JS 2204 Search Results

B21G

Contextual Info: JL 12 11 8 10 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. H MISSING NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 17 LAST NO. USED 72 \js— o — or "O— o — EL/

Contextual Info: 0.4 ( S jS tV JL X - x - JL O n s - fflS n ) (OFF-CENTER DIMENSION BETWEEN CONTACT R05ITI0N & SOLDER TAIL CENTER LINE) iiuii ikill i u r gfC NOTES 1 Ouo j _ - j T . \j 5. □ r~_ r- r- A TQ T AAA TVS ? ? ? e! T ^L •■ 717L

UPA79C

Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ

se5020

Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Contextual Info: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES

2SB1116

Abstract: 2SD1616 2SD1616A PA33
Contextual Info: NEC l i r / \ T X J , S ilic o n 2 N P N l S J f2 '> U □ > D h ^ 1 6 1 6 , 1 T r a n s is t o r s 6 1 6 A ^ NPN Silicon Epitaxial T ra n s is to r Audio Frequency Pow er A m p lifie r M edium Speed S w itching ^ /F E A T U R E S * H B @ /P A C K A G E DIMENSIONS

cd 1619 CP fm radio

Abstract: RBS 2206 UAA 1006 cd 1619 CP fm radio RECEIVER NVR 1550 UAA 1004 DP utc 2411 RBS 2302 RBS 2204 ECU 206 7.4.5
Contextual Info: MOTOROLA Order th is document as AN495/D SEMICONDUCTOR APPLICATION NOTE AN495/D RDS decoding for an HC11 -controlled radio P. Topping, Motorola Ltd, East Kilbride, Scotland Introduction This application note describes, and lists the software of, the RDS aspects of the HC11 radio controller described

KJE 17 transistor

Abstract: transistor k 2628 kje t2 KJE u5 transistor et 454 sd774 l0534 pj 0286 n 332 ab KJE transistor
Contextual Info: SEC j h = 7 ? Silicon T ra n sisto r 2SB734 + U h =7 > i> 7 5 PN P Silicon Epitaxial Transistor Audio Frequency Power Amplifier o YA o T "Pj 7°^oo i 7 > Unit : mm c- \ , ft i t EE T"t~ o P T = 1 .0 W, V C E 0 = — 50 V b =i> 7°') 9 > 9 Q 2SD 774 P A C K A G E D IM EN SIO N S

2SC3616

Abstract: PA33 ScansUX881
Contextual Info: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA

pt 4115

Abstract: 5566A 2SD773 2SD77 2SB733 T108 1i03 PT10 resistance T3CS transistor b 1666
Contextual Info: SEC ' > < ; □ > h 7 , =7 9 S ilico n T r a n s is to r m ^ T tx r x 2SD773 N P N ir fc i ^ + U =l > h ^ X ^ NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier O K - 9 - 7 ' J V y i t i t , i] -t y W W ± ± itiM * h T u- S i<7 -t- ? - K 7 'f 7\

MFX2

Abstract: capacitor x2 mkt x2 82JFX 2SA222
Contextual Info: AC - CAPACITORS F 1772-2200 / 2204 / 2215 / 2230 / 2260 2263 / 2290 / 2291 / 2960 / 2961 Suppression Capacitors Class X2 AC 275 V MKT Ordering Code* Lead Length X in mm 4-1 F 1772-XXX-2204 6 -1 F 1772-XXX-2200 15-1 F 1772-XXX-2215 30+5 F 1772-XXX-2230 Reference Standards:

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

2SK470

Abstract: 2sk47 btt4
Contextual Info: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —

2SC2718

Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886
Contextual Info: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS

tcm Bell-202

Abstract: MX614P 744 202 MX614DW
Contextual Info: MX-CDM, INH. MiXed Signal ICs DATA BULLETIN MX614 Bell 202 Compatible Modem PRELIMINARY INFORMATION Features Applications • • Low Voltage Operation 3.3V to 5.0V • Low Power Operation 1200bps half duplex Bell 202 Compatible Modem • Optional 1200bps Data Retiming Facility

Contextual Info: SIEMENS Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 1 ho 3 Rd-o o-^ EHA07002 Maximum Ratings Parameter Symbol

MB111

Abstract: F108 2SC2223 T108 hx- je
Contextual Info: m e m ^ T /S r ix h i s i j A N = 7 9 S ilico n T ra n sisto r 2SC2223 P N X 1) ra M l Àiè V = 7 > ÍS f fl NPN Silicon Epitaxial Transistor High Frequency Amplifier »«/FEA TU RES fl-JfcEI/PACKAGE DIMENSIONS Unit : mm) o f ê / J ^ O ' 1) -/ KI Cf f l ¿ L t t l f t .

2SK426

Abstract: marking x26 2SK42 9012 transistor
Contextual Info: NEC j m^Tivrx A J u n c tio n Field E ffe c t T ra n s is to r 2SK426 N ^ - t * u =i h - ? > i > x ? N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier 4 $ * / FEATURES ftW M /P A C K A G E DIMENSIONS Unit : mm o i& s t ^ - e t o

2SA1396

Abstract: 2SC3568 T108 TS33
Contextual Info: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS

BC858W-A

Abstract: BC856W BC856W-A BC856W-B BC857W BC857W-A BC857W-B BC857W-C BC858W
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC856W/7W/8W EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • For Complementary With NPN Type BC846W/847W/848W. DIM A B C D E G H J K L M N MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

tw23

Abstract: tlsr Telefunken Electronic
Contextual Info: i 17E D TELEFUNKEN ELECTRONIC • fi'téOO'ïb O O O ' I O ' I S T ■ AL GG TLS.520. TniLiiFUMKIM electronic _ CrtaUve Technologies T-W-te Symbol LED's —0 5 mm in tinted top diffused package Color Type Technology Red TLSR 620. GaAsP on GaAs

2N5415 REPLACEMENT

Abstract: 2N5416 REPLACEMENT nasa oscilloscope mercury relay clare mercury clare 851 2N5415
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 Oct 95. INCH-POUND MIL-S -19500/485E 18 April 1995 SUPERSEDING UI'“ T t -_ C _ 1i^^vv/nuju Q R A A //. QC r\ 15 November 1994 MILITARY SPECIFICATION

ERA18-02

Abstract: ERB06 ERB43-04 ERA22-02 ERA22-04 ERA22-06 ERA22-08 ERA22-10 ERA34-10 ERA91-02
Contextual Info: Fast Recovery Diodes Single package Ratings and characteristics Type Maximum rating V rrm lo * 1 If SM * 2 Volts Amps. Amps. ERA34-10 ERA91-02 1000 200 ERA22-02 200 ERA 22-04 400 600 ERA22-06 ERA22-08 1000 ERB 43-04 40 0 ERB43-06 600 ERB43-08 ERA38-04 400

Contextual Info: <$Emi- 2onclu<2toi ^Products., Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF486 The RF Line NPN SILICON RF POWER TRANSISTOR . . designed primarily for application as a high-power linear

Contextual Info: 7SDDSD0 RoJ JDi Co V eRTER W o rld 's M o s t A d va n ce d Ultra H igh Density DC-DC Converters DDDD3SÔ G73 DC-DC Converters, 50-60 Watt Family Evaluation Boards A vailable U p to 6 0 W atts 4 8 a nd 3 0 0 V D C Input DESCRIPTION PicoVerter modules are high density DCDC converters designed for use in tele­