KM44S32030T Search Results

Contextual Info: Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM Intel 1.0 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S3320T1 is a 32M bit x 72 Synchro­

CDC2509

Abstract: AE CX0 600
Contextual Info: Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S3320T is a 32M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: SDRAM MODULE_ Preliminary KMM377S3320T1 Revision History R e v is io n 3 M ay 1 9 9 8 - CLK Input Cap. is added by PLL Input Cap. (27pF) REV. 3 May '98 ELECTRONICS Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM (Intel 1.0 ver. Base)

PC133 registered reference design

Abstract: KMM390S3320T1-GA KMM390S3320T1
Contextual Info: KMM390S3320T1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions

Contextual Info: Preliminary KMM377S3320T3 SDRAM MODULE KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S3320T3 is a 32M bit x 72 Synchro­

Contextual Info: KMM377S3320T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S3320T3 PC100 Registered DIMM KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

KMM377S3320T1-G8

Abstract: KMM377S3320T1-GH KMM377S3320T1-GL CDC2509
Contextual Info: SDRAM MODULE Preliminary KMM377S3320T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. Revision 5 (November 1998) - Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram

CDC2509

Contextual Info: Preliminary SDRAM MODULE_ KMM378S3320T Revision History Revision 2 July 1998 "R EG E" description is changed. REV. 2 July 1998 ELECTRONICS Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

54PIN

Abstract: KM44S32030
Contextual Info: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the

KM44S32030

Contextual Info: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the

KMM390S3320T-GA

Abstract: support samsung pc133 sdram PC133 registered reference design
Contextual Info: KMM390S3320T Preliminary PC133 SDRAM MODULE Revision History Revision 0 Jan. 1999 • PC133 first published REV. 0 Jan. 1999 Preliminary PC133 SDRAM MODULE KMM390S3320T KMM390S3320T SDRAM DIMM (RCC 0.8 ver. Base) 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD

44s32

Contextual Info: Preliminary KM44S32030 CMOS SDRAM 8M X 4Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The KM44S32Q30 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,

CDC2509

Abstract: KMM378S3320T-G0 KMM378S3320T-G8 KMM378S3320T-GH KMM378S3320T-GL A7167
Contextual Info: SDRAM MODULE Preliminary KMM378S3320T Revision History Revision 2 July 1998 -. "REGE" description is changed. REV. 2 July 1998 Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs

KMM377S3320T2-GL

Abstract: KMM377S3320T2-GH MA2180
Contextual Info: SDRAM MODULE Preliminary KMM377S3320T2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S3320T2 SDRAM MODULE KMM377S3320T2 SDRAM DIMM (Intel 1.1 ver. Base)

KMM377S3320T3-GL

Abstract: KMM377S3320T3-GH MA2180
Contextual Info: SDRAM MODULE KMM377S3320T3 KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S3320T3 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S3320T3 consists of eighteen CMOS 32Mx4 bit

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .

KM44S32030T-G8

Abstract: KMM377S3320T1-G8 KMM377S3320T1-GH KMM377S3320T1-GL MA2180
Contextual Info: SDRAM MODULE Preliminary KMM377S3320T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM (Intel 1.0 ver. Base)