KM416S1020 Search Results

Contextual Info: KM416S1020C CMOS SDRAM 1Mx 16 SDRAM 5 12K X 16bit X 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.6 Sep. 1998 ELECTRONICS KM416S1020C CMOS SDRAM

KM416S1020

Abstract: 2 Banks x 512K x 16
Contextual Info: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History

Contextual Info: KM416S1020C CMOS SDRAM 512K X 16Bitx 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS technol­

Contextual Info: KM416S1020BT-G10T 1/2 IL08 C-MOS 16 M (1,048,576 x 16)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 VDD GND GND GND VDD VDD GND GND VDD VDD NC NC VDD INPUT A0 -A10 A11 : : : CAS CKE : CLK : : CS LDQM, UDQM :

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

Contextual Info: KM416S1020BT SDRAM ELECTRONICS 512K x 16B itx2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

RFU1A

Contextual Info: KM416S1020C CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES • • • • GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs The KM416S1020C is 16,777,216 bits synchronous high data

KM416S1020B

Abstract: QQ372G7
Contextual Info: KM416S1020B CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION •• JEDEC standard 3.3V power supply The KM416S1020B is 16,777,216 bits synchronous high data - LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,

Contextual Info: KM416S1020C CMOS SDRAM Revision History Revision 0.4 April 17, 1998 • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS . • Changed tOH from 2.5ns to 3ns in KM416S1020C-8/H/L/10 in AC CHARACTERISTICS . Revision 0.3 (April 2, 1998)

Contextual Info: KM416S1020C Preliminary CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .2 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.

KM416S1020

Abstract: KM416S1020CT
Contextual Info: KM416S1020C CMOS SDRAM 16Mbit SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.4 April 1998 -1- Rev. 0.4 Apr. 1998 KM416S1020C CMOS SDRAM Revision History Revision 0.4 (April 17, 1998) • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS .

CAMERA motion detection

Abstract: motion DETECTOR CIRCUIT DIAGRAM dpcm AF SO5 camera module af ECST dcp27 mark gb0 motion DETECTOR block DIAGRAM motion DETECTOR CIRCUIT
Contextual Info: DATA SHEET KS7333 PRODUCT INFORMATION PRODUCT SUMMARY KS7333 is a product used in video camera systems, such as camcorders and surveillance camera systems that use charge coupled devices CCD . It takes the CCD input as digital data and performs 3-D interpolation, image

eeprom programmer schematic 24c08

Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
Contextual Info: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or

Contextual Info: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

sio lpc chip intel p4 motherboard

Abstract: rdi-dmt-1206 980020 NAND RJMG-5312-11-01 Amphenol RJMG intel 810 MOTHERBOARD pcb CIRCUIT rdi DMT-1206 intel 810 MOTHERBOARD pcb CIRCUIT diagram c.i GD75232 smd 82801 g SCHEMATIC DIAGRAM
Contextual Info: Intel 810 Chipset Design Guide June 1999 Order Number: 290657-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability

Contextual Info: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5 u A to ± 1uA, llL(DQ) : ± 5 u A to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1.4V ±200 mV.

km4132g512

Abstract: SGRAM RC2H KM4232W
Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE . 9 II. DUAL PORT RAM DATA SHEETS 1.KM4216C256 . VRAM EDO, 2WE , 256Kx16 . 13 2.KM4216C258 . VRAM(EDO, 2CAS), 256Kx16 .54

Contextual Info: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

MT48LC2M8A1-8B

Abstract: 1F27FC04
Contextual Info: Freescale Semiconductor Application Note AN2066/D Rev. 1.5, 11/2001 MPC8xx SDRAM Interface Freescale Semiconductor, Inc. Heinz Wrobel Freescale GmbH, Munich Janet Snyder NCSD Applications, Austin Part I Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two

microtek inverter circuit

Abstract: SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49
Contextual Info: PM3575 APPLICATION NOTE PMC-981057 ISSUE 1 EXACT 24+2 REFERENCE DESIGN PM3575 EXACT 24 x 10/100 + 2 x 1000 ETHERNET SWITCH REFERENCE DESIGN ISSUE 1: FEBRUARY 1999 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE PM3575

lmb 1021

Abstract: bosch MA 3.1 ecu map wiring 37 pin BOSCH ECU microcontroller bosch ecu 0 261 200 218 connection diagram bosch 0 261 s06 122 nec Microcontroller transistor full 2000 to 2012 TC1130 AC bridg Properties hyundai ECU IC
Contextual Info: U s e r ’ s M a n u a l , V 1 .3 , N o v . 2004 TC1130 32-Bit Single-Chip Microcontroller Volume 1 of 2 : System Units Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2004-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

74FCT164245

Abstract: ba21 29F040J 74HC125 dip XC488CT-ND BA20 MICTOR-38 10UF 1N4148 MPC860
Contextual Info: * MPC860 Reference Design Board SAMBA Release Guide * RELEASE: 0.3 DATE: 5/18/98 [CONTENTS] - Introduction Tools Used

PQ-33

Abstract: PQ-12 PQ-31 E1BBBC04
Contextual Info: MOTOROLA SEMICONDUCTOR DESIGN CONCEPT DC-11/10/98 - REV 1.0 MPC8xx SDRAM Interface Heinz Wrobel Motorola GmbH, Munich Janet Snyder, Spencer Jackson Motorola NetComm, Austin Gordon Lawton Motorola Ltd., East Kilbride 1. Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two advantages over