15N120C Search Results

Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

15N120BD1

Abstract: 15N120 15N120CD1 IXGT15N120BD1
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C

Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

RGE 17-18

Abstract: TO220-4 weight
Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM

15N120BD1

Abstract: 15N120CD1 IXGT15N120BD1
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

15N120CD1

Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
Contextual Info: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR

Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM

oni350

Abstract: IXGA 15N120C 15N120C
Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat =1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM

IXGT15N120BD1

Abstract: 15N120BD1
Contextual Info: Advanced Technical Information VDSS Low VCE sat IGBT with Diode High Speed IGBT with Diode IXGH/T 15N120BD1 IXGH/T 15N120CD1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES

Contextual Info: IGBT IXGH 15N120C VCES = 1200 V = 30 A IXGT 15N120C IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Lightspeed Series Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW

Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V IC25 = 30 A 3.8 V VCE sat = tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

15N120C3

Contextual Info: 15N120C3, 15N120C3, 15N120C3, 15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching

HGT1S15N120C3

Abstract: HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 15N120C
Contextual Info: 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching

15N120C3D

Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
Contextual Info: 15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance

15N120C3D

Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C
Contextual Info: 15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and

15N120C3

Abstract: HGT1S15N120C3 HGT1S15N120C3S HGTG15N120C3 HGTP15N120C3 RHRP15120 HGTG
Contextual Info: S E M I C O N D U C T O R 15N120C3, 15N120C3, 15N120C3, 15N120C3S 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, TC = 25oC The 15N120C3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching

Contextual Info: 15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The 15N120C3D is a MOS gated high voltage switch­ ing device combining the best features of MOSFETs and

15N120B2

Abstract: IXGP15N120B2 IXGA15N120B2
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching =1200 V = 30 A = 3.5 V = 137 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

247EH

Contextual Info: M S E A R R I S H M I C O N D U C T O R G T G 1 5 N 1 2 C 3 D 35A, 1200V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e M ay 1997 Features Description • 35A, 1 200V at T c = 2 5 ° C T h e H G T G 1 5 N 1 2 0 C 3 D is a M O S gated high vo lta g e s w itc h ­

15N120C3

Abstract: TP15N120 15n120
Contextual Info: HAFRRIS 15N120C3, 15N120C3, 15N120C3, 15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, 15N120C3, 15N120C3 and 15N120C3S are MOS gated high voltage switching