KM44S32030 Search Results

Contextual Info: Preliminary CMOS SDRAM KM44S32030 8M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S32030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 8,388,608 w ords by 4 bits,

Contextual Info: KM44S32030A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 1999 KM44S32030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999

KM44S32030B

Contextual Info: KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM44S32030B CMOS SDRAM Revision History Revision 0.0 May 15, 1999

Contextual Info: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP

54PIN

Abstract: KM44S32030
Contextual Info: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the

KM44S32030

Contextual Info: Preliminary CMOS SDRAM KM44S32030 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the

44s32

Contextual Info: Preliminary KM44S32030 CMOS SDRAM 8M X 4Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The KM44S32Q30 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,

Contextual Info: KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M X 4Bit X 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 ELECTRONICS KM44S32030B CMOS SDRAM R evision H istory

741 op amp

Contextual Info: KM44S32030A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM44S32030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM Intel 1.0 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S3320T1 is a 32M bit x 72 Synchro­

CDC2509

Abstract: AE CX0 600
Contextual Info: Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S3320T is a 32M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: SDRAM MODULE_ Preliminary KMM377S3320T1 Revision History R e v is io n 3 M ay 1 9 9 8 - CLK Input Cap. is added by PLL Input Cap. (27pF) REV. 3 May '98 ELECTRONICS Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM (Intel 1.0 ver. Base)

KMM390S3320BT1-GA

Abstract: 16MX8 32MX72 KMM390S1723BT1-GA samsung memory
Contextual Info: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 Aug. 1999 REV. 0 Aug. 1999 SERIAL PRESENCE DETECT PC133 Registered DIMM KMM390S1723BT1-GA •Organization : 16MX72 •Composition : 16MX8 * 9ea •Used component part # : KM48S16030BT-GA

PC133 registered reference design

Abstract: KMM390S3320AT1
Contextual Info: KMM390S3320AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions

KMM390S3320BT1-GA

Abstract: PC133 registered reference design
Contextual Info: KMM390S3320BT1 PC133 Registered DIMM Revision History Revision 0.0 Aug. 1999 • PC133 first published REV. 0.0 Aug. 1999 PC133 Registered DIMM KMM390S3320BT1 KMM390S3320BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD

Contextual Info: Preliminary KMM377S3320T3 SDRAM MODULE KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S3320T3 is a 32M bit x 72 Synchro­

Contextual Info: KMM377S3320T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S3320T3 PC100 Registered DIMM KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD

PC133 registered reference design

Contextual Info: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

KMM377S3320T1-G8

Abstract: KMM377S3320T1-GH KMM377S3320T1-GL CDC2509
Contextual Info: SDRAM MODULE Preliminary KMM377S3320T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 4 (July 1998) - "REGE" description is changed. Revision 5 (November 1998) - Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram

CDC2509

Contextual Info: Preliminary SDRAM MODULE_ KMM378S3320T Revision History Revision 2 July 1998 "R EG E" description is changed. REV. 2 July 1998 ELECTRONICS Preliminary KMM378S3320T SDRAM MODULE KMM378S3320T 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref. 3.3V Synch. DRAMs

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

KMM390S3320T-GA

Abstract: support samsung pc133 sdram PC133 registered reference design
Contextual Info: KMM390S3320T Preliminary PC133 SDRAM MODULE Revision History Revision 0 Jan. 1999 • PC133 first published REV. 0 Jan. 1999 Preliminary PC133 SDRAM MODULE KMM390S3320T KMM390S3320T SDRAM DIMM (RCC 0.8 ver. Base) 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD