07FEB05 Search Results

1EN61-6

Abstract: MIL-W-5088 MS25081C6 1EN61 FAA-PMA 010of MIL-PRF-8805 MS25081-c6
Contextual Info: FO-55 _±_ RE V 32 HONEYWELL PART NUMBER I E N6 DOCUMENT C H A N G E D BY 0011000 KR CHECK 07FEB05 AK F A A - P MA NOTES - CORROSION R ES IS T A N T STEEL ENCLOSURE 2 - SW ITCH S E A LE D PER M I L - R R F - 8 8 0 5 SYMBOL 4 3 - C I R C U I T D I A G R A M , C A T A L O G L I S T I N G , F E D . MFG. CODE ,

HD-20

Abstract: 5747840-6 sh 94v-0 TYCO ELECTRONICS 5747840-6
Contextual Info: n 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - n 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC GP ALL RIGHTS RESERVED. DIST REVISIONS 00 LTR DATE DWN APVD 07FEB05 JG SB DESCRIPTION RELEASED PER EC 0S 13 - 0 6 7 1 - 0 4 30.81+0.38 [1 .21 3 + .01 5]

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - LOC ALL RIGHTS RESERVED. AJ DIST REVISIONS 17 LTR C DESCRIPTION REVISED PER EC O S 1 4 - 0 4 7 4 - 0 4 DATE DWN APVD 07FEB05 BM JL ZINC PER Q Q - Z - 3 6 3 .

Si1407DL

Contextual Info: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1417DH

Contextual Info: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1413DH

Contextual Info: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1426DH

Contextual Info: SPICE Device Model Si1426DH Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305DL

Contextual Info: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1400DL SPICE Device Model

Abstract: Si1400DL
Contextual Info: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1302DL

Contextual Info: SPICE Device Model Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305DL

Contextual Info: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TYCO ELECTRONICS 5747840-6

Abstract: HD-20
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR A REVISED PER DESCRIPTION DATE DWN EC 0-06-028339 3 /J A N /0 7 APVD ZMR EDB SO. 81 ±0.38 1 .21 3 + .01 5;

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: TFDU5307 Vishay Semiconductors Fast Low Profile 2.5 mm Infrared Transceiver Module (MIR, 1.152 Mbit/s) for IrDA Applications Description The TFDU5307 is an infrared transceiver module compliant to the latest IrDA physical layer standard, supporting IrDA speeds up to 1.152 Mbit/s (MIR) and

Si1406DH

Contextual Info: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1039X

Contextual Info: SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1400DL

Contextual Info: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1303DL

Contextual Info: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

2N7002E

Contextual Info: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1413DH

Contextual Info: SPICE Device Model Si1413DH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1417DH

Contextual Info: SPICE Device Model Si1417DH Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT D 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ALL RIGHTS RESERVED. IDENTIFICATION N U M B ER 10 FOR MAGNET WIRE RANGE C 0 .5 0 8 + 0 .0 2 5 [. 020 + . 00 1] 16.00 [.6 3 0 ] 3 .8 1 [.1 5 0 ] l= Ç\

Contextual Info: TFDU5307 Vishay Semiconductors Fast Low Profile 2.5 mm Infrared Transceiver Module (MIR, 1.152 Mbit/s) for IrDA Applications Description The TFDU5307 is an infrared transceiver module compliant to the latest IrDA physical layer standard, supporting IrDA speeds up to 1.152 Mbit/s (MIR) and

71500

Abstract: Si1405DL
Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range