J 115 MOSFET Search Results

Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW

AN7254

Abstract: AN7260 ITF87052SVT SC-95 TB370 0190-S
Contextual Info: ITF87052SVT interrii J a n u a ry . Data Sheet PRELIMINARY 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET m File Num ber i 4800.2 Features • Ultra Low On-Resistance ‘ rDS ON = 0-115£2, v q s = -4 .5 V Packaging ‘ rDS(ON) = 0-120£2, v q s = -4 .0 V

AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable

Contextual Info: MMBT1031 115 mA, 60V, RDS on =7.5ȍ Elektronische Bauelemente Small Signal MOSFET RoHS Compliant Product SOT-23 N–Channel A FEATURES L 3 . Low on-resistance B S Top View . Fast switching speed 1 . Low-voltage drive V G Drain . Easily designed drive circuits

S2N7002

Abstract: 702 mosfet
Contextual Info: S2N7002 115 mA, 60 V, RDS ON = 7.5 Ω Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES L 3 Pb-Free Package is Available 3 PACKAGING INFORMATION 1 1 K 2 E 2 Drain

J 115 mosfet

Contextual Info: SGM2310A 5 A, 60 V, RDS ON 115 mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION A The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient

9973a

Abstract: J 115 mosfet SSD9973A
Contextual Info: SSD9973A N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS ON 115 mΩ mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD9973A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

Small Signal MOSFET

Contextual Info: S2N7002W 115 mA, 60 V, RDS ON = 7.5 Ω N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ♦ ♦ ♦ ♦ ♦ ♦ SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance

SMG2310A

Contextual Info: SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS ON =115 mΩ Elektronische Bauelemente sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the

2N7002 MARKING

Abstract: 2N7002 MARKING 702 2N7002
Contextual Info: WEITRON 2N7002 Small Signal MOSFET N-Channel 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0MΩ) VDGR 60 V Drain Current

2N7002T

Abstract: Small Signal MOSFET
Contextual Info: 2N7002T 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)

RFK30N12

Abstract: C039 18198 RFH30N12 RFH30N15 Scans-00121260
Contextual Info: 3 8 7 5 0 8 T gT E ~ S O L Í D Standard Power MOSFETs 3 ñ 7 5 D ñ i DI G E S O LI » STATE STATE 0 1E o a i a n 3 18193 a D iT - ^ - '/S ’ _ RFH30N12, RFH30N15 File N u m b e r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

Contextual Info: 2N7002DW Dual N-Channel MOSFET 6 5 1 Features: * We declare that the material of product are Halogen Free and compliance with RoHS requirements. * ESD Protected:1000V 2 4 3 SOT-363 SC-88 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified)

0203S

Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Contextual Info: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

Contextual Info: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT68P20T IXTH68P20T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002SLT1G N–Channel SOT–23 3 • We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60

Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR68P20T RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTR68P20T

Abstract: DS100375 DS-100-375
Contextual Info: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

k72 diode

Abstract: mosfet k72 K72 sot k72 transistor transistor k72 702 marking code transistor marking k72 k72 device marking marking k72 2N7002W
Contextual Info: 2N7002W 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free N–Channel SOT–323 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)

ixfx420n10t

Abstract: IXFK420N10T MOSFET 60V 210A PLUS247
Contextual Info: Advance Technical Information IXFK420N10T IXFX420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.6mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

J 115 mosfet

Abstract: sot-23 Marking 7002 2N7002 MARKING pin diagram of MOSFET 7002 SOT-23 mosfet 2n7002 sot-23 body marking A 4 2N7002 2N7002 Die Specification Small Signal MOSFET
Contextual Info: 2N7002 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)

Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK360N15T2 IXFX360N15T2 150V 360A Ω 4.0mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

Contextual Info: Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFK420N10T IXFX420N10T 100V 420A Ω 2.6mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS