KM62256A Search Results

Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 00002^ KM62256A/KM62256AL 1 ■ CMOS SRAM 3 2 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 60, 100, 120 ns max . • Low Power Dissipation Standby: 0.55mW (max.) Operating: 248mW (max.) • Low Data Retention Current: 50jiA (max.)

km62256alg

Contextual Info: SAMSUNG ELECTRONICS INC _ 4 SE I> T ^ b Ml Mg D D lD 7 fl fl ÜHSNGK CMOS SRAM KM62256ÄLPI/KM62256ALGI : - : 3 2 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range: - 4 0 to 8 5 °C

KM62256A

Abstract: km62256al KM62256 km62256ap m62256a KM62256AL-10L
Contextual Info: KM62256A/KM62256AL/KM62256AL-L CMOS SRAM 3 2 K x8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 80,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L/LL-Version Operating: 247.5mW (max.) • Single 5 V ± 1 0 % Power Supply

KM62256ALP

Abstract: km62256alg KM62256ALGI-10 KM62256A
Contextual Info: KM62256ALPI/KM62256ALGI CMOS SRAM 32 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • industrial Temperature Range: - 4 0 t o 8 5 ° C • Fast Access Time: 100,120 ns (max.) • Low Power Dissipation Standby (CMOS): 10MW (typ.)

KM62256A

Contextual Info: KM62256A/KM62256AÜKM62256AL-L CMOS SRAM 3 2 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION The KM62256A/AL/AL-L is 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bit. The device is fabricated using Samsung's advanced

Contextual Info: SAMSUNG ELECTRONICS INC bME D I TTbMlMZ 0013^40 KM62256A/KM62256AUKM62256AL-L 0 7 e] • S M G K CMOS SRAM 32Kx8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 80,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10/iW (typ.) ULL Version

KM62256AL-L

Contextual Info: KM62256A/KM62256AL/KM62256AL-L CMOS SRAM 3 2 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s Tim e: 80,100,120 ns m ax. • Lo w P o w er D issipation T h e K M 6 2 2 5 6 A /A L /A L -L is 262,144-bit h ig h -s p e e d S ta tic S tandb y (C M O S): 10MW (typ.) U L L -V e rsio n

Contextual Info: CMOS SRAM KM62256ALPI/KM62256ALGI 3 2 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range: - 4 0 to 85 °C • Fast Access Time: 100,120 ns (max.) • Low Power Dissipation Standby (CMOS): 10|jW (typ.)

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

TC551001a

Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
Contextual Info: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

KM62256ALP-8

Abstract: km62256ap-10 KM62256ALP KM62256ALP-12 KM62256ALP8 KM62256AP-12 KM62256BL-10L IDT71256L20 KM62256BL-12L IDT71256L30
Contextual Info: — 2 5 6 K X m s tt £ C'C TAAC max ns) TCAC •ax (ns) CMOS A TOE ■ax (ns) y S t a t i c &■ J' 7 T0H nin (ns) TOD max (ns) RAM ( 3 2 7 6 8 x 8 ) % w TWP TDS (ns) (ns) TDH min (ns) 2 8 P I N TWD ■in (ns) TWR max (ns) V D D or V C C I DD (V) (mA) 6 2 2 5 6

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM416C256-7

Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
Contextual Info: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

AG10

Abstract: km416c256 1m maskrom KM68B1002-10
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10