KM48S2020CT Search Results

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .

CDC2509

Contextual Info: Preliminary KM M378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2Mx72 SDRAM DIMM with PLL & Register based on 2Mx8, 4K Ref. 3.3V Synchronous DRAMs FEATURE G ENER AL D ESCRIPTION • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM374S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.

KMM366S403CTL-GO

Contextual Info: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

U655

Contextual Info: KMM374S203CTL PC66 SDRAM MODULE KMM374S203CTL SDRAM DIMM 2Mx72 SDRAM DIMM with ECC based on 2Mx8,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S203CTL is a 2M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

KM48S2020CT-G10

Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
Contextual Info: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

CDC2509

Abstract: KM48S2020 KMM378S203CT-G0 KMM378S203CT-G8 KMM378S203CT-GH KMM378S203CT-GL MA3910
Contextual Info: Preliminary KMM378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2Mx72 SDRAM DIMM with PLL & Register based on 2Mx8, 4K Ref. 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

KMM374S403CTS-G8

Abstract: KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct
Contextual Info: PC100 Unbuffered DIMM KMM374S403CTS KMM374S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

km48s2020ct

Abstract: KMM374S403CTL-G0 KM48S2020
Contextual Info: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM374S203CTL-G0

Contextual Info: KMM374S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM374S403CT

Abstract: KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39
Contextual Info: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.

Contextual Info: KMM374S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.

Contextual Info: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V

Contextual Info: KMM374S403CT PC100 SDRAM MODULE KMM374S403CT SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

870Q

Abstract: mrs 751
Contextual Info: 144pin SDRAM SOD1MM KMM466S203CT KMM466S203CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203CT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KMM366S403CT-GL

Contextual Info: KMM366S403CT PC100 SDRAM MODULE KMM366S403CT SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs): ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

KM48S2020CT-F10

Abstract: KMM466S203CT-F0 KM48S2020
Contextual Info: KMM466S203CT 144pin SDRAM SODIMM Revision History Revision . 2 Mar. 1998 •Some Parameter values & Charcteristeristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

km48s2020ct

Abstract: KM48S2020CT-G
Contextual Info: KM48S2020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.

Contextual Info: SDRAM MODULE Preliminary KMM375S203CT Revision History Revision 4 May 1998 Input leakage current (Inputs) I IL is updated. Input Capacitances are updated. Revision 5 (June 1998) -. "REGE" description is changed. REV. 5 June 1998 ELECTRONICS Preliminary KMM375S203CT

Contextual Info: KM48S2020C CMOS SDRAM Revision History Revision ,4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.

Contextual Info: PC100 SDRAM MODULE KMM366S403CTS KMM366S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung