JE 3055 Search Results

2955T

Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

Katalog tesla tranzistor

Abstract: KD502 KD3055 KD617 KU607 KU612 Tesla katalog KD602 kd 617 kd607
Contextual Info: T E U f • - f l J P i A . f E L E K T R O N IC K É € K O N C E R N S O U C Á S T K Y R O Z N O V Kremikové vÿkonové tranzistory fill* KC31S VOO331 ft* » .* K03773 T30 32> U U * K0336 VQ0321 I I I IA If« » KOWt MÍO 32' K0338 VQ0 3SI ic c a f li

JE2955

Abstract: JE3055 mje3055 127 case data MJE295ST MJE2955 JE2955T JE3055T lm 3904 2955T TO-225AB
Contextual Info: MOTOROLA SC 12E 0 | L3b7HS4 □Qâ53Mc1 1 | XSTRS/R F r-3 3 - 5 PN P MOTOROLA r - î î - a i MJE2955, MIE2955T SEMICONDUCTOR NPN TECHNICAL DATA MJE3055, MJE3055T 10 A M P E R E COM PLEM ENTARY SILICO N PLASTIC POWER TRAN SISTO RS . . . designed for use in general-purpose amplifier and switching

2N5979

Abstract: 2n5978 2N5985 2N5984 2SB585 2SB587 2SB588 2SB5 2SB568 st 2n3055
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S _ _ 3055-1.0 SL486 INFRA RED REMOTE CONTROL PREAMPLIFIER T h e SL486 is a h ig h g ain p re a m p lifie r de sig n e d to fo rm an in te rfa c e betw een an in fra -re d re ce ivin g d io d e and the d ig ita l

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

fuse smd code ud

Abstract: kc-1206 EB smd code marking tantalum capacitor cf750 2824 footprint dimension JK-110 CAP SMD 2.2uF 50V 10 CERAMIC X7R 0603 TANTALUM smd capacitor 685 35K 1808 footprint IPC Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors Commercial Grade Surface Mount Multilayer Ceramic Chip Capacitors One world. One KEMET. Surface Mount Multilayer Ceramic Chip Capacitors Commercial Grade Table of Contents Page Why Choose KEMET. 4

capacitor 226 35K 022 electrolytic

Abstract: 3216 footprint IPC TANTALUM smd capacitor 685 35K KC-1206 BB GP 031 smd LD33 capacitor 476 35K 026 2824 footprint dimension MIL-STD-1285 Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
Contextual Info: Surface Mount Multilayer Ceramic Capacitors Commercial Grade Surface Mount Multilayer Ceramic Chip Capacitors One world. One KEMET. Surface Mount Multilayer Ceramic Capacitors Commercial Grade Table of Contents Page Why Choose KEMET. 4

MV601

Abstract: stabiliser circuit diagram gyrator Plessey sl486 SL486 lowvoltageoperation
Contextual Info: GEC PLESSEY ISE M IC O N D U C T O R S t 3055-1 0 SL486 INFRA RED REMOTE CONTROL PREAMPLIFIER T h e SL486 is a h ig h gain p re a m p lifie r de sig n e d to fo rm an inte rfa c e betw een an in fra -re d re ceiving d io d e and the d ig ita l in p u t o f re m o te c o n tro l re ceiving circu its. T h e d evice

4233A

Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Contextual Info: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8

circuit diagram of 2N3055 series voltage regulator

Abstract: 2N3055 diagram with power supply 2N3055 series voltage regulator 2n3055 circuit diagram 2N3055 TO-220 N2N3055 2N3055 TRANSISTOR 2n3055 voltage regulator L7912ACV 2N3055 power supply circuit
Contextual Info: L7900AC Series LINEAR INTEGRATED CHRCUITS PRELIM IN A R Y DATA ± 2% NEGATIVE VOLTAGE REGULATORS • O UTPUT C U R R E N T UP TO 1.5A • O U T P U T V O L T A G E S O F -5 ; -5 .2 ; - 8 ; - 1 2 ; -1 5 ; -1 8 ; -2 0 ; -2 4 V • • • T H E R M A L O V E R LO A D PROTECTION

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

3055 rle

Abstract: VEB M ik ro e le k tro n ik U1600 Scans-048 BV EI 3055 M9152 DSAGER00027 0402092 st7255
Contextual Info: pz l f i N e tz tra n sfo rm a to re n N e tz tra n s fo rm a to re n w e rd e n in den ve rsch ie d e n ste n A u s fü h ru n g e n g e fe rtig t, so daß w i r a u f G ru n d des u m fa n g re ic h e n P ro d u k tio n s p ro g ra m m e s in d e r Lage sin d , h oh en

diode SY 192

Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
Contextual Info: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«

L123 regulator

Abstract: 3055 transistor 2n 3055 transistor l123 L123 voltage J1306 10-17V RS 306-005
Contextual Info: Issued J u ly 1983 m Data Library J1306 Voltage regulators L123 metal can L723 DIL Stock numbers 305*440 and 306-005 Absolute maximum ratings TO-100 DIL 40V Continuous voltage from V+ t o V - 40V Input/output voltage differential 150mA M axim um output current

Halbleiterbauelemente DDR

Abstract: diode BZW 70-20 VEB mikroelektronik Datenblattsammlung mikroelektronik DDR aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung mikroelektronik applikation information applikation mikroelektronik "halbleiterwerk frankfurt"
Contextual Info: 9 ¡M i n M W V S I I V I S N l l ¥ a Die vorliegenden Datenblätter dienen als Informationsmaterial für Geräteentwickler und Konstrukteure, Sie beinhalten Informationen über Halbleiterbauelemente des in "den Listen elektronischer Baulemente eingestuften Sortiments.

SP802512H-03

Abstract: SP802512M-03 BP802524M-03 SP802524M-03 BP802524H-03 BP8-02 sp802524h SP8025121-03 80X80X25 SP802524H-03
Contextual Info: DC 8025-03 SIZE : 80x80x25m m 3.15“x3.15"x0.98M C O N S T R U C T IO N : G la s s fib e r r e in fo r c e d p lastic: Im p eller a n d h o u sin g PBT a r e UL 9 4 V -0 ra tin g O P E R A T IN G TEM PERATURE : Ball b e a rin g - 30*0 t o + 75*C S le e v e b e a rin g

BD512 mosfet

Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
Contextual Info: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe

3055 power transistor

Abstract: voltage regulator IC 723 723p
Contextual Info: Precision Negative Regulator SG1511 1SG3511 Description T h is m o n o lith ic v o lta g e re g u la to r is d e sig n e d fo r n eg ative Absolute M axim um Ratings a p p lic a tio n s as a c o m p le m e n t to th e p o p u la r SG 723 In p u t v o lta g e

mje3055

Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
Contextual Info: MJE3055 SILICON MJE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —