KSB546 Search Results

KSB546

Abstract: KSD401 vertical tv deflexion KSD401 O
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546

Contextual Info: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSB546 • Collector-Base Voltage: VCBO=200V • Collector Current: IC=2A • Collector Dissipation: PC=25W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r C urrent: lc=2A C ollecto r D issipation: P c= 2 5 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating

Contextual Info: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSB546

Abstract: KSD401
Contextual Info: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSB546

Abstract: KSD401
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r Current: lc=2A C ollecto r D issipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit

Contextual Info: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Vbltage VCBo =200V Collector Current lc=2A Collector Dissipation PC=25W Tc=25°C TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB546 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-B ase Voltage: V Cbo = -200V C ollecto r C urrent: lc = -2A C ollecto r D issipation: Pc= 2 5W T c=25°C ABSOLUTE MAXIMUM RATINGS Characteristic

Contextual Info: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor

C25W

Contextual Info: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Com plem en t to KS0401 • Collector-B ase Voltage V Cb o = -2 0 0 V • C ollector Current lc = - 2 A • C ollector Dissipation P C=25W Tc =25°C ABSOLUTE MAXIMUM RATINGS

KSB546

Abstract: KSD401
Contextual Info: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSD401 Collector-Base Voltage: V C b o = -200V Collector Current: lc = -2A Collector Dissipation: Pc= 25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage

Contextual Info: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor

TS 4142

Abstract: 18Oi S03 pnp KSD401 KSD526 samsung tv
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC KSB546 D I T 'ib M m a 0 0 0 7 SOG PNP EPITAXIAL SILICON TRANSISTOR - T 33- TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-Base Voltage Vcso = -2 0 0 V C ollecto r C urrent lc = - 2 A C ollecto r D issipation PC=25W Tc =25°C

KSB546

Abstract: KSD401
Contextual Info: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor

KSD401

Abstract: KSB546
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB546 TV VERTICAL DEFLECTION OUTPUT • • • • C o m p le m e n t to K S D 401 C o lle c to r-B a s e V o lta g e : V C b o = -2 0 0 V C o lle c to r C u rre n t: lc = -2 A C o lle c to r D is s ip a tio n : P c = 2 5 W T c = 2 5 °C

ksb546

Contextual Info: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • Complement to KSD401 • Collector-Base Voltage V 0 e o = -200V • Collector Current l c = -2A • Collector Dissipation Pc= 25W Tc=25'C ABSOLUTE MAXIMUM RATINGS Rating Unit VcEO

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

B0530

Abstract: MPSU57 motorola 2SA958 2N2882 ppc power transistor
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SOT69504 SOT69604 SOT69604 SOT3504 SOT3504 SOT3504 SOT3512 SOT3512 ~~~ggJ2 25 30 2N6180 2SA1008 2SA1395M B03700 B03700 B03720 B03720 SOT69512 ~~+~~~~~ 35 40 SOT69612 MM5007 NSOU57 SOT3508 SOT3508 SOT3508

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc