J3 TRANSISTOR Search Results

1117 S Transistor

Abstract: TOSHIBA bat Transistor b 1117
Contextual Info: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode

GT10J312

Abstract: CP20A
Contextual Info: GT10J312,GT10J312 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 0 J3 1 2 , G T 1 0 J3 1 2 ( S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode

CHT9013PT

Abstract: h 033 marking J2 sot-23 MARKING J3 SOT-23 J1 TRANSISTOR J3 SOT-23 transistor SOT23 J1
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT9013PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)

CHT9013GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)

Contextual Info: BF491j2 j3 PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS

clare mercury relay

Abstract: MJ15022 equivalent mj15024 HGP-1045 MJ15022 TA9166B i30b RCA9166A RCA9166B TA9166A
Contextual Info: G E SOLI» STATE 387 5081 G E SOLID ÏÏÏ S T AT E DE J3Ö7SDÖ1 □□174ûti 1 01E 17486 D General-Purpose Power i ? “ RCA9166Ä, RCA9166B, MJ15022, MJ15024

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)

s9013 transistor

Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contrans V17131

Abstract: contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1
Contextual Info: Trennschaltversta¨rker V17131-16 2 Kana¨le, 2 x Transistorausgang J3 J6 • Anschluß Initiatoren, Schaltkontakte, Na¨herungsschalter HB Contrans I A B & ■ galvanische Trennung zwischen Einga¨ngen, Ausga¨ngen und Energieversorgung ■ Drahtbruch- und Kurzschlußu¨berwachung

S9013 SOT-23

Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

S9013 J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

113 marking code PNP transistor

Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3

TOP3 package

Abstract: 2SD917 TOP-3 package
Contextual Info: PANASONIC INDL/ELEK -CIO 1SE D • bTBSñSa 0010453 5 Silicon Triple Diffused Planar Transistor T-J3-/3 2SD917 NPN TOP-3 Package 2SD917 (NPN) High Power TV Deflection Absolute Maximum Ratings (Ta=25°C) Item Collector-Base Voltage Collector-Hmitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

TRANSISTOR BI 187

Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Contextual Info: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage

2SK797

Contextual Info: Ôi|b427S2S 6427525 N E C 0Dlflci4S û ELECTRONICS 98D INC 18942 ~ C ~ J3 ~ r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D ESC R IPTIO N The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATU RES

MMBT2369

Abstract: MMBT2369A MMPQ2369 MMPQ3725
Contextual Info: This Surface Mount Transistors Material n~ In a fc-" fc-1 UJ O til Discrete POWER & Signal Technologies National Semiconductor' Surface Mount Transistors Copyrighted □ a a -C NPN Saturated Switches JE -0 ui By o J3 fc-1 Device No. SOT-23 Mark V Case Style

2N5449

Abstract: 2N5447 2N5448 2N5450 BOX69477 CEB npn
Contextual Info: 2N5447 2N5450 th ro u g h COMPLEMENTARY SILICON GENERAL- PURPOSE AF TRANSISTORS •' -, J3= h. . * s ì ,;:;:;'.: & 4« CASE TO-92F THE 2N5447» 2N5448, 2N5449, 2F5450 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE MEDIUM POWER AMPLIFIER APPLICATIONS. THE 2N5447, 2N5448 ARE PNP

BD242B

Abstract: BD242C BD242S 17533 BD241 BD241A BD241B BD241C BD242 BD242A
Contextual Info: oï 3875081 G E SOLID ß F j3 fl7 S 0 fll 0017533 L STATE 0 1~E 1 7 5 3 3 D Pro Electron Pow er Transistors BD242, BD242A, BD242B, BD242C File N u m b e r 672 Epitaxial-Base Silicon P-N-P

MMBT2222A

Contextual Info: This I tr Material In □ . m tr1 Discrete POW ER & Signal Technologies LM National Semiconductor” Surface Mount Transistors LU Copyrighted a a xa -C J3 tr By Ln —3 a NPN General Purpose Amplifiers and Switches V D evice No. SOT-23 Mark M M BT100 (N1)

2N5683

Abstract: PNP 2N5684 2N5685 TQ-204M 419AR 2n5684 motorola 2N5683 motorola
Contextual Info: MOTOROLA SC 1 EE D I XSTRS/R F I t.3b?254 Q0ÖMS57 3 r-33-J3 r - 3 3 " / ^ PNP MOTOROLA 2N5683, 2N56S4 SEMICONDUCTOR NPN TECHNICAL DATA 2N5685, 2N5686 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS 60 -8 0 V O LT S

2SC5307

Contextual Info: TO SH IBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V^ e o -^OOV • Low Saturation Voltage •• V/"cm ' = 0 A\T Cy -Tjvr n- s Ì I n = 9.0m A Tn -J3 0.4 ±0.05

2N5433

Contextual Info: SDE D • MÔELÛÔfi OOOGBÎH 23T « I F C 7 - J3 S*- 2 - S_ INTER F E T ^ R ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ N 5 4 3 2 fc2N5433fc2N5434 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at 25°C free-air temperature. • LOW ON RESISTANCE SWITCHES

transistor t05

Abstract: RZ3135B28W tRANSISTOR 2.7 3.1 3.5 GHZ cw NPN transistor 458
Contextual Info: 1 ^ 3 3 - J3 Philips Components RZ3135B28W Data sheet status Product specification date of issue June 1992 NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711005b ODMbSTO bflH ■ ÎPHIN D E S C R IP T IO N A P P L IC A T IO N