KM93C67 Search Results

93C67

Abstract: 93c57
Contextual Info: PRELIMINARY KM93C57/KM93C67 CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 2.7V~5.5V • Low power consum ption — Active : 1 mA — Standby: 50^A • User selectable memory organization

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 Ii b m H e ÜGlbflMQ 371 MSIIGK KM93C57/KM93C67 CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby; 250pA (TTL)

Contextual Info: PRELIMINARY KM93C57V/KM93C67V CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ~ 5 .5 V • Low power consumption — Active: 3 mA TTL — Standby: 250pA (TTL) • User selectable m emory organization

Contextual Info: CMOS EEPROM KM93C57/KM93C67 2K/4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250/JV (TTL) • User selectable memory organization — 256 x 16 o r 512 x 8 for KM93C67

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • TTbHmS KM93C57V/KM93C67V DDlbfiH? 723 ■ PRELIMINARY CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ^ 5 .5 V • Low power consumption

Contextual Info: PRELIMINARY KM93C57V/KM93C67V CMOS EEPROM 2 K /4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced exte n d e d o p erating voltage: 2 . 0 V - 4.5V • Low po w er c onsum ption The KM93C57V/67V is a extended voltage 2K/4K b its

SK 01 100 SA

Abstract: dl 750 Delay line m93c57
Contextual Info: PRELIMINARY M93C57/KM93C67 CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 100 fiA (TTL) • User selectable m emory organization

256X16

Abstract: 256X8 512X8 KM93C57 KM93C67 10XXXXX
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^ 4 14 2 KM93C57/KM93C67 DGlbfl40 371 SÎ1GK CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250/xA (TTL)

Contextual Info: PRELIMINARY KM93C57/KM93C67 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 100 A (TTL) • User selectable memory organization — 256 x 16 or 512 x 8 for KM93C67

3c57

Contextual Info: PRELIMINARY KM93C57V/KM93C67V CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced e x te n d e d o p erating voltage: 2 .0 V - 4 .5 V • Low po w er consum ption T h e K M 9 3C 5 7 V /6 7V is a e x te n d e d v o lta g e 2KIAK b its

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

atmel 93C46

Abstract: 93c46 atmel 93C46 national 93C46 national semiconductor 24c04 Atmel 93c46 I2C atmel 24c04 ATMEL 24c32 atmel 24c02 24c04a atmel
Contextual Info: SERIAL EEPROM Serial EEPROM Cross Reference Guide The purpose of this document is to provide a quick way to determine the closest Microchip equivalent to Serial EEPROMs produced by other manufacturers. The cross reference section is broken down by manufacturer and lists all parts from that manufacturer, and the

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

64x16

Abstract: 8DIP 28-DIP KM28C64B 128X16
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258