IXTH68P20T Search Results
IXTH68P20T Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXTH68P20T | IXYS | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 68A TO-247 | Original | 6 |
IXTH68P20T Price and Stock
Littelfuse Inc IXTH68P20TMosfet, 200V, 68A, 150Deg C; |Littelfuse IXTH68P20T |
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IXTH68P20T | Bulk | 100 | 1 |
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| IXTH68P20T | Bulk | 3 | 1 |
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IXTH68P20T | Bulk | 8 Weeks | 30 |
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IXYS Corporation IXTH68P20TMOSFETs TrenchP Power MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTH68P20T | Tube | 300 |
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IXTH68P20T | Tube | 60 | 23 Weeks | 30 |
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IXTH68P20T Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Advance Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
ixtt68p20tixth68p20to-268o-247+1 | |
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Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT68P20T IXTH68P20T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
ixtt68p20tixth68p20to-268o-247+2 | |
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Contextual Info: Preliminary Technical Information IXTT68P20T IXTH68P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 68A Ω 55mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
ixtt68p20tixth68p20to-268-100v+1 |