JUL02 Search Results

G2004

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T $ LOC AD RESERVED. REV IS IO N S D I ST 00 LTR DE SC R I P T I O N D WN DATE APVD REV PER OG3C 12 JUL02 RB JO REV RER OG3C-0039-03 16 JUNO3

tyco 17105-3608

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R 1G H T S 20 LOC RESERVED. ES R E V ISIONS DIST 00 LTR DESCRIPTION REVISED A5 4.5 REF <i i o o o r— -0- -e— o o o — — -

SGP20N60HS

Abstract: SGW20N60HS SKP20N60HS SKW20N60HS IGBT FF 450
Contextual Info: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:

Contextual Info: 4 DR AW ING THIS MADE DRAWI NG 0 IN IS 3 T H IR D ANGLE UNPUBLI SHED. COPYRIGHT 19 RELEASED BY ANP FOR P U B L I C A T I O N INCORPORATED. ALL 2 <3> P R O JE C TIO N INTERNATIONAL RIGHTS DI ST LOC ,19 FT RESERVED. 4 REV I 5 I 0 N 5 P F ZONE LTR D E S C R I P T I ON

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

BBY56-03W

Contextual Info: BBY56-03W Silicon Tuning Diode 2 • Excellent linearity 1 • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread VPS05176 Type

BC847PN SOT363

Abstract: VPS05604 BC847PN Marking 1ps sot
Contextual Info: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation

Contextual Info: I i 3 0 -JUL-02 15:06:30 amp 1641¿/home/amp!6412/docmod REVI SI ONS DI ST LÛC DF CO P H THE TIP .025 2-¿0 THE DIAMETER PARTS ANP, OF TO PART MARKED ON BE CONTACT TROE POSTS POSITION ASSEMBLED BY NONBE R AND EITHER SIDE. WILL OF A NP DATE FALL EACH D E S C R IP T IO N

BUP314

Abstract: Q67040-S4517 bup314 equivalent IGW25T120
Contextual Info: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply

IKW08T120

Abstract: BUP305D
Contextual Info: IKW08T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs

Q67040-S4230

Abstract: Q67040-S4231 Q67040-S4340 SKA06N60 SKB06N60 SKP06N60
Contextual Info: SKP06N60, SKB06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

Q67040-S4215

Abstract: SKB02N60 SKP02N60
Contextual Info: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

SKW07N120

Abstract: inverter 4v to 12v infineon igbt 1200v 600A
Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

Contextual Info: 8 T H I S DRAWING C C OPYRIGHT 7 I S U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. 6 5 ,19 ALL R IG H T S R ES E R V E D . -A A AMP 4 8 0 5 REV 1 0 / 9 3 i 3 0 - JUL-02 15:11:33 amp 1641¿/home/amp!6 4 1 2/docmod

Q62702-A1028

Contextual Info: BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BAT 62-02W L 1=C SCD-80

Contextual Info: SMBTA06U NPN Silicon AF Transistor Array • High breakdown voltage 5 4 6 • Low collector-emitter saturation voltage • Complementary type: SMBTA56U PNP 3 • Two ( galvanic) internal isolated Transistors 2 with good matching in one package 1 VPW09197

RG81

Abstract: IGW08T120 BUP305D
Contextual Info: IGW08T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

SGP15N120

Abstract: SGW15N120 Q67040-S4274 Q67040-S4275 Q67040-S4276 SGB15N120
Contextual Info: SGP15N120 SGP15N120 SGW15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution

vhdl code for manchester decoder

Abstract: easy examples of vhdl program vhdl code manchester encoder vhdl manchester vhdl code for accumulator Verilog implementation of a Manchester Encoder/Decoder
Contextual Info: Application note Philips Semiconductors VHDL Easy Design Flow for Philips AN078 INTRODUCTION This note provides the steps for using MINC<1 VHDL Easy and Philips Semiconductor’s XPLA Designer tools to compile a digital design into Philips’ Complex Programmable Logic Devices

Contextual Info: 7 TH 5 DRAWING C O P Y R IG H T IS 19 U N P U B L IS H E D . R ELE A S E D BY AMP IN C O R PO R A T E D . ALL FOR P U B L IC A T IO N R IG H T S 6 5 ,1 9 RESERVED . D C . 1 00 TYP A AMP 4805 REV 1 0/93 I 3 0 -JUL-02 15:16:54 amp 1641¿/home/amp!6412/docmod

Contextual Info: 8 THIS C DRAWING IS C O P Y R IG H T 19 7 U N P U B L IS H E D . RELEASED BY AMP A AMP i 3 0 - JUL-02 4805 REV 10/93 15:15:03 amp 1641¿/home/amp!6 4 1 2/docmod IN CO RP O RA TE D. ALL FOR PUBLICATION R IG H T S R ES ER V ED . ,19 6 5 4 2 3 DI ST LOG REVISIONS

1EN61-6

Abstract: MIL-W-5088 MS25081C6 1EN61 FAA-PMA 010of MIL-PRF-8805 MS25081-c6
Contextual Info: FO-55 _±_ RE V 32 HONEYWELL PART NUMBER I E N6 DOCUMENT C H A N G E D BY 0011000 KR CHECK 07FEB05 AK F A A - P MA NOTES - CORROSION R ES IS T A N T STEEL ENCLOSURE 2 - SW ITCH S E A LE D PER M I L - R R F - 8 8 0 5 SYMBOL 4 3 - C I R C U I T D I A G R A M , C A T A L O G L I S T I N G , F E D . MFG. CODE ,

U77-1163-2010P

Contextual Info: 8 7 4 5 6 3 2 1 REVISIONS REV DESC RIPTIO N DATE A PROPOSAL AUG06/09 B PLATING OPTION CONFIGURATION AUG17/09 SFP+ PRESS FIT CAGE P/N: U77-1163-2010P IF ORDERED SEPERATELY APPRD D D 16.26 15.01 SFP+ PRESS FIT CAGE (P/N: U77-A1639-X001 IF ORDERED SEPERATELY)