camera-link cable camera-link to SDI RGB24 basic digital multi meter Delphi LVDS cable sdi sdo rs232
    Contextual Info: picassoTM FI series Datasheet picassoTM FI models Key features • • • • • • • • • • • • opticlinkTM fiber interface two models: mm: multi-mode fiber cable compatible sm: single-mode fiber cable compatible for connection to the ARVOO opticlinkTM interface L2F or C2F


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    rs-23298/me/nt/2000/xpdelphi connectorsrgb-24+6lvds camera-link cablecamera-link to sdirgb24basic digital multi meterdelphi lvds cablesdi sdo rs232 PDF