2N5415S Search Results

P008B

Abstract: 2N5415S
Contextual Info: 2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

Contextual Info: 2N5415S+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5416

Abstract: 2N5415
Contextual Info: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: ¿ 888888888 |p M iwiHBBffi smsssBPe .rfHHHHHHHHMh. m1 itittnnnnn hhhhhhk-. iiHiiftBHhr. Data Sheet No. 2N5415S o % f# 1 l $ 1 I cI ^88888 sdL SEMICONDUCTORS G eneric Part Num ber: 2N5415S Type 2N5415S G eom etry TBD P olarity PNP Q ual Level: Pending REF: M IL-P R F -19 5 0 0 /4 8 5

Contextual Info: 3QE » • 7 ^ 2 1 5 3 / Q03123S 5 ■ S C S - T HH OO M MSON ¡H[i TriH]©lMDOi ,_ 2N5415S S G S-THOMSON HIGH-VOLTAGE AMPLIFIER T DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP trans­ istor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications.

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415S – 2N5416S Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant commercial version Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a

2N5416

Abstract: 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S
Contextual Info: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N5415S

Abstract: power amplifier TRANSISTOR
Contextual Info: Data Sheet No. 2N5415S Generic Part Number: 2N5415S Type 2N5415S Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/485 Features: • General-purpose low power amplifier transistor which operates over a wide temperature range. • Housed in TO-39 case.

Contextual Info: 2N5415S+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5415S+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n2222 sot-23

Abstract: 2N2369 SOT-23 2N2907 SOT-23 bcy79 sot23 BC461 2N5322 bc107 sot23 SOT-23 2N2222 2N3700 sot23 2n2222a SOT223 So642
Contextual Info: TRANSISTORS SMALL SIGNAL TO-39 TO-18 SOT-223 SOT-23 NPN GENERAL PURPOSE TRANSISTORS - TO-18 hFE @ IC VCEO VCER* VCE sat @ IC / IB Type (V) min/max (mA) 55 50/– 50 30 40 80 80 100/300 100/300 40/– 100/300 150 150 150 150 max fT ts Ptot Also available min

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415UA – 2N5416UA Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415UA and 2N5416UA epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. The UA package is hermetically sealed and

2N5415 REPLACEMENT

Abstract: 2N5416 REPLACEMENT nasa oscilloscope mercury relay clare mercury clare 851 2N5415
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 Oct 95. INCH-POUND MIL-S -19500/485E 18 April 1995 SUPERSEDING UI'“ T t -_ C _ 1i^^vv/nuju Q R A A //. QC r\ 15 November 1994 MILITARY SPECIFICATION

transistor U4

Abstract: 2N5415 2N5416U4
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

2N3820

Contextual Info: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

SO930

Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
Contextual Info: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415 – 2N5416 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415U4 – 2N5416U4 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415U4 and 2N5416U4 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longleaded TO-5, short-leaded TO-39 and low profile UA packaging.

2N3819 MOTOROLA

Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
Contextual Info: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup­

2N5416UA

Abstract: 2N54115 2N5416U4 2N5415UA 2N5416 2N5415 MARKING SMD pnp TRANSISTOR ec 2N5416S 2N5415S 2N5415 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 1 September 2010. MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER