KM681000BLI Search Results

Contextual Info: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.

A13CH

Abstract: km6810008 A12CZ KM681000BLI km6810008l
Contextual Info: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.

TAA 310A

Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

Contextual Info: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)

Contextual Info: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8

681000BLP-7L

Abstract: 681000BLP B8100 KM681000BI 681000BLG
Contextual Info: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G EN ER A L DESCRIPTION • Process Technology: 0.6nm C M O S • Organization: 128Kx8 • Power Supply Voltaga: Single 5.0V±10 % • Low Date Retention Voltage : 2V Mln • Three state output and TTL Compatible

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

Contextual Info: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and have various package types

0820R

Abstract: KM62256B
Contextual Info: KM681OOOBLI/BLI-L ~l3 1 , 0 V2 W O R D X CMOS SRAM 8 B it C M O S S ts tic R A M Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

C-4555

Abstract: c4555 32TSOP
Contextual Info: M E M O R Y ICs FUNCTION G UIDE 1. Low Power SRAM 5V Operation Density 256K 512K 1M Org. Product No' 32K x 3 64K x 3 128K x 8 6 4 K x 16 4M 512K x 8 Icc2/lsbl Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 C 45/55/70 70/100 70/20 28-TSOP(l) Reverse KM62256CLE

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

KM681000BLG-7L

Abstract: KM681000BLP-7L KM681000BLT-5 KM681000B KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L
Contextual Info: PRELIMINARY CMOS SRAM KM681000B Family 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.6§- CMOS Organization : 128Kx8 Power Supply Voltage : Single 5.0V ¡¾ 10% Low Data Retention Voltage : 2V Min

KM681000B

Abstract: KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft for commercial product - Commercial Product only October 28, 1992 Preliminary 0.1 - Initial draft for Extended/Industrial Product