JRM 45 Search Results

U125D

Abstract: c5856 T1-6TCUP U12B SMA200UP C71B RC0603 U740 AD9861 CC0805
Contextual Info: 4 3 1 2 REVISIONS D DVIN1 TB3 L9 1 TP23 RED JP4 LC0805 DRVDD BCASE TB3 VAL C11 DNP 16V BCASE C12 10UF 10V CC0805 C20 B Revision of pluto64dual Rev A. 0306.04 DATE APPROVED JRM C alter component package JP50, C43. misc labeling. spread J11,J12 0308.18 JRM D

DA12 16

Abstract: SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC
Contextual Info: 4 3 1 2 REVISIONS JP9 DVDD JP15 RXEN_SYNC JP14 D REV DESCRIPTION DATE APPROVED B Customer Version NO Socket 0307.09 JRM D JP58 AWG_RXTXEN 1 TX0 2 RX5 3 RX4 4 RX3 1 DVDD RX2 2 AWG_TXSYNC RX1 3 DSP_RXTXEN RX0 4 10K R16 RC0603 10K R8 RC0603 R9 33 RC0603 JP1 JP2

jrm 45

Contextual Info: REV. B MATERIAL AND DESCRIPTION SEE ECO G M - 10790 DATE BY 1 1 /2 4 /9 9 JRM FINISH JACK HOUSING: CRES 3 0 3 PER ASTM A 4 8 4 AND ASTM A 5 8 2 OR ASTM A 5 5 5 AND ASTM A 581. GOLD PLATE PER MIL—G—4 5 2 0 4 SOCKET CONTACT: BERYLLIUM COPPER PER ASTM B 196 A N D /O R ASTM B 197.

022 JRC

Abstract: JRC 022 74221 74423 ctct
Contextual Info: — 230 — 74423 Dual R e trig g e ra b le S ingle S h o t to td CCfe zB ía. i2j^nininininiriLf •A I 1 IQ 20 2 Jrm/ GMO ?a m OA, B í O X * * f t * I HS;3C LT v^ ¿ è CLR t mm H i z i x i v otw= 0.45RT.CT f 5 k S < R l < 2 6 0 k ^ \ lOOOpFäCr RCTRIQGER PULSE

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

k2038

Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
Contextual Info: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)

jrm 45

Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
Contextual Info: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1

FST10125

Contextual Info: D im . Inches M illim e te r M inim um M ax im u m Detail 6 -r Detail B MicrosemI Catalog Number FST10125* FST10130* FST10135* FST10140* FST10145* I Baseplate; Nickel plated copper; A C E F G H J K L M N P 1.995 0.495 0.990 2.390 1.490 0.120 M inim um 2.005

F103M

Contextual Info: YTF633 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jr-M O Sn HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR Unit in urn DRIVE APPLICATIONS. 10.3MAK. f- ¿3.610.2 FEATURES: •Low Drain-Source ON Resistance :

YTFP453

Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: FIELD EFFECT TRANSISTOR YTFP453 SILICON N CHANNEL MOS TYPE jr-M O S n HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR Unit in aa 1&9MAX. DRIVE APPLICATIONS. 0 3 .2 ± a s ¿ & Æ FEATURES:

YTF532

Contextual Info: FIELD EFFECT TRANSISTOR YTF532 SILICON N CHANNEL MOS TYPE jr-M O S n HI GH S P E E D , H I G H CURRENT SWI T C H I N G A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS CHOPPER R E G U L A T O R , D C - D C CON V E R T E R AND HOTOR Unit DRIVE A PP L IC A TI O NS .

QM20TD-9

Contextual Info: I MITSUBISHI TRANSISTOR MODULES ! QM20TD-9 | MEDIUM POWER SWITCHING USE j INSULATED TYPE I I QM20TD-9 • te • VCEX • hFE Collector current. 20A j Collector-emitter voltage. 500V j DC current gain.75 j

Contextual Info: E R D 8 - 0 4 I 1 5 A SCHOTTKY BARRIER DIODE ’ Features • 1&Vk Low VF Super high speed sw itchin g. im s m e Connection Diagram High reliability by planer design • E jiH : Applications High speed pow er sw itchin g. Maximum Ratings and Characteristics

YTF542

Contextual Info: FIELD E F F E C T T R A N S IS T O R SILICON N CH A NN EL M O S T Y P E jr-M O Sii H IG H S P E E D , H I G H C URR EN T SW ITCHIN G A P P L I C A T I O N S . IN D U S T R I A L A P P L I C A T I O N S C H O PPER R E G U L A T O R , D C - D C C ON VER TER AND HOTOR

Contextual Info: MITSUBISHI LSIs M5M5178P,J-35,-45,-55 6 3 5 3 6 B I T 8 1 9 2 - WORD BY 8 -B IT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h is is a f a m ily o f 8 1 9 2 w o rd b y 8 - b it static R A M s , fa b r i­ cated w ith th e high p e rfo rm a n c e C M O S silicon gate M O S

1SV196

Abstract: 1SV80 isv55 1SS241 1sv128 ISS364 isv77 1S2186 1SS238 1SS364
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

k 2057

Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
Contextual Info: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805

1SV196

Abstract: 1sv128 1SV156 ISV80 MA555 1S2186 1SS238 1SS241 1SS364 1SV26
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

1sv196

Abstract: 1SV80 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

Contextual Info: Snapak 205 JAE/JRE/JLE Magnetic Circuit Breakers 207 Single-Pole Circuit Breakers 208 Multi-Pole Circuit Breakers 209 Parallel Multi-Pole Circuit Breakers 210 Configurations 212 Operating Characteristics 214 Delay Curves 217 Decision Tables 218 JAE/JRE/JLE MAGNETIC CIRCUIT BREAKERS

PI2EQX3211CM

Contextual Info: PI2EQX3211CM 3.2Gbps 2 Differential Channel Serial ReDriver with Equalization & Output Emphasis Description ÎÎSATA s/m output drive Pericom Semiconductor’s PI2EQX3211CM is a low power, signal re-driver. The device provides programmable equalization, by

Contextual Info: PI2EQX4501 4.5Gbps x1 Lane Serial Re-driver with Built-in Equalization & De-emphasis Features Description • Supports data rate up to 4.5Gbps on each channel • Adjustable Transmiter De-Emphasis & Amplitude • Adjustable Receiver Equalization • One Spread Spectrum Reference Clock Buffer Output

PS8818

Abstract: transmiter PI2EQX3201 PI2EQX3201ZFE ZF36
Contextual Info: PI2EQX3201 3.2Gbps 2 Differential Channel Serial Re-driver with built-in Equalization and De-emphasis Features Description • Two 3.2Gbps differential signal • Adjustable Transmiter De-Emphasis & Amplitude • Adjustable Receiver Equalization • One Spread Spectrum Reference Clock Buffer Output

PI2EQX4401

Abstract: PI2EQX4401ZFE ZF36
Contextual Info: PI2EQX4401 2.5Gbps x1 Lane Serial PCI Express Repeater/Equalizer with Clock Buffer Features Description • One high-speed PCI Express lane • Adjustable Transmiter De-Emphasis & Amplitude • Adjustable Receiver Equalization • One Spread Spectrum Reference Clock Buffer Output