KM6264B Search Results

6264B

Abstract: 6264BL-7L cs1g 6264bl KM6264BL
Contextual Info: KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70,100,120 ns m ax. • Low P o w er D issipation S tandb y (C M O S): 10;-W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 5 5 m W /M H z (max.)

Contextual Info: KM6264B Family CMOS SRAM 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6264B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges

KM6264

Abstract: KM6264B KM6264BLP-7 28-SOP 8KX8-Bit CMOS SRAM km6264blg-10 KM6264BLG-10L CC02V
Contextual Info: CMOS SRAM KM6264B Family 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : CMOS • Organization : 8K x 8 • Power Supply Voltage : Single 5V ± 10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

Contextual Info: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100, 120 ns Max. • Low Power Dissipation Standby (CMOS): 10nW(Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) • Single 5V±10% Power Supply

KM6264BL-10L

Abstract: 6264bl km6264 6264 SRAM
Contextual Info: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply

Contextual Info: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 70,100,120 ns m ax. • Low P ow er D issipation Standb y (CM OS): 10MW (typ.) L-Version T h e K M 6 2 6 4 B /B L /B L -L is a 6 5,5 36 -b it h ig h -s p e e d S ta tic

Contextual Info: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 55mW/MHz (max.) • Single 5V ± 10% Power Supply

KM6264BL-10

Abstract: KM6264BL-10L KM6264BL-12 DIP-600B KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10
Contextual Info: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,1 0 0 , 120 ns Max. • Low Power Dissipation Standby (CMOS): 10|iW (Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) •Single 5V±10% Power Supply

Contextual Info: SAMSUNG E L E C T R O N I C S INC b7E » • T'ìbMlMS KM6264BL/KM6264BL-L GD17472 mg CMOS SRAM 8 K x8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5(iW (typ.) LL-Version

km6264

Abstract: KM6264BL-10L KM6264BL10L 6264bl KM6264BLS SRAM 6264 m6264 KM6264BL-10
Contextual Info: KM6264BUKM6264BL-L CMOS SRAM 8 K x 8 Bit Static R A M GENERAL DESCRIPTION FEATURES • Fast Access Time : 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) : 10« W (typ) L.Version : 5// W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply

KM6264BL-10L

Abstract: KM6264BL-10 KM6264BL-7 KM6264BL7L KM6264BL7 KM6264BL-7L
Contextual Info: CMOS SRAM KM6264BL/KM6264BL-L 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10nW (typ.) L-Version 5(iW (typ.) LL-Version Operating: 55mW /MHz (max.) • Single 5 V ± 1 0 % Power Supply

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

KM6264BL-10

Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

AD1845

Contextual Info: KS0161 M u l ti m e d i a ELECTRONICS OVERVIEW The KS0161 multimedia audio chip represents the state - o f - the - art in multimedia audio technology. KS0161 combines a high - quality 32 - voice wavetable synthesizer, a powerful 16 - bit MPU, SoundBlaster1 and MPU401 compatibility, and full AD 1848 support into a single chip. The audio

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7