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IXTH68P20T Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH68P20T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 68A TO-247	Original	PDF		6

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IXYS Corporation IXTH68P20T MOSFET P-CH 200V 68A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH68P20T	Tube	1,170		1	1 $22.82 10 $22.82 100 $14.42 1000 $12.26 10000 $12.26	Buy Now
Mouser Electronics ()	IXTH68P20T		549			1 $21.87 10 $14.42 100 $14.42 1000 $14.22 10000 $14.22	Buy Now
	IXTH68P20T		545			1 $21.87 10 $14.42 100 $14.42 1000 $14.22 10000 $14.22	Buy Now
Future Electronics	IXTH68P20T	Tube	210		30	1 - 10 - 100 $16.61 1000 $16.36 10000 $16.36	Buy Now
TTI	IXTH68P20T	Tube			300	1 - 10 - 100 - 1000 $12.58 10000 $12.58	Buy Now
Littelfuse Inc IXTH68P20T MOSFET, P-CH, 200V, 68A, TO-247; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTH68P20T	Bulk	3		1	1 $20.88 10 $18.15 100 $15.42 1000 $14.29 10000 $14.29	Buy Now
RS	IXTH68P20T	Bulk		8 Weeks	30	1 - 10 - 100 $20.36 1000 $20.36 10000 $20.36	Get Quote

IXTH68P20T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT68P20T IXTH68P20T O-268 O-247 68P20T	PDF
Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT68P20T IXTH68P20T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT68P20T IXTH68P20T O-268 O-247 -100V 68P20T	PDF
Contextual Info: Preliminary Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT68P20T IXTH68P20T O-268 -100V 68P20T	PDF