KM69B257 Search Results
KM69B257 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SAMSUNG ELECTRONICS INC M2E J> H T^mMS Q O l Q ^ b fi HS tlC K - KM69B257 p R E U M iN A R Y BiCMOS SRAM 3 2 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Times —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times |
OCR Scan |
km69b257195ma175ma155ma+2 | |
LM 739 NContextual Info: PRELIMINARY KM69B257 BiCMOS SRAM 3 2 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Times — Com mercial: 10ns, 12ns, 15ns, 20ns — 5ns & 6ns Output Enable tim es • Low Power Dissipation — Standby: 20mA — O perating: 195m A, 175m A, 155m A, 130mA |
OCR Scan |
km69b257130ma69b257lm 739 n | |
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Contextual Info: PRELIMINARY KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM69B257AJ-8: 185mA (max.) |
OCR Scan |
km69b257akm69b257aj-8185makm69b257aj-10+5 | |
20L08Contextual Info: KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM 69B257AJ-8:185m A (Max.) |
OCR Scan |
km69b257a110ma69b257aj-8185ma+6 | |
SOJ 44
Abstract: 1MX1 KM6865
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OCR Scan |
km6465b/blkm6466b/blkm6865b/blkm64258b+9 | |
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Contextual Info: PRELIMINARY KM69B257 BiCMOS SRAM 32 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Timas —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 155mA, 130mA |
OCR Scan |
km69b257195ma175ma155ma+1 | |
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Contextual Info: SA MS UN G E L E C T R O N I C S INC b?E » • 7 T b 4 1 4 2 D L 1 7 bl b 1ÔS KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) |
OCR Scan |
km69b257a110ma69b257aj-8km69b+6 | |
KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
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OCR Scan |
km4164bpkm41c256pkm41c256jkm41c256z+15 | |
41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
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OCR Scan |
41c25641c25741c25841c464+14 | |
TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
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OCR Scan |
tc511001tc514101514170b514280b+16 | |
KM28C64AContextual Info: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19 |
OCR Scan |
km75c03akm75c101akm75c102akm75c103a+2 | |
KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
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OCR Scan |
km41c256pkm41c255jkm41c258zkm41c257p+15 | |
KM68512
Abstract: 12BKX8 km6865b
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OCR Scan |
010/j/tkm6851212bkx8km6865b | |
KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
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OCR Scan |
km41c256pkm41c256jkm41c256zkm41c257p+12 | |
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AG10
Abstract: km416c256 1m maskrom KM68B1002-10
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OCR Scan |
km41c4000a-7km41c4000a-8km41c4000a-10km41c4000al-7+10 | |